1. Semiconductor Introduction ENGI 242 ELEC 222

2. January 2004ENGI 242/ELEC 2222 Specification Symbol Notation Standard Type of valueSymbolSubscript Instantaneous value of time varying valueLower case Instantaneous total valueLower CaseUpper case RMS or effective valueUpper CaseLower case Maximum or average value, dc valueUpper Case

3. January 2004ENGI 242/ELEC 2223 Factors effecting Resistivity

4. January 2004ENGI 242/ELEC 2224 Ge and Si single-crystal structure

5. January 2004ENGI 242/ELEC 2225 Atomic structure: (a) germanium; (b) silicon

6. January 2004ENGI 242/ELEC 2226 Energy levels: discrete levels in isolated atomic structures

7. January 2004ENGI 242/ELEC 2227 Conduction and valence bands of an insulator; semiconductor; and conductor.

8. January 2004ENGI 242/ELEC 2228 Antimony impurity in n-type material

9. January 2004ENGI 242/ELEC 2229 Effect of donor impurities on the energy band structure

10. January 2004ENGI 242/ELEC 22210 Boron impurity in p-type material.

11. January 2004ENGI 242/ELEC 22211 Electron versus hole flow.

12. January 2004ENGI 242/ELEC 22212 (a) n-type material; (b) p-type material.

13. January 2004ENGI 242/ELEC 22213 p-n junction with no external bias

14. January 2004ENGI 242/ELEC 22214 No-bias conditions for a semiconductor diode

15. January 2004ENGI 242/ELEC 22215 Forward-biased p-n junction

16. January 2004ENGI 242/ELEC 22216 Reverse-bias conditions for a semiconductor diode

17. January 2004ENGI 242/ELEC 22217 Reverse-biased p-n junction

18. January 2004ENGI 242/ELEC 22218 As the reverse bias voltage becomes greater, the charge stored in the depletion region increases.