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NOTES 27 March 2013 Chapter 10 MOSFETS CONTINUED.

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Presentation on theme: "NOTES 27 March 2013 Chapter 10 MOSFETS CONTINUED."— Presentation transcript:

1 NOTES 27 March 2013 Chapter 10 MOSFETS CONTINUED

2 MOS Structure Under Reverse Bias 2 - - - - - - - - - - - - + - Metal layer Oxide layer P-type + + + + + + + + + + + + + n-type inversion layer With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer Threshold voltage V T : applied gate voltage required to achieve the threshold inversion

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12 Voltage-Current Relationship of NMOS (1) 12

13 Voltage-Current Relationship of NMOS (2) 13 Saturation region Nonsaturation region In the nonsaturation region: In the saturation region: Operation characteristics: No current through the gate oxide I G =0 Current in the channel is due to drift rather than diffusion Application: voltage controlled current source, analog switch

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17 CMOS Technology 17 Complementary metal–oxide–semiconductor (CMOS)

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