1. ECE340 ELECTRONICS I MOSFET TRANSISTORS AND AMPLIFIERS

2. MOSFET METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR VOLTAGE - CONTROLLED DEVICE LOW POWER DISSIPATION

3. MOSFET SOURCEDRAIN OXIDE METAL OXIDE CHANNEL L

4. NMOSFET ENHANCEMENT MODE DEVICE N TYPE SOURCEN TYPE DRAIN OXIDE METAL OXIDE P TYPE SUBSTRATE +V G +V D -V S -V B DEPLETION LAYER

5. MOSFET “ON” CONDITION n+ OXIDE METAL OXIDE V G > V TN +V D p IDID electrons

6. MOSFET PARAMETERS i D – DRAIN CURRENT V TP,V TN – THRESHOLD VOLTAGE (V TH ) v DS – DRAIN TO SOURCE VOLTAGE v GS – GATE TO SOURCE VOLTAGE v B – BULK VOLTAGE

7. THRESHOLD VOLTAGE VOLTAGE REQUIRED TO CREATE AN INVERSION LAYER OF CHARGE UNDER THE GATE OXIDE POSITIVE FOR n-CHANNEL DEVICES NEGATIVE FOR p-CHANNEL DEVICES

8. BULK VOLTAGE LOWEST VOLTAGE AVAILABLE FOR NMOS (N- CHANNEL) DEVICES HIGHEST VOLTAGE AVAILABLE FOR PMOS (P- CHANNEL) DEVICES REVERSE-BIASES PN JUNCTIONS

9. MOSFET CAPACITANCE POSITIVE OR NEGATIVE VOLTAGE AT GATE TERMINAL INDUCES CHARGE ON GATE METAL CHARGE OF OPPOSITE TYPE ACCUMULATES IN CHANNEL FORMS MOSFET CAPACITOR

10. OXIDE CAPACITANCE

11. PARAMETER DEFINITIONS  n,p - ELECTRON OR HOLE MOBILITY  ox – PERMITTIVITY OF OXIDE t ox – OXIDE THICKNESS (W/L) – ASPECT RATIO

12. MOSFET OPERATION SOURCE TERMINAL IS GROUNDED GATE AND DRAIN VOLTAGES REFERENCED TO SOURCE VOLTAGE VOLTAGE IS APPLIED TO GATE TERMINAL TO INDUCE CHARGE IN THE CHANNEL

13. CHARGE FLOW CHARGE IS PULLED INTO CHANNEL FROM DRAIN AND SOURCE REGIONS CHARGE FLOWS FROM SOURCE TO DRAIN AS DRAIN VOLTAGE IS INCREASED

14. DEVELOPMENT OF MOSFET EQUATIONS

18. N-CHANNEL MOSFET EQUATIONS

19. MOSFET CHARACTERISTICS v DS 0V2V4V6V8V10V12V IDID 0mA 0.5mA 1.0mA 1.5mA v GS3 v GS2 v GS1

20. TRANSCONDUCTANCE PARAMETER COMPONENTS MOBILITY ELECTRIC PERMITTIVITY OXIDE THICKNESS ASPECT RATIO

21. TRANSCONDUCTANCE PARAMETER PHYSICS

22. n-CHANNEL MOSFET OPERATION IN CUTOFF REGION

23. n-CHANNEL MOSFET OPERATION IN LINEAR REGION

24. n-CHANNEL MOSFET OPERATION IN SATURATION REGION

25. p-CHANNEL MOSFET OPERATION IN CUTOFF REGION

26. p-CHANNEL MOSFET OPERATION IN LINEAR REGION

27. p-CHANNEL MOSFET OPERATION IN SATURATION REGION

28. NMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION

29. PMOS INCREMENTAL RESISTANCE IN THE LINEAR REGION

30. MODULATED CHANNEL IN SATURATION REGION n+ OXIDE METAL OXIDE V G > V TN +V D p IDID V D >>V G TAPERED CHANNEL

31. NMOS INCREMENTAL RESISTANCE IN SATURATION REGION

32. PMOS INCREMENTAL RESISTANCE IN SATURATION REGION

33. DEPENDENCE ON DRAIN VOLTAGE

34. PSPICE MOSFET SYMBOLS p-channel enhancement n-channel enhancement

35. NMOS LARGE SIGNAL MODEL V GS V DS + - S + G S rOrO - DG

36. DEVELOPMENT OF MOSFET SMALL- SIGNAL MODEL

37. TOTAL CURRENT AND VOLTAGE

38. COMPONENTS OF TOTAL CURRENT

39. MOSFET TRANSCONDUCTANCE

40. ALTERNATIVE TRANSCONDUCTANCE EQUATION

41. SMALL-SIGNAL MODEL g d s s rOrO VCC v ds + - + v gs - g m v gs idid