1. Energy Efficiency Lighting Sponsor: Presentation by: Jack Ko, CTS Deputy Director Renesola Ltd. Virtus® modules From Superior Ingot to Excellent Modules

2. Introduction of Virtus® Wafer manufacture Characteristics of Virtus® I module Characteristics of Virtus® II module Summary

3. Multi IngotMono IngotVirtus® Ingot Growth methodDSSCz methodControlled DSS Crystalline waySeedlessSeed Crystalline growth controlRandom nucleationSeedingControlled nucleation Ingot size450-800 Kg120 Kg450-800 Kg Grain OrientationRandomSinglePreferred Production costLowerHighLow

4. Lower LID (Light Induced Degradation), Lower power loss in higher temperature, Cost reduction (wafer and cell cost), Identical power output, Virtus® I moduleMono module

5. Mono WaferVirtus® I Wafer Growth methodsCz method -120KgModified DSS- 450-800 Kg Nucleation waySeed growth Crystalline growth controlSeedingControlled nucleation Cell efficiencyHigh Oxygen concentrationHighLOW LIDHighLOW Production costHighLOW  Mono-wafer has higher efficiency, oxygen concentration which cause high LID due to the high recombination of the B-O complex.  Virtus® wafer has high cell efficiency, low oxygen concentration, and low LID.

6. Temperature coefficient of power (%/ o C) Light induced degradation (%)  Lower oxygen concentration creates less B-O complex in Virtus wafer.  Lower temperature coefficient of power and light induced degradation.

7. Module level Mono module Virtus® I module Power range (W)245-260 Maximum power (W)260 Average power (W)255 Average efficiency15.7% Power loss (CTM loss)4.5%2.0% Temperature coefficient of power-0.43%/ o C-0.39%/ o C Light induced degradation (LID)-3%-2% Module costHighLow

8. Higher power output, Higher performance with the same cost, The same LID, The same CTM loss,

9. Multi WaferVirtus® II Wafer Crystalline waySeedlessSeed Crystalline growth controlRandom nucleationControlled nucleation Grain orientationRandomPreferred Grain uniformityRandomUniform Cost-performanceLowhigh

10. Conventional multi-ingot Virtus® II ingot 1.Conventional multi-ingot has disadvantage of poor grain distribution and low-lifetime. 2.Virtus® ingot improves the distribution of grain size and lifetime. 3.Virtus® ingot provides higher lifetime and lower dislocation density.

11. Multi –crystalline waferVirtus® A++ wafer

12. Multi-crystalline cellsVirtus® II cells Efficiency~17.0% Efficiency~17.6%

13. Module level Multi- modules Virtus® II modules Power range (W)235-245250-260 Maximum power (W)245260 Average power (W)240255 Average efficiency (%)14.815.7 Temperature coefficient of powerLow Light induced degradation (LID)Low Cost-performanceLowHigh

14. Major defects of conventional multi-crystalline wafers can be reduced by the innovative controlled DSS method Virtus® I module provides better temperature coefficient of power and lower light induced degradation compared to mono modules Virtus® II wafer increases cell efficiency due to higher lifetime, lower dislocation and uniform grain size. Virtus® II module shows better performance and the same production cost of multi module. Module types Wattage Range (60 pcs module) Production CostDefect ratioAppearance Mono245-260 WHigherlowerEven Virtus® I245-260 WMedium Uneven pattern Multi235-250 WLowerHigherEven Virtus® II250-260WLowestMediumEven

16. Advanced Power Warranty -Virtus I –plus & Virtus II –plus modules For Virtus series module series  To reduce LID, we add a new sorting criteria for customer to reduce LID issue.  Positive tolerance range from (0W to +5W) to (+5W to +10W) New Power Warranty standard  From 90% (10yr) and 80% (25yr) to 92% (10yr) and 82% (25yr)  +2% total output guarantee for 25 yrs.