1. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 1 Quality Design for Valued Engineer

2. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 2 PowerESIM Features

3. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 3 PowerESIM Features

4. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 4 PowerESIM Features

5. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 5 PowerESIM Features

6. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 6 SPICE vs PowerESIM PowerESIM asking forSPICE asking for K Np Ns Co Do M1 Vi Rp Rp_ac Rs Rs_ac Rm

7. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 7 PowerESIM is all about - Select and Decise

8. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 8 Result orientated – Loss analysis

9. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 9 Result orientated – Thermal analysis Measured Simulated

10. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 10 Result orientated – Waveform analysis Measured Simulated

11. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 11 Result orientated – Loop Stability & Transient Measured Simulated

12. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 12 Result orientated – Input Current Harmonic Measured Simulated

13. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 13 Result orientated – MTBF & Life Time Simulated Measured Will be reported at 1/Mar/2100

14. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 14 Result orientated – DVT report Simulated Measured

15. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 15 Build a Xformer Simulated Lk=2.982uH Measured Lk=2.787uH

16. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 16 Add your own component to all analytical tools

17. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 17 Consideration on MOSFET Gate drive Drain voltage Drain current t0t1t2t3t4 t0-t1 drain current catch up with load current t1-t2 drain voltage falling period t2-t3 MOSFET fully turn on t3-t4 drain voltage rising period with miller effect t4-t5 drain current falling period

18. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 18 Ns Voltage Diode voltage Diode current t1t2t3t4t5 t0-t1 diode in forward bias t1-t2 forward current drop to zero t2-t3 from zero current to peak reverse current (ta) t3-t4 reverse current droping period t4-t5 leakage current with reverse voltage t0 Consideration on Diode

19. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 19 R dc R skin R dc R proximity R core R fringe I pri I mag I se c R dc – wire dc losses R skin – wire skin effect losses R proximity – wire proximity effect losses R fringe – fringing flux losses R core – core losses Consideration of Magnetic

20. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 20 Freq. Loss Loss=1W@100kHz Loss=3W@200kHz BB Loss Loss=1W@0.1T Loss=5W@0.2T Core Loss Characteristics – frequency and flux Every Engineer know, but...

21. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 21 I dc_bias Loss D I dc_bias D Core Loss Characteristics – dc bias and duty cycle Data sheet Loss is I dc_bias =0 Large loss @ I dc_bias >Bs Somewhere in between must exist rising slope @  B Higher Freq. higher loss Higher flux change rate higher loss Smaller D means higher flux change rate

22. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 22 ESR Irms Temp. ESR ESR=1@25 o C ESR=3@-40 o C Freq. ESR ESR=1@100kHz ESR=2@100Hz Consideration on Capacitor

23. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 23 FmFm d(s) v e (s) RsRs - + - + C c (s) A c (s) Z p (s) V i (s) V o(s) i L (s) B c (s) + + + Consideration on Loop Analysis

24. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 24 By introducing a second order (two pole) transfer function with resonate frequency at half of the switching frequency and a damping factor  Consideration on Subharmonic Instability

25. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 25 FmFm d(s) v e (s) RsRs - + - + C c (s) A c (s) Z p (s) V i (s) V o(s) i L (s) B c (s) + + + F(s) More complicated graphical model

26. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 26 Automatic compensation After all, you only need a final compensated design

27. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 27 Consideration on MTBF p = b  A  r  s  c  Q  E  T... Where p is the part failure rate b is the base failure rate  is factors modify the base failure rate

28. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 28 MTBF result with a click

29. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 29 Consideration on Thermistor Consideration on PWM Consideration on Bridge : Consideration on Resistor More Consideration...

30. Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab Limited www.PowerESIM.com 30 Drop a business card to me to get one month free trail Don’t forget