1. Chapter 2 MOS Transistors

2. 2.2 STRUCTURE AND OPERATION OF THE MOS TRANSISTOR

3. 2.2 Structure and Operation of the MOS Transistor

6. 2.3 THRESHOLD VOLTAGE OF THE MOS TRANSISTOR

7. 2.3 Threshold Voltage of the MOS Transistor

8. Intrinsic carrier concentration : Mass action law : Difference between intrinsic and actual Fermi level : p-type material case : Gate oxide capacitance : 2.3 Threshold Voltage of the MOS Transistor (2.1) (2.2) (2.3a) (2.3b) (2.4) (2.5)

9. 2.3 Threshold Voltage of the MOS Transistor

12. 2.3 MOS Structure 2.3.4 The Depletion Approximation

13. 2.47 2.71 2.72 2.73 2.74 2.75 2.76 2.77 2.78 2.79 2.80 2.81 2.82 2.83

14. 2.3 MOS Structure 2.3.4 The Depletion Approximation

15. 2.84 2.85 2.86 2.87 2.88 2.89 2.90 2.3 MOS Structure 2.3.4 The Depletion Approximation

16. 2.91 2.92 2.93 2.94

17. Change of Quasi-Fermi Potentials across the Space- Charge Region 17

18. 18

19. Modern VLSI Devices 19

20. Modern VLSI Devices 20

21. 21

22. 22

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24. 24

25. 25

26. 26

27. 27

28. 28

29. 29

30. Silicon-gate device work function difference : Flat-band condition : Depletion layer(p-type) thickness : Bulk charge : (Inversion) (Body bias) 2.3 Threshold Voltage of the MOS Transistor (2.6) (2.7) (2.8) (2.9a) (2.9b)

31. Threshold voltage : Body-effect coefficient(body factor)Flat-band condition : 2.3 Threshold Voltage of the MOS Transistor (2.10) (2.11) (2.12)

32. 2.4 Effect of Gate-Body Voltage on Surface Condition 2.4.26

33. 2.3 Threshold Voltage of the MOS Transistor

34. 2.4 FIRST-ORDER CURRENT-VOLTAGE CHARACTERISTICS

35. 2.4 First-Order Current-Voltage Characteristics

36. Charge area density at the point y : Drain-source current : (Carrier velocity : ) 2.4 First-Order Current-Voltage Characteristics (2.13) (2.14) (2.15)

37. Process transconductance parameter : Drain-source current : (Device transconductance parameter : ) 2.4 First-Order Current-Voltage Characteristics (2.16) (2.17a) (2.17b)

38. 2.4 First-Order Current-Voltage Characteristics

39. Saturation voltage : Drain-source current (saturation) : (Shortening the electrically effective value of L) 2.4 First-Order Current-Voltage Characteristics (2.18) (2.19) (2.20)

40. 2.4 First-Order Current-Voltage Characteristics

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42. 2.5 DERIVATION OF VELOCITY- SATURATED CURRENT EQUATION

43. 2.5.1 Effect of High Fields

44. (2.21)

45. 2.5.1 Effect of High Fields

46. Critical field values : Carrier velocity : Consider boundary condition : (2.22) (2.23a) (2.23b) (2.24) 2.5.1 Effect of High Fields

47. Linear region operation 2.5.2 Current Equations for Velocity-Saturated Devices (2.25)

48. Saturation region operation Limiting cases : ( ) (2.26) (2.27) (2.28) (2.29) 2.5.2 Current Equations for Velocity-Saturated Devices

50. 5.2 Carrier Velocity Saturation 5.2.16 5.2.17

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52. 1X devices 2.5.2 Current Equations for Velocity-Saturated Devices

53. Equations for deep submicron devices Saturation region Channel length modulation Linear region 2.5.2 Current Equations for Velocity-Saturated Devices

54. 2.6 ALPHA-POWER LAW MODEL

55. 2.6 Alpha-Power Law Model

56. (2.30a) (2.30b) (2.31) 2.6 Alpha-Power Law Model

57. 2.7 SUBTHRESHOLD CONDUCTION

58. 2.7 Subthreshold Conduction

59. 2.5.1 Effect of High Fields

60. Current equation: Slope factor : 2.7 Subthreshold Conduction (2.32) (2.33)

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65. 2.8 CAPACITANCES OF THE MOS TRANSISTOR

66. 2.8 Capacitances of the MOS Transistor

67. 2.8.1 Thin-Oxide Capacitance Total capacitance of the thin-oxide : Examples : i) technology, oxide thickness ii) process, with (2.34)

68. 2.8.1 Thin-Oxide Capacitance

69. 7.3 A MEDIUM- FREQUENCY SMALL- SIGNAL MODEL FOR THE INTRINSIC PART

70. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.1 7.3.2

71. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.3 7.3.4 7.3.5

72. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

73. 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.1 Complete Description of Intrinsic Capacitance Effects 8.2.3 8.2.4 8.2.5 8.2.6 8.2.7 8.2.8

74. 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.1 Complete Description of Intrinsic Capacitance Effects 8.2.9 8.2.10 8.2.11 8.2.12

75. 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.2 Small-Signal Equivalent Circuit Topologies

76. 8.2.17 8.2.18 8.2.19a 8.2.19b 8.2.19c 8.2.20

77. 8.2 A Complete Quasi-Static Model for the Intrinsic Part 8.2.2 Small-Signal Equivalent Circuit Topologies

78. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.6

80. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.7 7.3.8 7.3.9 7.3.10

81. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.11 7.3.12 7.3.13 7.3.14 7.3.15 7.3.16 7.3.17 7.3.18

82. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part 7.3.19 7.3.20

83. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part Nonsaturation with V DS = 0 (  =1) Saturation (  =0) 7.3.21 7.3.22 7.3.23, 24 7.3.25 7.3.26 7.3.27 7.3.28 7.3.29

84. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

85. Click Intrinsic+Extrinsic (7.4)

86. 2.8.1 Thin-Oxide Capacitance

87. Current-voltage characteristic : Built-in junction potential : 2.8.2 pn Junction Capacitance (2.35) (2.36) (2.37)

88. 2.8.2 pn Junction Capacitance

89. Junction capacitance : Zero-bias junction capacitance : For of the NMOS device : 2.8.2 pn Junction Capacitance (2.38) (2.39) (2.40)

90. 2.8.2 pn Junction Capacitance

91. Total junction capacitance : Simplification : (, ) 2.8.2 pn Junction Capacitance (2.41) (2.42)

92. Equivalent voltage-independent capacitance 2.8.2 pn Junction Capacitance

93. (2.43) (2.44) (2.45)

94. 2.8.3 Overlap Capacitance

95. (2.46) (2.47) 2.8.3 Overlap Capacitance

96. 2.9 SUMMARY

97. 2.9 Summary