1. Designing for Uncertainty: Critical Issues for New Nanoelectronic Technologies Evelyn L. Hu California NanoSystems Institute UCSB UNCERTAINTIES Technologies for post-CMOS? Architectures for new technologies –Too early to extract device parameters? Plan large-scale systems? – Uncertainties in device variability, failure modes Where are the sources of errors in system operation, in fabrication? IC-DFN Workshop Hangzhou, August 15, 2006 A Few Candidate TechnologiesSeeds of an architecture with defect tolerance Beginnings….

2. Are We Finally at the Limits? www.intel.com

3. Challenges to Further Scaling (CMOS) Fundamental Physical Limits? –Leakage through dielectric –Small current drive, electron statistics –Thermal noise –Interconnect delay High densities -> severe power dissipation Complexities in design & verification Economic Limits: the cost of reliable fabrication Intel 45 nm Shuttle Test Chip

4. The Next Technology Generation Continued faster, better (functional), cheaper Performance –Faster access time –Low power –Operates over wide temperatures –Non-volatile Manufacturability –Robust process latitude –Low-cost fabrication –Scalability CHOICES? Benchmarks?

5. Selecting a post-CMOS Technology: choices Limitations of present (scaled) technology –Cross talk –Leakage –Charge modulation: statistical limitations of dopants –Maintaining high noise margins at reasonable temperatures Desired scalability –Scale down in size: fabrication at the nanoscale –Scale up in complexity Increased alignment accuracy Issues of interconnect delay

6. Address limitations –Leakage –Cross talk –Charge modulation: statistical limitations of dopants –Maintaining high noise margins at reasonable temperatures Desired scalability –Scale down in size: fabrication at the nanoscale –Scale up in complexity Increased alignment accuracy Issues of interconnect delay Selecting a post-CMOS Technology: Choices Spintronics: alternative ‘state variables’ Molecular Electronics Carbon Nanotube transistors Simplify manufacturability No one technology addresses ALL the challenges, or provide ALL the desirable features for the next-generation technology Single Electron Transistors Quantum Cellular Automata

7. Limiting Leakage: Single Electron Transistors E C = Q 2 /2C; Q = charge, C = capacitance E Th ~ kT; E C >> kT electron For a small enough ‘island’ and very small capacitance, C, and for E c >> E th, THERE IS AN ENERGY COST TO ADDING OR REMOVING CHARGE FROM THE ISLAND (no leakage)

8. Limiting Leakage: Single Electron Transistors electron For a small enough ‘island’ and very small capacitance, C, and for E c >> E th, THERE IS AN ENERGY COST TO ADDING OR REMOVING CHARGE FROM THE ISLAND (no leakage) E a = single-electron addition energy Room temperature (25 meV) operation only possible for island diameter ~ few nanometers Likharev, Electronics Below 10 nm

9. QCA Cell: Quantum dots with excess charge ‘0’‘1’ Charge distribution from electrostatic repulsion Addition of charge -> changed charge distribution, cellular ‘state’; Truth Table Amlani et al., Science 284, 280 [1999] (Notre Dame) Majority Gate Device Nearest-neighbor interaction, local computation Taking Advantage of Crosstalk: Quantum Cellular Automata Fabrication & scale-up challenging, room temperature operation unlikely

10. Operation at Room Temperature: Magnetic Cellular Automata Cowburn & Welland, Science 287, 1466 [2000]  Larger magnetic quantum dots (110 nm diameter),  Material: Ni 80 Fe 14 Mo 3 X  Propagation of information through exchange interaction between dots  Elongated dot, injector Applied magnetic field Input dot = ‘0’ Input dot = ‘1’

11. Using Spin to Transfer Information GaMnAs Digital Alloys Nanoscale-engineered materials Ferromagnetic spin filter Semiconductor Detector (Quantum well) Spin-based Devices New device concepts Spintronic Technology Powerful new information technologies David Awschalom, Art Gossard UCSB  Experiments have shown long spin coherence lifetimes, but…  Need to understand best material systems and device configurations  Mechanism of control: Magnetic (e.g. MCA) or electronic?

12. Address limitations –Leakage –Cross talk –Charge modulation: statistical limitations of dopants –Maintaining high noise margins at reasonable temperatures Desired scalability –Scale down in size: fabrication at the nanoscale –Scale up in complexity Increased alignment accuracy Issues of interconnect delay Selecting a post-CMOS Technology: Choices Spintronics: alternative ‘state variables’ Single Electron Transistors Quantum Cellular Automata  Challenges in device fabrication profound  Limited architectures for large scale systems

13. Incorporating natural nanoscale building blocks: Carbon Nanotubes  Beautiful structural order in carbon nanotubes  Exceptional electrical properties  A single carbon nanotube can be made into a transistor  Can dope single carbon nanotube both n-type and p-type  Enhanced compactness, multi- functionality or a ring oscillator Chen et al., Science 311, 1735 [2006] Challenges: control of conductivity, doping, assembly

14. wire With very dense nanowires (20 nm) in cross-bar geometry Stoddart & Heath, UCLA Apply electric signal HP has taken these concepts to larger-scale arrays, considered architectures and defect tolerances Incorporating natural nanoscale building blocks: molecular switches

15. Developing the Molecular Crossbar Platform Cross-bar configuration, with molecular interlayer Wu et al., Applied Physics A 80, 1173 [2005] 34 x 34 cross-bar memory, 30 nm half-pitch, Ti/Pt wires  I-V of single device: HYSTERETIC SWITCHING  On= 1.5 positive bias, top electrode; Off = negative bias  ON/OFF ~ 10 HP has used this architecture for memory (a) and logic (b) (a) Chen et al., Nanotechnology14, 462 [2003]; (b) G. Snider, Applied Phys.A 80, 1165 [2005]

16. Sample of ‘defect-tolerant’ nano-architecture Lay out demultiplexer circuit on crossbar geometry Demux circuit (not defect-tolerant) Defect ‘stuck open’ address signal Defect-tolerant circuit 2-bit address passes through CMOS encoder -> 3 bit encoded address 6-bit signal vector u -> redundant input address Kuekes et al, Appl. Phys.A 80, 1161 [2005]

17. Sample of ‘defect-tolerant’ nano-architecture Calculated percentage of usable nanowires, versus defect probability for different levels of redundancy, d (address bit)

18. Summary and Beginnings  Technologies for post-CMOS?  A wide variety of candidates, at different levels of maturity  No one technology addresses ALL the challenges, or provide ALL the desirable features for the next-generation technology  Architectures for new technologies  Initial work on cross-bar geometry with molecular switches  Simple architectures, error-tolerant schemes provide important benchmarks  Consideration of appropriate architectures CRITICAL (even in the face of uncertainty) to help sort and direct progress of technology

19. Address limitations –Leakage –Cross talk –Charge modulation: statistical limitations of dopants –Maintaining high noise margins at reasonable temperatures Desired scalability –Scale down in size: fabrication at the nanoscale –Scale up in complexity Increased alignment accuracy Issues of interconnect delay Selecting a post-CMOS Technology: Choices Spintronics: alternative ‘state variables’ Molecular Electronics Carbon Nanotube transistors Simplify manufacturability Single Electron Transistors Quantum Cellular Automata New Opportunities in Resilient, Manufacturable Information Systems? The Emergent Integrated Circuit of the Cell Hanahan & Weinberg, Cell [2000]