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Sanjay Mehrotra. Charles Lee, INTEL Specs in 2006 SFF HDDNANDNOR Capacity4GB to 10GB8.0 Gbit1 Gbit Data Rate 5-10 MB/sec* Write: 5-10 MB/s Read: <40MB/s.

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Presentation on theme: "Sanjay Mehrotra. Charles Lee, INTEL Specs in 2006 SFF HDDNANDNOR Capacity4GB to 10GB8.0 Gbit1 Gbit Data Rate 5-10 MB/sec* Write: 5-10 MB/s Read: <40MB/s."— Presentation transcript:

1 Sanjay Mehrotra

2 Charles Lee, INTEL Specs in 2006 SFF HDDNANDNOR Capacity4GB to 10GB8.0 Gbit1 Gbit Data Rate 5-10 MB/sec* Write: 5-10 MB/s Read: <40MB/s Write 1 MB/s Read 200MB/s Latency8ms200us85ns “Spinup”1 to 2 s~0s Power Active 660mW** Standby 33mW** Active 36 mW Standby 0.2mW Active 90mW Standby 0.2mW Temp0 to 70 C-20 to 65 C-25 to 85 C Size 6cm 3 volume 5mm height 1.2x14x14mm High latency, high active power means SFF HDD is best for storing media Low latency, high BW make NOR Flash a good choice for storing code or data SFF HDD can be a good choice for storing large audio and video data in mobile phones, but is not a good choice for storing O/S code, drivers, or applications *Sustained data rate **Active includes idle periods; does not include DRAM contribution Charles Lee, INTEL

3 0.1 10 Cell Size (  m 2 ) 1 0.01 ‘93 16M 32M 64M 256M 512M 1G 2G 4G 8G 1G 4G 2G Floating Gate LOCOS Tunnel Oxide Control Gate WSi ONO Floating Gate LOCOS Control Gate STI Floating Gate Control Gate ONO Floating Gate Tunnel Oxide STI WSi STI Floating Gate Control Gate STI Floating Gate Control Gate Tunnel Oxide LOCOS - 0.35m LOCOS - 0.35  m 0.25m-0.13m SA-STI 0.25  m-0.13  m New Structure 90nm ~ MLC Multi Level Cell 0.13  m 90nm 70nm 0.16  m0.25  m Fine Lithography ‘94 ‘95 ‘96 ‘97 ‘98 ‘99 ‘00 ‘01 ‘02 ‘03 ‘04 ‘05 ‘06 ‘07 Douglas Wong, Toshiba


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