1. 001-93526Owner: SKRG Rev *F Tech lead: EWOO 1Mb Quad SPI nvSRAM New Product Introduction New Product Introduction: 1Mb Quad SPI nvSRAM Eliminate Batteries and Reduce Pin Count While Maintaining High-Speed Nonvolatile RAM Performance

2. 001-93526Owner: SKRG Rev *F Tech lead: EWOO The Global TAM 1 forecast for Nonvolatile RAM (NVRAM) is $590M in 2014 2 with a 10% CAGR through 2018 Cypress’s 1Mb Quad SPI 3 nvSRAM applications include: Computing and networking Industrial automation RAID storage These applications use high-performance systems that require instant, high-reliability data capture on power loss These systems need the data throughput performance of high-speed parallel NVRAMs and the reduced pin count of Quad SPI interfaces preferred by designers Customers that buy these systems prefer battery-free NVRAM solutions Current NVRAM solutions, such as Battery-Backed SRAM, cannot meet all of these requirements Take advantage of the industry shift from parallel Battery-Backed SRAM to Quad SPI NVRAM Demand for Reliability and Performance Is Driving Nonvolatile RAM Growth 3a 1Mb Quad SPI nvSRAM New Product Introduction 1 Total Available Market 2 Web-Feet Research, Cypress Semiconductor research 3 Quad Serial Peripheral Interface

3. 001-93526Owner: SKRG Rev *F Tech lead: EWOO Cypress: No. 1 in NOR Flash, SRAM, NVRAM Comparison to Competitors’ Memory Product Portfolios Cypress has the broadest portfolio of high-performance memories for embedded systems Product CategoryCypressCompetitorsPerformance Advantage Metrics ISSIMicronToshibaWinbondMacronixFujitsu No. 1 NOR Flash Parallel NOR Flash Highest Read Bandwidth Fastest Program/Erase 102 MBps Serial NOR Flash Highest Read Bandwidth Fastest Program/Erase 160 MBps HyperFlash™ 1 Highest Read Bandwidth333 MBps No. 1 SRAM QDR ® -IV Synchronous SRAM Highest RTR (random transaction rate) 2.1 GT/s Asynchronous SRAM with ECC 2 Highest reliability<0.1 FIT 3 MicroPower SRAM Lowest standby current1.5 µA No. 1 NVRAM Serial F-RAM™ 4 Lowest standby current100 µA Parallel nvSRAM 5 Fastest NVRAM 6 20 ns AGIGARAM ® 7 Highest-density NVRAM 6 16GB 1 A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR Flash Memory with one-third the number of pins of parallel NOR Flash Memory 2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM 5 Nonvolatile SRAM 6 Nonvolatile memory that provides direct access to read and write to any memory location in any random order 7 A Cypress brand name 3b

4. 001-93526Owner: SKRG Rev *F Tech lead: EWOO Terms You Will Hear Today Nonvolatile Memory (NVM) Memory that retains data on power loss Nonvolatile Random-Access Memory (NVRAM) An NVM that allows direct access to stored data in any random order Write Endurance The number of times an NVM cell can be rewritten before it wears out Silicon Oxide Nitride Oxide Silicon (SONOS) A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell Nonvolatile Static Random-Access Memory (nvSRAM) Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss Quad Serial Peripheral Interface (Quad SPI) A high-speed interface that combines four individual SPI channels to increase serial bus throughput Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data Battery-Backed SRAM (BBSRAM) SRAM memory connected to a battery to retain data on power loss Restriction of Hazardous Substances (RoHS) A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components Redundant Array of Independent Disks (RAID) A storage technology that uses two or more disk drives for redundancy 4 1Mb Quad SPI nvSRAM New Product Introduction

5. 001-93526Owner: SKRG Rev *F Tech lead: EWOO High-Speed NVM Design Problems 1. Many systems require fast NVMs with high Write Endurance Traditional EEPROM and flash NVMs have slow write times (>1 ms) and limited Write Endurance Low-power asynchronous SRAMs have fast access times but require battery backup to store data on power loss Most NVRAMs do not offer a 16-pin serial interface with enough performance to match a 44-pin high-speed parallel interface 2. BBSRAM solutions force undesirable tradeoffs Batteries consume board space and require a power-management controller, increasing system cost and complexity Coin-cell batteries have a three-year lifetime, which adds cost by requiring system maintenance and downtime After a power outage, data is lost if the battery is drained before power is restored, so repairs must be made quickly Batteries contain heavy metals that violate RoHS regulations 3. Many systems require accurate time-stamping Accurate external real-time clock chips, used to time-stamp data, add cost and complexity Cypress’s 1Mb Quad SPI nvSRAM solves all these problems Provides ≥24MBps random read/write access time with unlimited Write Endurance Offers a 16-pin Quad SPI interface with a 108-MHz clock rate, exceeding the throughput of a 44-pin x16, 40-ns parallel interface Stores data reliably on power loss without batteries, even in magnetic fields Eliminates the need for an external power-management controller Offers an integrated, high-accuracy, real-time clock option 5 Cypress’s 1Mb Quad SPI nvSRAM simplifies your design by eliminating batteries and reducing pin count 1Mb Quad SPI nvSRAM New Product Introduction

6. 001-93526Owner: SKRG Rev *F Tech lead: EWOO Quad SPI nvSRAM Is a Better Solution Quad SPI nvSRAM solution with integrated RTC By choosing a Quad SPI nvSRAM as your NVM solution… To produce a high-speed, high- reliability serial NVRAM solution for a mission-critical application. 6 Computing and Networking Industrial Automation RAID Storage Battery required to store data on power loss Extra board space for battery Low-power asynchronous SRAM Simplify a complex BBSRAM-based design… 1Mb Quad SPI nvSRAM New Product Introduction

7. 001-93526Owner: SKRG Rev *F Tech lead: EWOO 1 Magnetoresistive Random Access Memory that uses magnetic elements to store data 2 Fully random read or write in 4-byte burst 3 Full 1Mb memory burst write or read 4 Pins required to connect to an MCU 5 No direct comparison due to interface differences; this SRAM part consumes 8 mA at 22 MHz 6 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids Feature Quad SPI nvSRAM CY14x101xS Micropower SRAM + Battery IS62WV1288DBLL Quad SPI MRAM 1 MR10Q010 Max Clock Rate 108 MHzNA104 MHz Random Data Throughput 2 24 MBps22 MBps23 MBps Burst Data Throughput 3 54 MBps22 MBps52 MBps Package Pins 163216 Controller Pins 4 6296 Active Write Current 38 mA at 108 MHzNA 5 220 mA at 104 MHz Sleep Current 10 µA10 µA (standby)100 µA Magnetic Field Immunity Yes No 6 Real-Time Clock Option YesNo Cypress 1Mb Quad SPI NVRAM Solution vs. Competition’s 7 1Mb Quad SPI nvSRAM New Product Introduction

8. 001-93526Owner: SKRG Rev *F Tech lead: EWOO nvSRAM Portfolio High Density | High Speed 64Kb - 256Kb 512Kb - 16Mb 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind 1 RTC 2 CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI 3 1.0 x8, x16; Ind 1 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind 1 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind 1 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B064I 64Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B256I 256Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B512I 512Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B101I 1Mb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil 4 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 ; RTC 2 Higher Densities QSPI 5 nvSRAM NDA Required Contact Sales Higher Densities DDRx 6 nvSRAM NDA Required Contact Sales ProductionDevelopment QQYY Availability Sampling Concept Status NEW 7 Extended Industrial grade −40ºC to +105ºC 10

9. 001-93526Owner: SKRG Rev *F Tech lead: EWOO 1Mb Quad SPI nvSRAM Computing and networking Industrial automation RAID storage Applications Quad SPI interface: 108 MHz Unlimited Write Endurance One million store cycles on power fail Data retention of 20 years at 85°C Operating voltages: 3.0 V, 1.8-V I/O Low standby (280-µA) and sleep (10-µA) currents Industrial temperature range: -40°C to +85°C Extended Industrial temperature range: -40°C to +105°C Integrated, high-accuracy real-time clock (RTC) Package: 16-SOIC, 24-BGA Features Preliminary Datasheet:Contact SalesContact Sales Collateral Block Diagram Sampling: Q3 2015 Production:Q4 2015 Availability Power Control VCAP 2 Store/Recall Control HSB 3 Recall Store I/O Control Software Command Detect QSPI I/Os 1Mb Quad SPI nvSRAM 3 Hardware store busy 4 RTC XIN 1 XOUT 1 1 Crystal connections 2 External capacitor connection VRTC SONOS Array SRAM Array Control Logic 2 Control 1Mb Quad SPI nvSRAM New Product Introduction 11

10. 001-93526Owner: SKRG Rev *F Tech lead: EWOO Here’s How to Get Started 1. Download our App Notes: Cypress Nonvolatile Products App NotesCypress Nonvolatile Products App Notes 2. Register to access online technical supportRegister 3. Request an advance datasheet: Contact SalesContact Sales 12 RAID Card by LSI Logic Router by Cisco Programmable Logic Controller by Keyence 1Mb Quad SPI nvSRAM New Product Introduction

11. 001-93526Owner: SKRG Rev *F Tech lead: EWOO APPENDIX 15 1Mb Quad SPI nvSRAM New Product Introduction

12. 001-93526Owner: SKRG Rev *F Tech lead: EWOO nvSRAM Product Selector Guide CY 14 V 101 QS – SF 108 X I 1Mb QPSI nvSRAM Part Numbering Decoder Temperature Range: I = Industrial, Q = Ext. Industrial Package: SF = 16-SOIC Standard; SE = 16-SOIC Custom; BK = 24-BGA Interface: QS = Quad SPI; PS = Quad SPI with RTC Density: 101 = 1Mb nvSRAM Marketing Code: 14 = nvSRAM Company ID: CY = Cypress Voltage: V = 3.0 V, 1.8 V I/O Frequency: 108 = 108 MHz Pb Content: X = Pb-free 16 1Mb Quad SPI nvSRAM Part NumberInterfaceClk Freq Supply Voltage I/O VoltageGradeTempPackageRTC CY14V101QS-SF108XIQuad SPI108-MHz3.0 V1.8 VIndustrial-40 to 85°C16-SOICNo CY14V101QS-SF108XQQuad SPI108-MHz3.0 V1.8 VExt. Industrial-40 to 105°C16-SOICNo CY14V101PS-SF108XIQuad SPI108-MHz3.0 V1.8 VIndustrial-40 to 85°C16-SOICYes CY14V101QS-SE108XIQuad SPI108-MHz3.0 V1.8 VIndustrial-40 to 85°C16-SOICNo CY14V101QS-SE108XQQuad SPI108-MHz3.0 V1.8 VExt. Industrial-40 to 105°C16-SOICNo CY14V101QS-BK108XIQuad SPI108-MHz3.0 V1.8 VIndustrial-40 to 85°C24-BGANo CY14V101QS-BK108XQQuad SPI108-MHz3.0 V1.8 VExt. Industrial-40 to 105°C24-BGANo 1Mb Quad SPI nvSRAM New Product Introduction

13. 001-93526Owner: SKRG Rev *F Tech lead: EWOO References and Links Video: nvSRAM Basics VideonvSRAM Basics Video nvSRAM datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM, 16Mb nvSRAM (Preliminary)1Mb nvSRAM4Mb nvSRAM8Mb nvSRAM16Mb nvSRAM (Preliminary) nvSRAM w/ONFI datasheet: 16Mb nvSRAM (Preliminary)16Mb nvSRAM (Preliminary) nvSRAM w/Real-Time Clock datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM, 16Mb nvSRAM (Preliminary)1Mb nvSRAM4Mb nvSRAM8Mb nvSRAM 16Mb nvSRAM (Preliminary) App Note: Comparison Between nvSRAM and BBSRAMsComparison Between nvSRAM and BBSRAMs App Note: Replacing 4Mbit (256K x16) MRAM with Cypress nvSRAMReplacing 4Mbit (256K x16) MRAM with Cypress nvSRAM App Note: nvSRAM with RTC Design GuidelinesnvSRAM with RTC Design Guidelines Website: Cypress Parallel nvSRAMsCypress Parallel nvSRAMs nvSRAM Product Selector Guide: nvSRAM Product Selector GuidenvSRAM Product Selector Guide Product roadmap: Cypress Nonvolatile RAMCypress Nonvolatile RAM 18 1Mb Quad SPI nvSRAM New Product Introduction

14. 001-93526Owner: SKRG Rev *F Tech lead: EWOO 1Mb QSPI nvSRAM Solution Value Competitor 1Mb low-power SRAM: ISSI IS62WV1288DBLL Price: $1.64 1 BOM Integration Battery + casing: Panasonic CR2477 battery + Memory Protection Devices Inc. BH1000G-ND casing Price: $2.12 1 Power management controller: Maxim MXD1210ESA Price: $4.01 2 Additional Value 22-µF external capacitor: Panasonic ECS-F0JE2262B Price: -$0.22 1 Field battery replacement cost Price: $9.09 3 Board space saving Value Added: $0.12 4 $1.64 $2.12 $4.01 $6.13 -$0.22 $9.09 $0.12 $8.99 $16.76 Competitor Battery + Casing Power Management Controller BOM Integration Value 22-µF External Capacitor Field Battery Replacement Cost Board Space Saving Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 52% Total Savings: CY14V101QS-SF108XI $7.98 5 $8.78 1 Digikey website 1ku pricing on 08/07/2014 2 Mouser website 1ku pricing on 08/07/2014 3 $4.92 (four times in 15 years at $1.23 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time conservatively estimated at 75 seconds/battery) 4 12.25 square centimeters at $0.01 per square centimeter 5 1ku web pricing on Cypress.com 19 1Mb Quad SPI nvSRAM New Product Introduction