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Explorations in quantum transport – phenomena and methods Sokrates T. Pantelides Department of Physics and astronomy, Vanderbilt University, Nashville, TN and Oak Ridge National Laboratory, Oak Ridge, TN Collaborators: Yoshihiro Gohda Zhong-yi Lu Kalman Varga Supported in part by Department of Energy
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MOORE’S LAW
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Phenomena (using the Lippmann-Schwinger method) Charging of molecules during transport (Gohda) Transport through ultra-thin films (Lu) New method (Varga)
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The Lippmann-Schwinger method Norton Lang, 1981 – t r Di Ventra, Lang, and Pantelides, 2000-2002
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Experiment : Reed et al (2000) T=190 K T=300 K 90° 0° 90° Theory
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Nature 417, 72 (2002) “The current is strongly suppressed up to a threshold V, then it increases in steps”
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Coulomb blockade in a quantum dot GaAs-AlGaAs-InGaAs-AlGaAs-GaAs
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Barner and Ruggiero, 1987
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LUMO V=2.4V
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V=1.2[V]V=3.6[V]
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LUMO AFTER SELF-CONSISTENCY, MOLECULE IS NEUTRAL! ELECTRODES ARE NEUTRAL! EXCITED STATE?
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C6H5SC6H5S ELIMINATE CONTACT ON LEFT C 6 H 4 (NO 2 )S
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-6 -4 -2 0 2 Energy (eV) C 6 H 5 -SC 6 H 4 (NO 2 )-S Energy (eV) -3 -2 -1 0 1
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0.6V 0 e 1.8V 1 e 4.2V 1 e
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V sd = 0.1 V Using a gate voltage Q=0 0.3 0.8 1.2
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Fowler-Nordheim tunneling J E J/E 2 = Aexp(-B/E) MOS n-Si Metal SiO 2 EFEF EcEc EvEv
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I V ln(J/E 2 ) 1/E Ohmic Fowler-Nordheim J/E 2 = Aexp(-B/E) I=V/R
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8-layer Si(001) Ohmic
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Effective potential EFEF J The dash-dot lines are boundary EFEF 8 layers Si(001) V=5.0v V=1.0v V=0.1v
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Current vs thickness [Si(001)] Bias=1.0V
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I-V curve through SiO 2 nano-film Three regions: (1)0.0 to 0.5V quasi-linear; (2)0.5 to 4.0V non-linear; (3)Over 4.0V quasi-linear
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Fowler-Nordheim I-V plot
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Effective potential J The dash-dot lines are boundary EFEF SiO 2 V= 4.0v nano-film V=0.5v
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1.2 n m (SiO 2 ) 1.5 n m (SiO 2 ) 0.9 n m (vacuum) 1.2 n m (vacuum) 1.5 n m (vacuum ) 012345 G. Timp et al (Bell Lab) 1998 calculation
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The Lippmann-Schwinger method t r EVERYWHERE
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DENSITY FUNCTIONAL THEORY FOR STEADY-STATE TRANSPORT (CURRENT-DENSITY FUNCTIONAL) Static external potential + B.C.
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MAP TRANSPORT ONTO AN EIGENVALUE PROBLEM Schrödinger equation with imaginary potential: Source Sink Battery!
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Na wire Real-space DFT calculation Jellium electrodes Bias Voltage
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Experiment (Reed et al.) Benzene ring -- IV characteristics
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