1. Bipolar Junction
Transistors (BJTs) 1

2. The base is a narrow region
Figure 5.1 A simplified structure of the npn transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

3. Same here Figure 5.2 A simplified structure of the pnp transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

4. sedr42021_0503.jpg
Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. (Reverse current components due to drift of thermally generated minority carriers are not shown.)
Microelectronic Circuits - Fifth Edition Sedra/Smith

5. sedr42021_0504.jpg
Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor operating in the active mode: vBE > 0 and vCB ³ 0.
Microelectronic Circuits - Fifth Edition Sedra/Smith

6. sedr42021_0505a.jpg
Figure 5.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
Microelectronic Circuits - Fifth Edition Sedra/Smith

7. The real physical configuration
Created by a sequence of diffusion steps
Figure 5.6 Cross-section of an npn BJT.
Microelectronic Circuits - Fifth Edition Sedra/Smith

8. sedr42021_0507.jpg
Figure 5.7 Model for the npn transistor when operated in the reverse active mode (i.e., with the CBJ forward biased and the EBJ reverse biased).
Microelectronic Circuits - Fifth Edition Sedra/Smith

9. sedr42021_0508.jpg
Figure 5.8 The Ebers-Moll (EM) model of the npn transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

10. sedr42021_0509.jpg
Figure The iC –vCB characteristic of an npn transistor fed with a constant emitter current IE. The transistor enters the saturation mode of operation for vCB < –0.4 V, and the collector current diminishes.
Microelectronic Circuits - Fifth Edition Sedra/Smith

11. sedr42021_0510.jpg
Figure Concentration profile of the minority carriers (electrons) in the base of an npn transistor operating in the saturation mode.
Microelectronic Circuits - Fifth Edition Sedra/Smith

12. sedr42021_0511.jpg
Figure Current flow in a pnp transistor biased to operate in the active mode.
Microelectronic Circuits - Fifth Edition Sedra/Smith

13. sedr42021_0512.jpg
Figure Large-signal model for the pnp transistor operating in the active mode.
Microelectronic Circuits - Fifth Edition Sedra/Smith

14. The arrow is in the direction of current flow
Figure Circuit symbols for BJTs.
Microelectronic Circuits - Fifth Edition Sedra/Smith

15. sedr42021_0514a.jpg
Figure Voltage polarities and current flow in transistors biased in the active mode.
Microelectronic Circuits - Fifth Edition Sedra/Smith

16. sedr42021_0515a.jpg Figure 5.15 Circuit for Example 5.1.
Microelectronic Circuits - Fifth Edition Sedra/Smith

17. sedr42021_e0510.jpg
Figure E5.10
Microelectronic Circuits - Fifth Edition Sedra/Smith

18. sedr42021_e0511.jpg
Figure E5.11
Microelectronic Circuits - Fifth Edition Sedra/Smith

19. sedr42021_0516.jpg
Figure The iC –vBE characteristic for an npn transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

20. sedr42021_0517.jpg
Figure Effect of temperature on the iC–vBE characteristic. At a constant emitter current (broken line), vBE changes by –2 mV/°C.
Microelectronic Circuits - Fifth Edition Sedra/Smith

21. This is a current controlled current source in the active region
Figure The iC–vCB characteristics of an npn transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

22. sedr42021_0519.jpg
Figure (a) Conceptual circuit for measuring the iC –vCE characteristics of the BJT. (b) The iC –vCE characteristics of a practical BJT.
Microelectronic Circuits - Fifth Edition Sedra/Smith

23. sedr42021_0520a.jpg
Figure Large-signal equivalent-circuit models of an npn BJT operating in the active mode in the common-emitter configuration.
Microelectronic Circuits - Fifth Edition Sedra/Smith

24. sedr42021_0521.jpg
Figure Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some detail.
Microelectronic Circuits - Fifth Edition Sedra/Smith

25. sedr42021_0522.jpg
Figure Typical dependence of b on IC and on temperature in a modern integrated-circuit npn silicon transistor intended for operation around 1 mA.
Microelectronic Circuits - Fifth Edition Sedra/Smith

26. sedr42021_0523.jpg
Figure An expanded view of the common-emitter characteristics in the saturation region.
Microelectronic Circuits - Fifth Edition Sedra/Smith

27. sedr42021_0524a.jpg
Figure (a) An npn transistor operated in saturation mode with a constant base current IB. (b) The iC–vCE characteristic curve corresponding to iB = IB. The curve can be approximated by a straight line of slope 1/RCEsat. (c) Equivalent-circuit representation of the saturated transistor. (d) A simplified equivalent-circuit model of the saturated transistor.
Microelectronic Circuits - Fifth Edition Sedra/Smith

28. sedr42021_0525.jpg
Figure Plot of the normalized iC versus vCE for an npn transistor with bF = 100 and aR = 0.1. This is a plot of Eq. (5.47), which is derived using the Ebers-Moll model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

29. sedr42021_e0518.jpg
Figure E5.18
Microelectronic Circuits - Fifth Edition Sedra/Smith

30. sedr42021_tb0503a.jpg
Table 5.3
Microelectronic Circuits - Fifth Edition Sedra/Smith

31. sedr42021_tb0503h.jpg Table 5.3 (Continued)
Microelectronic Circuits - Fifth Edition Sedra/Smith

32. sedr42021_0526a.jpg
Figure (a) Basic common-emitter amplifier circuit. (b) Transfer characteristic of the circuit in (a). The amplifier is biased at a point Q, and a small voltage signal vi is superimposed on the dc bias voltage VBE. The resulting output signal vo appears superimposed on the dc collector voltage VCE. The amplitude of vo is larger than that of vi by the voltage gain Av.
Microelectronic Circuits - Fifth Edition Sedra/Smith

33. sedr42021_0527.jpg
Figure Circuit whose operation is to be analyzed graphically.
Microelectronic Circuits - Fifth Edition Sedra/Smith

34. sedr42021_0528.jpg
Figure Graphical construction for the determination of the dc base current in the circuit of Fig
Microelectronic Circuits - Fifth Edition Sedra/Smith

35. sedr42021_0529.jpg
Figure Graphical construction for determining the dc collector current IC and the collector-to-emitter voltage VCE in the circuit of Fig
Microelectronic Circuits - Fifth Edition Sedra/Smith

36. sedr42021_0530a.jpg
Figure Graphical determination of the signal components vbe, ib, ic, and vce when a signal component vi is superimposed on the dc voltage VBB (see Fig. 5.27).
Microelectronic Circuits - Fifth Edition Sedra/Smith

37. sedr42021_0531.jpg
Figure Effect of bias-point location on allowable signal swing: Load-line A results in bias point QA with a corresponding VCE which is too close to VCC and thus limits the positive swing of vCE. At the other extreme, load-line B results in an operating point too close to the saturation region, thus limiting the negative swing of vCE.
Microelectronic Circuits - Fifth Edition Sedra/Smith

38. sedr42021_0532.jpg
Figure A simple circuit used to illustrate the different modes of operation of the BJT.
Microelectronic Circuits - Fifth Edition Sedra/Smith

39. sedr42021_0533.jpg Figure 5.33 Circuit for Example 5.3.
Microelectronic Circuits - Fifth Edition Sedra/Smith

40. For high  I often ignore the base current in a quick calculation.
Figure Analysis of the circuit for Example 5.4: (a) circuit; (b) circuit redrawn to remind the reader of the convention used in this book to show connections to the power supply; (c) analysis with the steps numbered.
Microelectronic Circuits - Fifth Edition Sedra/Smith

41. sedr42021_0535a.jpg
Figure Analysis of the circuit for Example 5.5. Note that the circled numbers indicate the order of the analysis steps.
Microelectronic Circuits - Fifth Edition Sedra/Smith

42. sedr42021_0536a.jpg
Figure Example 5.6: (a) circuit; (b) analysis with the order of the analysis steps indicated by circled numbers.
Microelectronic Circuits - Fifth Edition Sedra/Smith

43. sedr42021_0537a.jpg
Figure Example 5.7: (a) circuit; (b) analysis with the steps indicated by circled numbers.
Microelectronic Circuits - Fifth Edition Sedra/Smith

44. sedr42021_0538a.jpg
Figure Example 5.8: (a) circuit; (b) analysis with the steps indicated by the circled numbers.
Microelectronic Circuits - Fifth Edition Sedra/Smith

45. sedr42021_0539a.jpg
Figure Example 5.9: (a) circuit; (b) analysis with steps numbered.
Microelectronic Circuits - Fifth Edition Sedra/Smith

46. sedr42021_0540a.jpg Figure 5.40 Circuits for Example 5.10.
Microelectronic Circuits - Fifth Edition Sedra/Smith

47. sedr42021_0541a.jpg Figure 5.41 Circuits for Example 5.11.
Microelectronic Circuits - Fifth Edition Sedra/Smith

48. sedr42021_e0530.jpg
Figure E5.30
Microelectronic Circuits - Fifth Edition Sedra/Smith

49. sedr42021_0542a.jpg
Figure Example 5.12: (a) circuit; (b) analysis with the steps numbered.
Microelectronic Circuits - Fifth Edition Sedra/Smith

50. sedr42021_0543a.jpg
Figure Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB. Both result in wide variations in IC and hence in VCE and therefore are considered to be “bad.” Neither scheme is recommended.
Microelectronic Circuits - Fifth Edition Sedra/Smith

51. A stable biasing method (bypass the emitter resistor with a capacitor to get high AC gain)
Figure Classical biasing for BJTs using a single power supply: (a) circuit; (b) circuit with the voltage divider supplying the base replaced with its Thévenin equivalent.
Microelectronic Circuits - Fifth Edition Sedra/Smith

52. sedr42021_0545.jpg
Figure Biasing the BJT using two power supplies. Resistor RB is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total b-independence of the bias current.
Microelectronic Circuits - Fifth Edition Sedra/Smith

53. sedr42021_0546a.jpg
Figure (a) A common-emitter transistor amplifier biased by a feedback resistor RB. (b) Analysis of the circuit in (a).
Microelectronic Circuits - Fifth Edition Sedra/Smith

54. Current mirroring again – often used in IC’s
Figure (a) A BJT biased using a constant-current source I. (b) Circuit for implementing the current source I.
Microelectronic Circuits - Fifth Edition Sedra/Smith

55. sedr42021_0548a.jpg
Figure (a) Conceptual circuit to illustrate the operation of the transistor as an amplifier. (b) The circuit of (a) with the signal source vbe eliminated for dc (bias) analysis.
Microelectronic Circuits - Fifth Edition Sedra/Smith

56. sedr42021_0549.jpg
Figure Linear operation of the transistor under the small-signal condition: A small signal vbe with a triangular waveform is superimposed on the dc voltage VBE. It gives rise to a collector signal current ic, also of triangular waveform, superimposed on the dc current IC. Here, ic = gmvbe, where gm is the slope of the iC–vBE curve at the bias point Q.
Microelectronic Circuits - Fifth Edition Sedra/Smith

57. sedr42021_0550.jpg
Figure The amplifier circuit of Fig. 5.48(a) with the dc sources (VBE and VCC) eliminated (short circuited). Thus only the signal components are present. Note that this is a representation of the signal operation of the BJT and not an actual amplifier circuit.
Microelectronic Circuits - Fifth Edition Sedra/Smith

58. sedr42021_0551a.jpg
Figure Two slightly different versions of the simplified hybrid-p model for the small-signal operation of the BJT. The equivalent circuit in (a) represents the BJT as a voltage-controlled current source (a transconductance amplifier), and that in (b) represents the BJT as a current-controlled current source (a current amplifier).
Microelectronic Circuits - Fifth Edition Sedra/Smith

59. sedr42021_0552a.jpg
Figure Two slightly different versions of what is known as the T model of the BJT. The circuit in (a) is a voltage-controlled current source representation and that in (b) is a current-controlled current source representation. These models explicitly show the emitter resistance re rather than the base resistance rp featured in the hybrid-p model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

60. sedr42021_0553a.jpg
Figure Example 5.14: (a) circuit; (b) dc analysis; (c) small-signal model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

61. sedr42021_0554a.jpg
Figure Signal waveforms in the circuit of Fig
Microelectronic Circuits - Fifth Edition Sedra/Smith

62. sedr42021_0555a.jpg
Figure Example 5.16: (a) circuit; (b) dc analysis; (c) small-signal model; (d) small-signal analysis performed directly on the circuit.
Microelectronic Circuits - Fifth Edition Sedra/Smith

63. sedr42021_0556.jpg
Figure Distortion in output signal due to transistor cutoff. Note that it is assumed that no distortion due to the transistor nonlinear characteristics is occurring.
Microelectronic Circuits - Fifth Edition Sedra/Smith

64. sedr42021_0557.jpg
Figure Input and output waveforms for the circuit of Fig Observe that this amplifier is noninverting, a property of the common-base configuration.
Microelectronic Circuits - Fifth Edition Sedra/Smith

65. sedr42021_0558a.jpg
Figure The hybrid-p small-signal model, in its two versions, with the resistance ro included.
Microelectronic Circuits - Fifth Edition Sedra/Smith

66. sedr42021_e0540.jpg
Figure E5.40
Microelectronic Circuits - Fifth Edition Sedra/Smith

67. sedr42021_tb0504a.jpg
Table 5.4
Microelectronic Circuits - Fifth Edition Sedra/Smith

68. sedr42021_0559.jpg
Figure Basic structure of the circuit used to realize single-stage, discrete-circuit BJT amplifier configurations.
Microelectronic Circuits - Fifth Edition Sedra/Smith

69. sedr42021_e0541a.jpg
Figure E5.41
Microelectronic Circuits - Fifth Edition Sedra/Smith

70. sedr42021_tb0505a.jpg
Table 5.5
Microelectronic Circuits - Fifth Edition Sedra/Smith

71. sedr42021_0560a.jpg
Figure (a) A common-emitter amplifier using the structure of Fig (b) Equivalent circuit obtained by replacing the transistor with its hybrid-p model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

72. sedr42021_0561a.jpg
Figure (a) A common-emitter amplifier with an emitter resistance Re. (b) Equivalent circuit obtained by replacing the transistor with its T model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

73. Common base amplifiers handle high frequencies better
The isolate the input circuit (emitter) from the output circuit (collector).
Figure (a) A common-base amplifier using the structure of Fig (b) Equivalent circuit obtained by replacing the transistor with its T model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

74. The emitter follower (Common Collector) acts as a buffer amplifier
High input impedance
Low output impedance
Power gain
Unity voltage gain
Figure (a) An emitter-follower circuit based on the structure of Fig (b) Small-signal equivalent circuit of the emitter follower with the transistor replaced by its T model augmented with ro. (c) The circuit in (b) redrawn to emphasize that ro is in parallel with RL. This simplifies the analysis considerably.
Microelectronic Circuits - Fifth Edition Sedra/Smith

75. sedr42021_0564.jpg
Figure (a) An equivalent circuit of the emitter follower obtained from the circuit in Fig. 5.63(c) by reflecting all resistances in the emitter to the base side. (b) The circuit in (a) after application of Thévenin theorem to the input circuit composed of vsig, Rsig, and RB.
Microelectronic Circuits - Fifth Edition Sedra/Smith

76. sedr42021_0565.jpg
Figure (a) An alternate equivalent circuit of the emitter follower obtained by reflecting all base-circuit resistances to the emitter side. (b) The circuit in (a) after application of Thévenin theorem to the input circuit composed of vsig, Rsig / (b 1 1), and RB / (b 1 1).
Microelectronic Circuits - Fifth Edition Sedra/Smith

77. sedr42021_0566.jpg
Figure Thévenin equivalent circuit of the output of the emitter follower of Fig. 5.63(a). This circuit can be used to find vo and hence the overall voltage gain vo/vsig for any desired RL.
Microelectronic Circuits - Fifth Edition Sedra/Smith

78. sedr42021_tb0506a.jpg
Table 5.6
Microelectronic Circuits - Fifth Edition Sedra/Smith

79. sedr42021_0567.jpg Figure 5.67 The high-frequency hybrid-p model.
Microelectronic Circuits - Fifth Edition Sedra/Smith

80. sedr42021_0568.jpg
Figure Circuit for deriving an expression for hfe(s) ; Ic/Ib.
Microelectronic Circuits - Fifth Edition Sedra/Smith

81. sedr42021_0569.jpg Figure 5.69 Bode plot for uhfeu.
Microelectronic Circuits - Fifth Edition Sedra/Smith

82. sedr42021_0570.jpg Figure 5.70 Variation of fT with IC.
Microelectronic Circuits - Fifth Edition Sedra/Smith

83. sedr42021_tb0507a.jpg
Table 5.7
Microelectronic Circuits - Fifth Edition Sedra/Smith

84. sedr42021_0571a.jpg
Figure (a) Capacitively coupled common-emitter amplifier. (b) Sketch of the magnitude of the gain of the CE amplifier versus frequency. The graph delineates the three frequency bands relevant to frequency-response determination.
Microelectronic Circuits - Fifth Edition Sedra/Smith

85. sedr42021_0572a.jpg
Figure Determining the high-frequency response of the CE amplifier: (a) equivalent circuit; (b) the circuit of (a) simplified at both the input side and the output side; (c) equivalent circuit with Cm replaced at the input side with the equivalent capacitance Ceq; (d) sketch of the frequency-response plot, which is that of a low-pass STC circuit.
Microelectronic Circuits - Fifth Edition Sedra/Smith

86. sedr42021_0573a.jpg
Figure Analysis of the low-frequency response of the CE amplifier: (a) amplifier circuit with dc sources removed; (b) the effect of CC1 is determined with CE and CC2 assumed to be acting as perfect short circuits;
Microelectronic Circuits - Fifth Edition Sedra/Smith

87. sedr42021_0573c.jpg
Figure (Continued) (c) the effect of CE is determined with CC1 and CC2 assumed to be acting as perfect short circuits; (d) the effect of CC2 is determined with CC1 and CE assumed to be acting as perfect short circuits;
Microelectronic Circuits - Fifth Edition Sedra/Smith

88. sedr42021_0573e.jpg
Figure (Continued) (e) sketch of the low-frequency gain under the assumptions that CC1, CE, and CC2 do not interact and that their break (or pole) frequencies are widely separated.
Microelectronic Circuits - Fifth Edition Sedra/Smith

89. sedr42021_0574.jpg Figure 5.74 Basic BJT digital logic inverter.
Microelectronic Circuits - Fifth Edition Sedra/Smith

90. sedr42021_0575.jpg
Figure Sketch of the voltage transfer characteristic of the inverter circuit of Fig for the case RB 5 10 kW, RC 5 1 kW, b 5 50, and VCC 5 5 V. For the calculation of the coordinates of X and Y, refer to the text.
Microelectronic Circuits - Fifth Edition Sedra/Smith

91. sedr42021_0576.jpg
Figure The minority-carrier charge stored in the base of a saturated transistor can be divided into two components: That in blue produces the gradient that gives rise to the diffusion current across the base, and that in gray results from driving the transistor deeper into saturation.
Microelectronic Circuits - Fifth Edition Sedra/Smith

92. sedr42021_e0553.jpg
Figure E5.53
Microelectronic Circuits - Fifth Edition Sedra/Smith

93. sedr42021_s0576.jpg
Figure The transport form of the Ebers-Moll model for an npn BJT.
Microelectronic Circuits - Fifth Edition Sedra/Smith

94. sedr42021_0577.jpg
Figure The SPICE large-signal Ebers-Moll model for an npn BJT.
Microelectronic Circuits - Fifth Edition Sedra/Smith

95. sedr42021_0578.jpg
Figure The PSpice testbench used to demonstrate the dependence of bdc on the collector bias current IC for the Q2N3904 discrete BJT (Example 5.20).
Microelectronic Circuits - Fifth Edition Sedra/Smith

96. sedr42021_0579.jpg
Figure Dependence of bdc on IC (at VCE 5 2 V) in the Q2N3904 discrete BJT (Example 5.20).
Microelectronic Circuits - Fifth Edition Sedra/Smith

97. sedr42021_0580.jpg
Figure Capture schematic of the CE amplifier in Example 5.21.
Microelectronic Circuits - Fifth Edition Sedra/Smith

98. sedr42021_0581.jpg
Figure Frequency response of the CE amplifier in Example 5.21 with Rce = 0 and Rce = 130 .
Microelectronic Circuits - Fifth Edition Sedra/Smith

99. The remaining 54 slides are for end-of-chapter problems
Figure P5.20
Microelectronic Circuits - Fifth Edition Sedra/Smith

100. sedr42021_p05021a.jpg
Figure P5.21
Microelectronic Circuits - Fifth Edition Sedra/Smith

101. sedr42021_p05024a.jpg
Figure P5.24
Microelectronic Circuits - Fifth Edition Sedra/Smith

102. sedr42021_p05026.jpg
Figure P5.26
Microelectronic Circuits - Fifth Edition Sedra/Smith

103. sedr42021_p05036.jpg
Figure P5.36
Microelectronic Circuits - Fifth Edition Sedra/Smith

104. sedr42021_p05044.jpg
Figure P5.44
Microelectronic Circuits - Fifth Edition Sedra/Smith

105. sedr42021_p05053.jpg
Figure P5.53
Microelectronic Circuits - Fifth Edition Sedra/Smith

106. sedr42021_p05057.jpg
Figure P5.57
Microelectronic Circuits - Fifth Edition Sedra/Smith

107. sedr42021_p05058a.jpg
Figure P5.58
Microelectronic Circuits - Fifth Edition Sedra/Smith

108. sedr42021_p05065.jpg
Figure P5.65
Microelectronic Circuits - Fifth Edition Sedra/Smith

109. sedr42021_p05066.jpg
Figure P5.66
Microelectronic Circuits - Fifth Edition Sedra/Smith

110. sedr42021_p05067a.jpg
Figure P5.67
Microelectronic Circuits - Fifth Edition Sedra/Smith

111. sedr42021_p05068.jpg
Figure P5.68
Microelectronic Circuits - Fifth Edition Sedra/Smith

112. sedr42021_p05069.jpg
Figure P5.69
Microelectronic Circuits - Fifth Edition Sedra/Smith

113. sedr42021_p05071.jpg
Figure P5.71
Microelectronic Circuits - Fifth Edition Sedra/Smith

114. sedr42021_p05072.jpg
Figure P5.72
Microelectronic Circuits - Fifth Edition Sedra/Smith

115. sedr42021_p05074.jpg
Figure P5.74
Microelectronic Circuits - Fifth Edition Sedra/Smith

116. sedr42021_p05076.jpg
Figure P5.76
Microelectronic Circuits - Fifth Edition Sedra/Smith

117. sedr42021_p05078.jpg
Figure P5.78
Microelectronic Circuits - Fifth Edition Sedra/Smith

118. sedr42021_p05079a.jpg
Figure P5.79
Microelectronic Circuits - Fifth Edition Sedra/Smith

119. sedr42021_p05081.jpg
Figure P5.81
Microelectronic Circuits - Fifth Edition Sedra/Smith

120. sedr42021_p05082.jpg
Figure P5.82
Microelectronic Circuits - Fifth Edition Sedra/Smith

121. sedr42021_p05083.jpg
Figure P5.83
Microelectronic Circuits - Fifth Edition Sedra/Smith

122. sedr42021_p05084.jpg
Figure P5.84
Microelectronic Circuits - Fifth Edition Sedra/Smith

123. sedr42021_p05085.jpg
Figure P5.85
Microelectronic Circuits - Fifth Edition Sedra/Smith

124. sedr42021_p05086.jpg
Figure P5.86
Microelectronic Circuits - Fifth Edition Sedra/Smith

125. sedr42021_p05087a.jpg
Figure P5.87
Microelectronic Circuits - Fifth Edition Sedra/Smith

126. sedr42021_p05096.jpg
Figure P5.96
Microelectronic Circuits - Fifth Edition Sedra/Smith

127. sedr42021_p05097.jpg
Figure P5.97
Microelectronic Circuits - Fifth Edition Sedra/Smith

128. sedr42021_p05098.jpg
Figure P5.98
Microelectronic Circuits - Fifth Edition Sedra/Smith

129. sedr42021_p05099.jpg
Figure P5.99
Microelectronic Circuits - Fifth Edition Sedra/Smith

130. sedr42021_p05100.jpg
Figure P5.100
Microelectronic Circuits - Fifth Edition Sedra/Smith

131. sedr42021_p05101.jpg
Figure P5.101
Microelectronic Circuits - Fifth Edition Sedra/Smith

132. sedr42021_p05112.jpg
Figure P5.112
Microelectronic Circuits - Fifth Edition Sedra/Smith

133. sedr42021_p05115.jpg
Figure P5.115
Microelectronic Circuits - Fifth Edition Sedra/Smith

134. sedr42021_p05116.jpg
Figure P5.116
Microelectronic Circuits - Fifth Edition Sedra/Smith

135. sedr42021_p05124.jpg
Figure P5.124
Microelectronic Circuits - Fifth Edition Sedra/Smith

136. sedr42021_p05126.jpg
Figure P5.126
Microelectronic Circuits - Fifth Edition Sedra/Smith

137. sedr42021_p05130.jpg
Figure P5.130
Microelectronic Circuits - Fifth Edition Sedra/Smith

138. sedr42021_p05134.jpg
Figure P5.134
Microelectronic Circuits - Fifth Edition Sedra/Smith

139. sedr42021_p05135.jpg
Figure P5.135
Microelectronic Circuits - Fifth Edition Sedra/Smith

140. sedr42021_p05136.jpg
Figure P5.136
Microelectronic Circuits - Fifth Edition Sedra/Smith

141. sedr42021_p05137.jpg
Figure P5.137
Microelectronic Circuits - Fifth Edition Sedra/Smith

142. sedr42021_p05141.jpg
Figure P5.141
Microelectronic Circuits - Fifth Edition Sedra/Smith

143. sedr42021_p05143.jpg
Figure P5.143
Microelectronic Circuits - Fifth Edition Sedra/Smith

144. sedr42021_p05144.jpg
Figure P5.144
Microelectronic Circuits - Fifth Edition Sedra/Smith

145. sedr42021_p05147.jpg
Figure P5.147
Microelectronic Circuits - Fifth Edition Sedra/Smith

146. sedr42021_p05148.jpg
Figure P5.148
Microelectronic Circuits - Fifth Edition Sedra/Smith

147. sedr42021_p05159.jpg
Figure P5.159
Microelectronic Circuits - Fifth Edition Sedra/Smith

148. sedr42021_p05161.jpg
Figure P5.161
Microelectronic Circuits - Fifth Edition Sedra/Smith

149. sedr42021_p05162.jpg
Figure P5.162
Microelectronic Circuits - Fifth Edition Sedra/Smith

150. sedr42021_p05166.jpg
Figure P5.166
Microelectronic Circuits - Fifth Edition Sedra/Smith

151. sedr42021_p05167.jpg
Figure P5.167
Microelectronic Circuits - Fifth Edition Sedra/Smith

152. sedr42021_p05171.jpg
Figure P5.171
Microelectronic Circuits - Fifth Edition Sedra/Smith