Download presentation
Presentation is loading. Please wait.
Published byVernon Small Modified over 9 years ago
1
DEVELOPMENT OF A THGEM-BASED PHOTON DETECTOR FOR CHERENKOV IMAGING APPLICATIONS Silvia Dalla Torre INFN - Trieste On behalf of an Alessandria-CERN-Freiburg-Liberec-Prague-Torino-TriesteCollaboration TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
2
OUTLINE A NEW GENERATION OF GASEOUS PHOTON DETECTORS WHY ? HOW ? THGEM CHARACTERISATION GEOMETRICAL PARAMETERS PRODUCTION ASPECTS DETECTING SINGLE PHOTONS MULTILAYER DETECTOR SPECTRA AND GAINS TIME RESOLUTION PHOTOELECTRON EXTRACTION EFFICIENCY CONCLUSIONS TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
3
OUTLINE A NEW GENERATION OF GASEOUS PHOTON DETECTORS WHY ? HOW ? THGEM CHARACTERISATION GEOMETRICAL PARAMETERS PRODUCTION ASPECTS DETECTING SINGLE PHOTONS MULTILAYER DETECTOR SPECTRA AND GAINS TIME RESOLUTION PHOTOELECTRON EXTRACTION EFFICIENCY CONCLUSIONS TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
4
WHY ? TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE THE ONLY ECONOMIC WAY TO COVER LARGE SURFACES ↔ GASEOUS PDs photoconverting vapours are no longer in use, a part CLEO III (rates ! time resolution !) (rates ! time resolution !) the present is represented by MWPC (open geometry!) with CsI (RD26) the first prove (in experiments !) that coupling solid photocathodes and gaseous detectors works Severe recovery time (~ 1 d) after detector trips ion feedback Aging after an integrated charge of a few mC/cm 2 CsI ion Moderate effective gain ~ 10 4 bombardment The way to the future: ion blocking geometries GEM/THGEM allow for multistage detectors Good ion blocking (up to IFB at some % level) MHSP: IFB at 10 -4 level (opening the way to solid photocathodes for visible light?) First step in this direction: PHENIX HBD (not an imaging device !) PAST PRESENT FUTURE
5
HOW ? REQUESTS : ion blocking (moderate space) resolution (~1 mm) good time resolution (high rate applications) high gain production of large surfaces robustness TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE our ANSWER : THGEM-based MPGDs THGEM-based MPGDs GEM derived – PCB technology GEM derived – PCB technology Proposed and explored by A. Breskin et al.; V. Peskov et al. Proposed and explored by A. Breskin et al.; V. Peskov et al. production: standard PCB techniques production: standard PCB techniques robust robust large gain reported large gain reported large surface fraction available for photon converter coating large surface fraction available for photon converter coating POTENTIALLY ABLE TO MATCH ALL THE REQUESTS
6
OUTLINE A NEW GENERATION OF GASEOUS PHOTON DETECTORS WHY ? HOW ? THGEM CHARACTERISATION GEOMETRICAL PARAMETERS PRODUCTION ASPECTS DETECTING SINGLE PHOTONS MULTILAYER DETECTOR SPECTRA AND GAINS TIME RESOLUTION PHOTOELECTRON EXTRACTION EFFICIENCY CONCLUSIONS TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
7
THGEM and SETUP Single THGEM layer in the chamber, active surface: 30 x 30 mm 2 ; Single THGEM layer in the chamber, active surface: 30 x 30 mm 2 ; Gas mixture Argon/CO 2 (70/30) Gas mixture Argon/CO 2 (70/30) Sources: X-Ray (Cu – collimated source) and 55 Fe (uniform irradiation); Sources: X-Ray (Cu – collimated source) and 55 Fe (uniform irradiation); Two approaches: gain from signal amplitude spectra Two approaches: gain from signal amplitude spectra and from current measurements (pico-ammeters with resolution ~1pA) TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE 7 Elena Rocco - RD51 MPGD - Paris, October 2008 SKETCH OFTHE CHAMBER diam pitch rim Picture at the microscope bottom To detect ionizing particle : V 3 < V 2 < V 1 <V 0 V3V3 V2V2 V1V1 V0V0 E drift = (V 3 -V 2 ) /d 1 E induction = (V 1 -V 0 ) /d 2 V = V 2 -V 1 d1d1 d2d2 Metallographic section THGEM top
8
EXAMPLES OF THGEMs TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE R3R3 P1P1 W2W2 P 1 : D=0.8 mm Pitch=2 mm Rim=0.04 mm Thick=1mm R 3 : D=0.2 mm Pitch=0.5 mm Rim=0.01 mm Thick=0.2mm W 2 : D=0.3 mm Pitch=0.7 mm Rim=0.1 mm Thick=0.4mm A MULTIPARAMETER SPACE TO EXPLORE ! 4 geometrical parameters: diameter pitch rim thickness + material + production procedure 30 different THGEMs characterized HERE: a flavour about gain, gain stability, rate capabilities and production aspects A MULTIPARAMETER SPACE TO EXPLORE ! 4 geometrical parameters: diameter pitch rim thickness + material + production procedure
9
GAIN STABILITY 1/2 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE 9 A factor >>2 in gain variation between the initial drop and the stabilization; Different behaviour for THGEMs with and without (or small) rim. Name Diam (mm) Pitch (mm) Rim ( m) Thick (mm) Std_no_rim0.30.700.4 Std_10_μm0.30.7100.4 Std_100_μm0.30.71000.4 Continuously irradiated with collimated X-Ray source Small rim Different ΔV applied to the THGEMs, maximizing the gain for stable working conditions zooming
10
GAIN STABILITY 2/2 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE 10 Short time gain variation Long time gain variation 55 Fe source; uniform irradiation irradiation at HV switch on (after ~1 day with no voltage) 100 μm rim no rim START IRRADIATING after ~10 hours at nominal voltage Name Diam (mm) Pitch (mm) Rim ( m) Thick (mm) M10.40.800.4 C40.40.81000.4
11
RATE CAPABILITY TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE RECALL: 120 kHz/ mm 2, 300 e- single photoelectron rates of ~35 MHz/ mm 2 120 kHz / mm 2 PARAMETERS: Diameter = 0.3 mm Pitch= 0.7 mm Thickness = 0.4 mm Rim = 0.1 mm Gas: Ar/CO 2 – 70/30 20% PARAMETERS: Diameter = 0.3 mm Pitch= 0.7 mm Thickness = 0.4 mm Rim = 0 mm Gas: Ar/CO 2 – 70/30
12
PRODUCTION ASPECTS RIM production techniques – 5 approaches tested TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE Weizmann technique CERN : etching from hole edges w/o image transfer Double drilling etching from hole edges w image transfer Global etching: No photoresistive layer (proposed by ELTOS)
13
OUTLINE A NEW GENERATION OF GASEOUS PHOTON DETECTORS WHY ? HOW ? THGEM CHARACTERISATION GEOMETRICAL PARAMETERS PRODUCTION ASPECTS DETECTING SINGLE PHOTONS MULTILAYER DETECTOR SPECTRA AND GAINS TIME RESOLUTION PHOTOELECTRON EXTRACTION EFFICIENCY CONCLUSIONS TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
14
MULTILAYER DETECTOR FOR SINGLE PHOTON DETECTION TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE 30 mm CsI coating no coating anode (with pads) drift WIRES THGEM 2 E induction E transfer 2.0 mm CsI THGEM 3 THGEM 4 2.0 mm THGEM 1 THGEM geometry: - thickness = 0.4 mm - hole diameter = 0.4 mm - pitch = 0.8 mm -rim = 10 μm fused silca window detector NOTE: reflective photocathode
15
UV LIGHT PULSED SOURCES 1.Model UV LED-255 by Seoul Optodevice Co., Ltd, Seoul, Korea (South) Central wavelength: 255 ± 10 nm Spectral line width: <20nm FWHM also called germicidal ray (disinfection) Applications: Water/Surface purification, Laboratory testing 2.PLS 265-10 (pulsed LED) and controller by PicoQuant GmbH, Berlin, Germany by PicoQuant GmbH, Berlin, Germany 600 ps long pulses up to 40 MHz TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE UV LED-255 peak @ 258 PLS 265-10 peak @ 269 spectrophotometer measurement 220 240 260 280 300 nm
16
SINGLE PHOTON DETECTION: AMPLITUDE SPECTRA TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE GAIN: 104 00 - ─ gain: 110 000 - ─ gain: 113 000 - stable detector bevariour at gains up to ~130 000 Ar/CH 4 : 40/60
17
SINGLE PHOTON DETECTION: TIME RESOLUTION TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE Recall: TDC bin size: 108 ps pulse width: 600 ps No detector optimisation for time response performed so far
18
PHOTOELECTRON EXTRACTION 1/6 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE fused silica window e-e- pA CsI UV light source Keithley picoAmp atmospheric pressure, reproducibility @ 1% level E(V / cm) photocurrent (pA) - ─ CH 4 ─ Ar/CH 4, 66/34 ─ Ne/CH 4, 62/38 ─ Ar/CO 2, 70/30 10 mm Photocurrent measurements in various gas atmospheres
19
PHOTOELECTRON EXTRACTION 2/6 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE Photoelectron extraction vs V and E, simulations and measurements anode (with pads) WIRES (V1) CsI THGEM 1 ( top: V2, bottom: V3) E fused silica window E = (V2-V1) / d V = V3 – V2 d UV light source E_field, sign convention 0
20
TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE PHOTOELECTRON EXTRACTION 3/6 photoelectron trajectories from a THGEM photocathode, simulation, multiplication switched off thickness 0.6 mm, diam. 0.4 mm, pitch: 0.8 mm, ΔV = 1500 V x cross-section y cross-section external field above the THGEM : 0 x y
21
TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE PHOTOELECTRON EXTRACTION 4/6 photoelectron trajectories from a THGEM photocathode, simulation, multiplication switched off thickness 0.6 mm, diam. 0.4 mm, pitch: 0.8 mm, ΔV = 1500 V x y external field above the THGEM : - 500 V /cm: photoelectron lost (not entering the holes) E x cross-section y cross-section x y
22
TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE PHOTOELECTRON EXTRACTION 5/6 photoelectron trajectories from a THGEM photocathode, simulation, multiplication switched off thickness 0.6 mm, diam. 0.4 mm, pitch: 0.8 mm, ΔV = 1500 V x y external field above the THGEM : + 500 V /cm: photoelectron lost (too low field to extract them) E x cross-section y cross-section x y
23
PHOTOELECTRON EXTRACTION 6/6 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE Anodic current in a THGEM detector versus the external electric field applied, a measurement Ar/CH 4 : 40/60; 60/40 V = 1kV 1.1, 1.2 1.25, 1.3 1.35 1.5 The behaviour predicted by the simulation is confirmed! A clear suggestion to optimise the detector design ZOOM
24
OUTLINE A NEW GENERATION OF GASEOUS PHOTON DETECTORS WHY ? HOW ? THGEM CHARACTERISATION GEOMETRICAL PARAMETERS PRODUCTION ASPECTS DETECTING SINGLE PHOTONS MULTILAYER DETECTOR SPECTRA AND GAINS TIME RESOLUTION PHOTOELECTRON EXTRACTION CONCLUSIONS TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
25
CONCLUSIONS Intense R&D activity towards THGEM based photon detectors In parallel and in close contact with Weizman, Coimbra, Bari, ST.Etienne in the context of RD51 – the MPGD R&D Collaboration Systematic characterization of THGEM properties Our recomandation: use no/small rim THGEMs ! Detection of single photons: Gains > 10 5 in electrically stable detectors with ≤10 m rim and a 4-layer structure time resolution ~ 7 ns effective photoelectron extraction possible in CH4 mixtures NO STOPPING POINTS DETECTED, even if still a long way to go TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
26
SPARE SLIDES TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
28
SUMMARY 1/2 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
29
SUMMARY 2/2 TIPP09 - Tsukuba, Japan 11-17/3/2009 A THGEM-based photon detector Silvia DALLA TORRE
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.