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Published byElaine Reeves Modified over 9 years ago
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Introduction EE1411 Design Rules
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EE1412 3D Perspective Polysilicon Aluminum
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EE1413 Design Rules Interface between designer and process engineer Guidelines for constructing process masks Unit dimension: Minimum line width scalable design rules: lambda parameter absolute dimensions (micron rules)
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EE1414 CMOS Process Layers Layer Polysilicon Metal1 Metal2 Contact To Poly Contact To Diffusion Via Well (p,n) Active Area (n+,p+) ColorRepresentation Yellow Green Red Blue Magenta Black Select (p+,n+) Green
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EE1415 Intra-Layer Design Rules Metal2 4 3
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EE1416 Transistor Layout
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EE1417 Vias and Contacts
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EE1418 Select Layer
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EE1419 CMOS Inverter Layout
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EE14110 Layout Editor
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EE14111 Design Rule Checker poly_not_fet to all_diff minimum spacing = 0.14 um.
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EE14112 Sticks Diagram 1 3 In Out V DD GND Stick diagram of inverter Dimensionless layout entities Only topology is important Final layout generated by “compaction” program
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Introduction EE14113 Packaging
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EE14114 Bonding Techniques
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EE14115 Package-to-Board Interconnect
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EE14116 Package Types
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