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By: Joaquin Gabriels November 24 th, 2008
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Overview of CMOS CMOS Fabrication Process Overview CMOS Fabrication Process Problems with Current CMOS Fabrication Future Changes in CMOS Fabrication
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Complementary metal–oxide–semiconductor ( CMOS ) Has many different uses: Integrated Circuits Data converters Integrated transceivers Image sensors Logic circuits http:// en.wikipedia.org/wiki/CMOS
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NAND Circuit
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http:// lsmwww.epfl.ch/Education/former/2002- 2003/VLSIDesign/ch02/ch02.html
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1. Create a pattern. 2. Oxidize small layer, about 1µm thick. 3. Place photoresist on top of SiO 2 4. Place mask(pattern) above photoresist and expose it to UV light.
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1. Etch away SiO 2 using HF acid or plasma. 2. Remove remaining photoresist with acids.
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To create a n well: Diffusion Heat wafer in Arsenic gas chamber until diffusion occurs. Ion Implantation Arsenic or phosphorous are implanted in window.
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A thin layer of oxide is deposited. A thin layer of polysilicon is deposited using Chemical Vapor Deposition (CVD).
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http://en.wikipedia.org/wiki/Chemical_vapor_deposition
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Remove oxide layer using acid. Dope open area using Ion implantation or diffusion.
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Optical lithography is limited by the light frequency. Material limitations Yield limitations Space limitations
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Material changes like using high-k materials. Design changes SOI(Silicon On Insulator) Double Gate (Finfet) Twin-Tub Process
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http://www.fujitsu.com/downloads/MAG/vol39-1/paper02.pdf
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CMOS Digital Integrated Circuit Design - Analysis and Design by S.M. Kang and Y. Leblebici http://www.fujitsu.com/downloads/MAG/vol39-1/paper02.pdf “Introduction to VLSI Circuits and Systems,” John Wiley and Sons, 2002 http://lsmwww.epfl.ch/Education/former/2002- 2003/VLSIDesign/ch02/ch02.html http://en.wikipedia.org/wiki/Chemical_vapor_deposition users.ece.utexas.edu/~adnan/ vlsi -05/lec0Fab.ppt http://en.wikipedia.org/wiki/CMOS www.usna.edu/EE/ee452/LectureNotes/02- _ CMOS _Process_Steps/08_Simple_ CMOS _Fab.ppt http://en.wikipedia.org/wiki/Silicon_on_insulator access.ee.ntu.edu.tw/course/VLSI_design_90second/data/Chapter%203%20Part 2%2003-20-2002.doc
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