1. Tecport E beam Evaporator Evaporated thin films Process parameters

2. Process Parameters  Base pressure: 4E-6 Torr  Deposition pressure: 8.71E-6 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 82mA  Pump down time: 2hrs 35min  Deposition time: 35min 27s  rise and soak time: 10min ( total) Al2O3

3. Analysis Dektak Surface profiler  Thickness: 150.5nm Ellipsometer  thickness : 133nm Al2O3 RESULTS

4.  Process Parameters  Base pressure: 3E-6 Torr  Deposition pressure: 4.86E-5 Torr  1 sccm O2 was introduced during deposition (O2 started 1 min before deposition)  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 170mA  Pump down time: 4hrs 35min  Deposition time: 40min 30s  rise and soak time: 21min( total) Al2O3 with O2

5. Al2O3 with O2 results Analysis Dektak Surface profiler Thickness: 150nm Ellipsometer thickness : 144nm

6. Process Parameters  Base pressure: 2E-6 Torr  Deposition pressure: 6E-6 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 82mA  Deposition time: 29min 34s  rise and soak time: 10min ( total) SiO2

7. Process Parameters  Base pressure: 2E-6 Torr  Deposition pressure: 4e-5 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 30mA  Deposition time: 29min 34s  rise and soak time: 10min ( total) SiO2 with O2

8. SiO2 vs SiO2 with O2 RESULTS Analysis Dektak Surface profiler Thickness: 134nm Thickness with O2: 150nm

10. Process Parameters  Base pressure: 3E-6 Torr  Deposition pressure: 9E-5 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 65mA  Deposition time: 32min  rise and soak time: 23min ( total) Aluminum (Al) 50nm

11. Process Parameters  Base pressure: 4.8E-6 Torr  Deposition pressure: 7E-6 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 37mA  Deposition time: 22min 31s  rise and soak time: 10min ( total) Chromium(Cr) 50nm

12. Process Parameters  Base pressure: 4.05E-6 Torr  Deposition pressure: 2.04E-6 Torr  Rate of deposition: 1Å/s  Voltage applied: 7kV  current : during deposition 126mA  Deposition time: 25min 34s  rise and soak time: 10min ( total) Gold(Au) 50nm