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CSE477 L07 Pass Transistor Logic.1Irwin&Vijay, PSU, 2003 CSE477 VLSI Digital Circuits Fall 2003 Lecture 07: Pass Transistor Logic Mary Jane Irwin ( www.cse.psu.edu/~mji ) www.cse.psu.edu/~cg477www.cse.psu.edu/~mji www.cse.psu.edu/~cg477 [Adapted from Rabaey’s Digital Integrated Circuits, Second Edition, ©2003 J. Rabaey, A. Chandrakasan, B. Nikolic]
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CSE477 L07 Pass Transistor Logic.2Irwin&Vijay, PSU, 2003 Review: Static Complementary CMOS V DD F(In1,In2,…InN) In1 In2 InN In1 In2 InN PUN PDN PUN and PDN are dual logic networks … … High noise margins l V OH and V OL are at V DD and GND, respectively Low output impedance, high input impedance No static power consumption l Never a direct path between V DD and GND in steady state Delay a function of load capacitance and transistor on resistance Comparable rise and fall times (under the appropriate relative transistor sizing conditions)
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CSE477 L07 Pass Transistor Logic.3Irwin&Vijay, PSU, 2003 Review: Static CMOS Full Adder Circuit B BB BB B B B A A A A A A A A C in !C out !Sum !C out = !C in (!A v !B) v !A !B C out = C in (A v B) v A B !Sum = C out (!A v !B v !C in ) v !A !B !C in Sum = !C out (A v B v C in ) v A B C in
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CSE477 L07 Pass Transistor Logic.4Irwin&Vijay, PSU, 2003 NMOS Transistors in Series/Parallel Primary inputs drive both gate and source/drain terminals NMOS switch closes when the gate input is high Remember - NMOS transistors pass a strong 0 but a weak 1 AB XY X = Y if A and B XY A B X = Y if A or B
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CSE477 L07 Pass Transistor Logic.5Irwin&Vijay, PSU, 2003 PMOS Transistors in Series/Parallel Primary inputs drive both gate and source/drain terminals PMOS switch closes when the gate input is low Remember - PMOS transistors pass a strong 1 but a weak 0 AB XY X = Y if A and B = A + B XY A B X = Y if A or B = A B
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CSE477 L07 Pass Transistor Logic.6Irwin&Vijay, PSU, 2003 Pass Transistor (PT) Logic A B F B 0 Gate is static – a low-impedance path exists to both supply rails under all circumstances N transistors instead of 2N No static power consumption Ratioless Bidirectional (versus undirectional) A 0 B B F
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CSE477 L07 Pass Transistor Logic.7Irwin&Vijay, PSU, 2003 Pass Transistor (PT) Logic A B F B 0 A 0 B B = A B F Gate is static – a low-impedance path exists to both supply rails under all circumstances N transistors instead of 2N No static power consumption Ratioless Bidirectional (versus undirectional)
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CSE477 L07 Pass Transistor Logic.8Irwin&Vijay, PSU, 2003 VTC of PT AND Gate A 0 B B F = A B 0.5/0.25 1.5/0.25 B=V DD, A=0 V DD A=V DD, B=0 V DD A=B=0 V DD V out, V V in, V l Pure PT logic is not regenerative - the signal gradually degrades after passing through a number of PTs (can fix with static CMOS inverter insertion)
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CSE477 L07 Pass Transistor Logic.9Irwin&Vijay, PSU, 2003 Differential PT Logic (CPL) A B A B PT Network F A B A B Inverse PT Network F F F F=AB A A B B BB AND/NAND A A B F=A+B B BB OR/NOR A A F=A B BB XOR/XNOR A A
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CSE477 L07 Pass Transistor Logic.10Irwin&Vijay, PSU, 2003 CPL Properties Differential so complementary data inputs and outputs are always available (so don’t need extra inverters) Still static, since the output defining nodes are always tied to V DD or GND through a low resistance path Design is modular; all gates use the same topology, only the inputs are permuted. Simple XOR makes it attractive for structures like adders Fast (assuming number of transistors in series is small) Additional routing overhead for complementary signals Still have static power dissipation problems
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CSE477 L07 Pass Transistor Logic.11Irwin&Vijay, PSU, 2003 CPL Full Adder A A BB C in !Sum Sum C out !C out A A B B B BC in
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CSE477 L07 Pass Transistor Logic.12Irwin&Vijay, PSU, 2003 CPL Full Adder A A BB C in !Sum Sum C out !C out A A B B B BC in
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CSE477 L07 Pass Transistor Logic.13Irwin&Vijay, PSU, 2003 NMOS Only PT Driving an Inverter V x does not pull up to V DD, but V DD – V Tn In = V DD A = V DD V x = V DD -V Tn M1M1 M2M2 B SD Threshold voltage drop causes static power consumption (M 2 may be weakly conducting forming a path from V DD to GND) Notice V Tn increases for pass transistor due to body effect (V SB ) V GS
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CSE477 L07 Pass Transistor Logic.14Irwin&Vijay, PSU, 2003 Voltage Swing of PT Driving an Inverter Body effect – large V SB at x - when pulling high (B is tied to GND and S charged up close to V DD ) So the voltage drop is even worse V x = V DD - (V Tn0 + ( (|2 f | + V x ) - |2 f |)) In = 0 V DD V DD x Out 0.5/0.25 1.5/0.25 Time, ns Voltage, V In Out x = 1.8V D S B
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CSE477 L07 Pass Transistor Logic.15Irwin&Vijay, PSU, 2003 Cascaded NMOS Only PTs B = V DD Out M1M1 y M2M2 Swing on y = V DD - V Tn1 - V Tn2 x M1M1 B = V DD Out y M2M2 Swing on y = V DD - V Tn1 C = V DD A = V DD C = V DD A = V DD l Pass transistor gates should never be cascaded as on the left l Logic on the right suffers from static power dissipation and reduced noise margins x = V DD - V Tn1 G S G S
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CSE477 L07 Pass Transistor Logic.16Irwin&Vijay, PSU, 2003 Solution 1: Level Restorer For correct operation M r must be sized correctly (ratioed) Level Restorer M1M1 M2M2 A=0 MnMn MrMr x B Out=1 off = 0 A=1 Out=0 on 1 Full swing on x (due to Level Restorer) so no static power consumption by inverter No static backward current path through Level Restorer and PT since Restorer is only active when A is high
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CSE477 L07 Pass Transistor Logic.17Irwin&Vijay, PSU, 2003 Transient Level Restorer Circuit Response Voltage, V Time, ps W/L r =1.75/0.25 W/L r =1.50/0.25 W/L r =1.25/0.25 W/L r =1.0/0.25 W/L n =0.50/0.25 W/L 2 =1.50/0.25 W/L 1 =0.50/0.25 node x never goes below V M of inverter so output never switches Restorer has speed and power impacts: increases the capacitance at x, slowing down the gate; increases t r (but decreases t f )
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CSE477 L07 Pass Transistor Logic.18Irwin&Vijay, PSU, 2003 Solution 2: Multiple V T Transistors Technology solution: Use (near) zero V T devices for the NMOS PTs to eliminate most of the threshold drop (body effect still in force preventing full swing to V DD ) Impacts static power consumption due to subthreshold currents flowing through the PTs (even if V GS is below V T ) Out In 2 = 0V In 1 = 2.5V A = 2.5V B = 0V low V T transistors sneak path on off but leaking
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CSE477 L07 Pass Transistor Logic.19Irwin&Vijay, PSU, 2003 Solution 3: Transmission Gates (TGs) Full swing bidirectional switch controlled by the gate signal C, A = B if C = 1 AB C C A B C C B C = V DD C = GND A = V DD B C = V DD C = GND A = GND Most widely used solution
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CSE477 L07 Pass Transistor Logic.20Irwin&Vijay, PSU, 2003 Solution 3: Transmission Gates (TGs) Full swing bidirectional switch controlled by the gate signal C, A = B if C = 1 AB C C A B C C B C = V DD C = GND A = V DD B C = V DD C = GND A = GND Most widely used solution
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CSE477 L07 Pass Transistor Logic.21Irwin&Vijay, PSU, 2003 TG Multiplexer GND V DD In 1 In 2 SS SS S S S In 1 F F F = !(In 1 S + In 2 S)
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CSE477 L07 Pass Transistor Logic.22Irwin&Vijay, PSU, 2003 Transmission Gate XOR B A A B
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CSE477 L07 Pass Transistor Logic.23Irwin&Vijay, PSU, 2003 Transmission Gate XOR B A A B 1 off an inverter B !A 0 on weak 0 if !A weak 1 if A A !B
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CSE477 L07 Pass Transistor Logic.24Irwin&Vijay, PSU, 2003 TG Full Adder Sum C out A B C in
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CSE477 L07 Pass Transistor Logic.25Irwin&Vijay, PSU, 2003 Differential TG Logic (DPL) A A B B B AND/NAND F=A B XOR/XNOR A A B B A A B F=AB A A B BABA GND V DD B
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CSE477 L07 Pass Transistor Logic.26Irwin&Vijay, PSU, 2003 Next Time: The MOS Transistor MOS transistor dynamic behavior (R and C) Wire capacitance
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CSE477 L07 Pass Transistor Logic.27Irwin&Vijay, PSU, 2003 Next Lecture and Reminders Next lecture l MOS transistor dynamic behavior -Reading assignment – Rabaey, et al, 3.2.3 & 3.3.3-3.3.5 l Wiring capacitance -Reading assignment – Rabaey, et al, 4.1-4.3.1 Reminders l HW#2 due September 30 th (Tuesday) l Project specs due (on-line) October 9 th l Evening midterm exam scheduled -Monday, October 20 th, 20:15 to 22:15, Location TBD -Only one midterm conflict scheduled
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