1. L23 08April031 Semiconductor Device Modeling and Characterization EE5342, Lecture 23 Spring 2003 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

2. L23 08April032 Discussion of IC-CAP Parameter Extraction Lang. Download and bring a copy of: –http://www.uta.edu/ronc/neff.txt –http://www.uta.edu/ronc/iseff.txt –copy as *.xfm to your gamma acct –import *.xfm to appropriate setup A brief PEL overview in 4/8 lecture. IC-CAP user guide at: http://eesof.tm.agilent.com/docs/iccap/ic_ug/icug_2001.pdf

3. L23 08April033 Importing an.xfm file into a DUT open DUT select Extract / Optimize /File/Open - select.xfm - select "browse" to select neff.xfm Be sure variables selected are in DUT Can plot in DUT/Plots as neff, neff.m and neff.s Likewise for iseff

4. L23 08April034 neff.xfm LINK XFORM ”neff" { data { HYPTABLE "Link Transform" { element "Function" "Program" } BLKEDIT "Program Body" { k = 1.38066e-23 q = 1.60218e-19 T = 273.16 + TNOM Vt = k*T//q

5. L23 08April035 neff.xfm (cont.) vbe = vb - ve ! neff = dv/d(ln(i))/(Vt) lnic = log(ic.b) y = derivative(lnic,vbe,1) !dy/dx = derivative(x,y,1) return y//Vt } dataset { datasize BOTH 51 1 1... meas and simu data... }

6. L23 08April036 iseff.xfm LINK XFORM "iseff" { data { HYPTABLE "Link Transform" { element "Function" "Program" } BLKEDIT "Program Body" { k = 1.38066e-23 q = 1.60218e-19 T = 273.16 + TNOM Vt = k*T//q

7. L23 08April037 iseff.xfm (cont.) vbe = vb - ve ! neff = dv/d(ln(i))/(Vt) lnic = log(ic.b) y = derivative(lnic,vbe,1) !dy/dx = derivative(x,y,1) ne = y//Vt return exp(log(ic)-vbe/(ne*Vt)) } dataset { datasize BOTH 51 1 1... meas and simu data... }

8. L23 08April038 Values for gate work function,  m

9. L23 08April039 Values for  ms with metal gate

10. L23 08April0310 Values for  ms with silicon gate

11. L23 08April0311 Experimental values for  ms Fig 10.15*

12. L23 08April0312 Calculation of the threshold cond, V T

13. L23 08April0313 Equations for V T calculation

14. L23 08April0314 Fully biased n-MOS capacitor 0 y L VGVG V sub =V B E Ox,x > 0 Acceptors Depl Reg e - e - e - e - e - e - n+ VSVS VDVD p-substrate Channel if V G > V T

15. L23 08April0315 Effect of contacts, V S and V D

16. L23 08April0316 Computing the D.R. width at O.S.I. ExEx E max x

17. L23 08April0317 Computing the threshold voltage

18. L23 08April0318

19. L23 08April0319

20. L23 08April0320

21. L23 08April0321 Fully biased MOS capacitor in inversion 0 y L V G >V T V sub =V B E Ox,x > 0 Acceptors Depl Reg e - e - e - e - e - e - n+ V S =V C V D =V C p-substrate Channel

22. L23 08April0322 Flat band with oxide charge (approx. scale) EvEv AlSiO 2 p-Si E Fm E c,Ox E g,ox ~8eV E Fp EcEc EvEv E Fi q(  fp -  ox ) q(V ox ) q(  m -  ox ) q(V FB ) V FB = V G -V B, when Si bands are flat ExEx + -

23. L23 08April0323 Flat-band parameters for n-channel (p-subst)

24. L23 08April0324 MOS energy bands at Si surface for n-channel Fig 8.10**

25. L23 08April0325 Fully biased n- channel V T calc

26. L23 08April0326 References * Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997. **Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986