2. 1 3 MEMS FABRICATION Ken Gilleo PhD ET-Trends LLC 24%

3. 2 MEMS Material Classes  Silicon  Aluminum  Si 3 N 4 (Nitride)  GaAs  SiC  Polymers  SiO 2  Copper  Aluminum  Polymers  SiGe  Silicon Structures Sacrificial  Etchant or process will determine if material is structural or sacrificial

4. 3 Movable Structures  Pivots  Bearings  Hinges  Beams (bend/twist)  Gears  Rack  Wheels  Latch  Switches  Valves  Diaphragms  Turbines  Springs

5. 4 Stationary Structures  Base/platform  Reference mass  Chambers  Channels  Back plate (microphone)  Fittings/ports  Needles/blades

6. 5 MEMS Manufacturing  Use SEMICONDUCTOR processes  Silicon Machining; (1) surface, and (2) bulk: Define mechanical parts by lithography Form sacrificial SiO 2 (or other) in “removal” areas Etch away SiO 2 to free mechanical parts  Many other micro-machining processes and variations are available

7. 6 Sandia SUMMiT Process Substrate oxide nitride sacrificial oxide 1 Poly 1 Poly 2 sacrificial oxide 3 Poly 3 sacrificial oxide 4 Poly 4 Poly 0 Sacrificial oxide 2 Sandia (Surface Machining Process)

8. 7 MEMS Bulk Fabrication  Start with single crystal silicon  Apply etch resist (mask)  Can selectively implant stop etch into Si  Etch unwanted silicon Wet/chemical (anisotropic; etches alone planes) Dry plasma (high resolution)  Simpler shapes, lowest cost (?)

9. 8 Wet or Dry Bulk Process  Wet Etch  Mask: SiO 2, Si 3 N 4  Etchant: KOH, org. base  Etch Retarder: Boron (B)  Dry Etch  Deep Reactive Ion Etching (DRIE)  SF 6 /O 2 Gas  30:1 Aspect Ratio Si membrane

10. 9 Bosch Process best dry etch method 1.Plasma etch 2.Deposit resist 3.Plasma etch 4.Repeat 2, 3. Very high aspect ratios Also being adopted for TSV (vias)

11. 10 LIGA Process  LIGA mask design  Mask fabrication  Substrate preparation  X-ray exposure  X-ray resist development  Electroplate  Panelization  Replication Lithographie Galvanoformung Abformung

12. 11 MEMS Release Remove sacrificial layer Oxide 2 Si Etch & Release More fragile Final step before packaging  A critical very step  Remove holding structure Wet Chem Etch; dissolve silica ; SiO 2 Dry Plasma Etch  Packaging foundry may run this process

13. 12 Wafer Bonding  Fabricate MEMS devices Pumps, pressure sensors Values, controllers Chambers; analyzers, reactors  Integrated MEMS Electronics; logic, memory, sensors Optics, photonics  Pre-packaging; capping wafers  Complete Wafer-Level Package (WLP)

14. 13 Wafer Bonding Methods PROCESSTemp Hermeticity ReliabilityAvailability Cost Metallurgical mod- high highexcel.highmod. Fusionhigh excel.modmod. Anodicmodhighexcel.modmod. Inorg. adhes.modgood-highexcel.highmod. Brazinghigh excel.highmod. Laser-assisted localized ~~ limited ~ Polymer, thermoset low Non-hermetic goodhighlow Polymer, thermoplastic mod. Near-hermetic good limited low Polymer, UV low Non-hermetic mod limited low

15. 14 Summary of Fabrication  MEMS can use existing semiconductor mfg  Major boost with existing infrastructure  Parallel process; productivity  Older foundries 6” moving to 8” (don’t need 12”)  Combine CMOS logic & MEMS  MEMS can build almost any macrostructure  Cavities, electronics may require wafer bonding