1. About OMICS Group OMICS Group International is an amalgamation of Open Access publications and worldwide international science conferences and events. Established in the year 2007 with the sole aim of making the information on Sciences and technology ‘Open Access’, OMICS Group publishes 400 online open access scholarly journals in all aspects of Science, Engineering, Management and Technology journals. OMICS Group has been instrumental in taking the knowledge on Science & technology to the doorsteps of ordinary men and women. Research Scholars, Students, Libraries, Educational Institutions, Research centers and the industry are main stakeholders that benefitted greatly from this knowledge dissemination. OMICS Group also organizes 300 International conferences annually across the globe, where knowledge transfer takes place through debates, round table discussions, poster presentations, workshops, symposia and exhibitions.Open Access publicationsscholarly journalsInternational conferences

2. About OMICS Group Conferences OMICS Group International is a pioneer and leading science event organizer, which publishes around 400 open access journals and conducts over 300 Medical, Clinical, Engineering, Life Sciences, Pharma scientific conferences all over the globe annually with the support of more than 1000 scientific associations and 30,000 editorial board members and 3.5 million followers to its credit. OMICS Group has organized 500 conferences, workshops and national symposiums across the major cities including San Francisco, Las Vegas, San Antonio, Omaha, Orlando, Raleigh, Santa Clara, Chicago, Philadelphia, Baltimore, United Kingdom, Valencia, Dubai, Beijing, Hyderabad, Bengaluru and Mumbai.

3. On Exotic Nanostructure for bio-FET Hiroshi Watanabe *, Andy Lee *, Ikuo Kurachi ** * Dept. Elec. & Comp. Eng., National Chiao Tung University ** High Energy Accelerator Research Organization Biosensor & Bioelectronics: Track 10-4 Electrochemical biosensors 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU3

4. Motivation Koike, et.al. 25μm long and 2.4mm wide Ta2O7 (6nm) : K=27 EOT=0.9nm EOT+1.8nm = 2.7nm ~ 2nm tailing N-Semi. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU4

5. Surface Charge SD Sensitive! Charge ʹ × ʹ.ʹ × ʹ. ʹ.ʹ. In-doped ZnO ʹ Hiroshi Watanabe, NCTU 8/13/2014 (San Antonio, TX)5

6. Surface Charge Sensitive? SD Charge ʹ × ʹ.ʹ × ʹ. ʹ.ʹ. ʹ Hiroshi Watanabe, NCTU 8/13/2014 (San Antonio, TX)6 In-doped ZnO

7. SNW Sensitive S Charge D n a n o w ire s a r e c o n f i g u re d. ʹ × ʹ.ʹ × ʹ. ʹ Hiroshi Watanabe, NCTU 8/13/2014 (San Antonio, TX)7

8. DS Get Around 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU8 Not Get Around Speed down SD

9. X: Target Y: Receptor Sense it!! X+ YX+ Y ⇆XYʹ.⇆XYʹ. ʹ 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU9

10. Limit Of Detection (LOD) ∆�∆� ௗ � = ∆== ∆= ௧ � 0 × + +�+� = �� �0 ������ − �௨ௗ�� �0 ������ − �௨ௗ — 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU10 X+ YX+ Y ⇆XY⇆XY M. A. Reed, IEDM2013-208 K: dissociation Const. Macroscopic

11. Independent Sense, ε ≔ � Sensitive! S Charge S/AS/AS/AS/A S/AS/AS/AS/AS/AS/AS/AS/AS/AS/AS/AS/A ʹ −2 − −2 − n a n o w ire s a r e c o n f i g u re d. ʹ × ʹ.ʹ × ʹ. = nanowires detected the charge by Human IgG. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU11

12. Independent Sense, ε ≔ � Gate Width (GW) = ʹ. Line (L), SNW ∅ = ͵ Space (S), SNW-to-SNW = = � + Rev. LOD = � × LOD 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU12 ε =.%;ε =.%; = = K= K 40 “/A’s detect the signal change.

13. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU13 SOI (  20nm) N-type ( ଶ 0− ଷ )

14. Line / Space by 30nm Tech. L=30nm S=30nm 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU14

15. Sliming = ͵ = 57nm 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU15

16. BL - De c oder SGS SGD CSL=0V SGS SGD SGS SGD SGS SGD SNW ( ~ um) S/AS/A S/AS/A S/AS/A S/AS/A VDD=1V 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU16 VDD=1V VDD=1VVDD=1V Y Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y Y Y Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y Y Y Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y Y Y Y Y Y Y YY YY Y Y Y YY Y Y Y Y YY YY Y Y Y Y N-type

17. nMOSFET SGS pMOSFET SGD S/AS/A CSL=0V VDD=1V Self-Heating Rhyner, IEDM13-790 15 XY Y Y Y Y YY YY Y Y Y YXY Y Y Y Y YY YY Y Y Y Y Semi. Nano-Wire (N-type) =.ͺ.ͺ − /ʹ− /ʹ +/ʹ+/ʹ X N-type BL - De c oder = += + � � | ln �ଶ�ଶ + ʹ�ʹ� ଶ + 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU

18. − /ʹ− /ʹ Modeling for Device Simulation Semi. Nano-Wire (N-type) Vd Id We may sense this change. N=0 N=2 +/ʹ+/ʹ 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU18

19. Electrically Floating Island How to determine the potential? Adopted ͞Capacitance͟ so far. ∆E=�∆E=� � = �� �0 ������ − �௨ௗ�� �0 ������ − �௨ௗ — How to know ͞Capacitance͟? 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU19

20. Electrically Floating Island DBL ≅ � Know the potential without ͞Capacitance͟. How to know ͞Capacitance͟? 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU20

21. Electrically Floating Island H. Watanabe, et. al., IEEE TED vol. 61, pp. 1145-1152, 2014. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU1919

22. Sim. Results 0 0.20.2 0.40.4 0.80.60.80.6 1 1.21.2 1.41.4 1.61.6 1.81.8 -6-4-202 N, stored in dot 46 EOT=2.0EOT=1.6EOT=1.4EOT=2.0EOT=1.6EOT=1.4 J elec  N  J elec  N  0    1-order reduction 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU2929 (nm)

23. On fabrication Tolerance Before exposed to solution Error Correction is easy. Wi d th f lu ctu a tion Too thin, too high resistivity program 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU23 program

24. 8/13/2014 (San Antonio, TX)Hiroshi Watanabe, NCTU24 By Thinking Exp. & Device Simulation 1.Independent Sense System 2.Powerful Error Correction 3.Optimization of bio-FETs Acknowledgement: The authors appreciate Prof. Koike (OIT) for helpful discussions.

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