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Published byKerrie Lewis Modified over 9 years ago
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Fixed Abrasive Design for Chemical Mechanical Polishing
SFR Workshop May 24, 2001 Edward Hwang, David Dornfeld Berkeley, CA 2001 GOAL: To build integrated CMP model for basic mechanical and chemical elements. Develop periodic grating metrology by 9/30/2001. 5/24/2001
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Content Micro-Fabrication Techniques for Fixed Abrasive for Chemical Mechanical Polishing (CMP) Control of Abrasive Shape Construction of Micro-Scale Wear Mode Diagram 5/24/2001
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Background Study & Examples
Fixed Abrasive – Cylindrical Shape Pad Conditioner – Random geometry Abrasive shape decides the wear mode 5/24/2001
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Standard Fabrication Process
Oxide Si Thermal Oxidation Uniform Pattern of Oxide Islands Silicon Etching Silicon Etching Process Determines Abrasive Shape 5/24/2001
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Oxidation Sharpening limitations of various abrasive shape with the etching process due to crystallographic structure of silicon Planar Oxidation Non-Planar Oxidation Anomaly of Silicon Oxidation at Regions of High Curvature due to Stress Configuration HF Etching Low Cost 5/24/2001
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Simulations with TSUPREM
Wet etching + 6 consecutive wet + 4 consecutive dry oxidations at 950 C for 2 ½ hour Dry etching + 6 consecutive dry oxidations at 950 C for 2 ½ hour Isotropic etching + 6 consecutive dry oxidations at 950 C for 2 ½ hour 2-step wet etching + 4 consecutive wet + 4 Consecutive dry oxidations at 950 C for 2 ½ hour 5/24/2001
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Scanned Images Dry Etching + Oxidation Wet Etching + Oxidation Oxidation process sharpens the abrasive and sharpened image depends on the precursor 5/24/2001
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Lift-Off Technique Additive Process Abrasive Shape
deposited material silicon dioxide silicon substrate silicon oxide thickness, the opening 5/24/2001
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2002 and 2003 Goals Third axis parameters to be determined Pin-on-disk set-up will be used to complete wear mode diagram Integrate initial chemical models into basic CMP model. Validate predicted pattern development by 9/30/2002. Develop comprehensive chemical and mechanical model. Perform experimental and metrological validation by 9/30/2003. 5/24/2001
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