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班 級:碩研電子二甲 姓 名:江宥辰 學 號: M9730208 授課教師:蔣富成
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1. Crystalline Quality 2. Current Spreading Effect 3. Discussion 4. Reference
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4.1x10 18 cm -3 Grown at 1168 C Grown at 500°C LT GaN grown time 130s LT Si:N grown time 350s 9 period grown at 835°C & In 0.3 Ga 0.7 N = 3.0 nm GaN= 13 nm Grown at 1020°C 3.8x10 17 cm -3 The process called : ”Interrupt Growth Procedure” Key Word : Interlayer, Dislocation Blocking Layer SiNx
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Dislocation density 1.1x10 8 cm -2 Dislocation density 1.4x10 7 cm -2 TD density reduction was due to the nitride film deposition, which may decrease the density of surface micro pits and release stress between the n-GaN film and the sapphire substrate.
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Grown at 560 ° C 3 period In 0.3 Ga 0.7 N = 2.5 nm GaN= 6.5 nm Electron Blocking Layer First Barrier 2x10 17 cm -3 Current Spreading Layer Electron Emission Layer
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3.6V3.3V Slope=Rs Rs LED1 >Rs LED2
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1.25 mW 2.6 mW
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Electron capture rate increase Relaxation induced defect generation & non-radiative recombination Hint : A large quantum well width can provide with a large electron capture rate, but the carrier confinement effect will decrease as the well width increase.
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1. Interlayer 是否會成為新趨勢。 2. InGaN Current Spreading Layer 具有類似 Buffer 作用, 可以減少 Dislocation 。 3. Silicon doped MQW 可以包含 Current Spreading Effect 與 Hole Blocking Layer ( 須搭配調變 In 和 Ga 元素 比例 ) 兩種作用。 4. (A). 良好的電流分佈 (B). 高品質的結晶 (C). 低電流阻 塞可以提升抗靜電能力。
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1. Hon KUAN, “High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes, ” Japanese Journal of Applied Physics Vol. 47, No. 3, 2008, pp. 1544–1546. 2. J. K. Sheu, G. C. Chi, and M. J. Jou, “Enhanced Multiquantum-Well Light-Emitting Diode Output Power in an InGaN–GaN With an InGaN Current-Spreading Layer, ” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 13, NO. 11, NOVEMBER 2001. 3. T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen, J. K. Sheu, and J. F. Chen, “InGaN/GaN Tunnel-Injection Blue Light-Emitting Diodes, ” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 49, NO. 6, JUNE 2002. 4. Yun-Li Li, Wei-Chih Lai and Yun-Chorng Chang, “Excess carrier dynamics of InGaN/GaN multiple-quantum-well light-emitting diodes with various silicon barrier doping profiles, ” APPLIED PHYSICS LETTERS 92, 152109 2008. 5. Eun-Hyun Park, David Nicol Hun Kang, Ian T. Ferguson, Soo-Kun Jeon, Joong-Seo Park and Tae- Kyung Yoo, “The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode, ” APPLIED PHYSICS LETTERS 90, 031102 2006. 6. I. Akasaki et al. J. Crystal Growth 98, 209 (1989). 7. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, Senior Member, IEEE, J. F. Chen, Member, IEEE, W. C. Lai, C. H. Kuo, C. H. Chen, and J. K. Sheu, “Influence of Si-Doping on the Characteristics of InGaN– GaN Multiple Quantum-Well Blue Light Emitting Diodes, ” IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 5, MAY 2002.
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