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EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507.

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Presentation on theme: "EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507."— Presentation transcript:

1 EE141 © Digital Integrated Circuits 2nd Devices 1 Lecture 5. CMOS Device (cont.) ECE 407/507

2 EE141 © Digital Integrated Circuits 2nd Devices 2 What is a Transistor? A Switch! |V GS | An MOS Transistor

3 EE141 © Digital Integrated Circuits 2nd Devices 3 NMOS and PMOS NMOS and PMOS

4 EE141 © Digital Integrated Circuits 2nd Devices 4 The MOS Transistor Polysilicon Aluminum

5 EE141 © Digital Integrated Circuits 2nd Devices 5 MOS Transistors - Types and Symbols D S G D S G G S DD S G NMOS Enhancement NMOS PMOS Depletion Enhancement B NMOS with Bulk Contact

6 EE141 © Digital Integrated Circuits 2nd Devices 6 Threshold Voltage: Concept

7 EE141 © Digital Integrated Circuits 2nd Devices 7 The Threshold Voltage

8 EE141 © Digital Integrated Circuits 2nd Devices 8 The Body Effect

9 EE141 © Digital Integrated Circuits 2nd Devices 9

10 EE141 © Digital Integrated Circuits 2nd Devices 10

11 EE141 © Digital Integrated Circuits 2nd Devices 11 Transistor in Linear

12 EE141 © Digital Integrated Circuits 2nd Devices 12 Transistor in Saturation Pinch-off

13 EE141 © Digital Integrated Circuits 2nd Devices 13

14 EE141 © Digital Integrated Circuits 2nd Devices 14

15 EE141 © Digital Integrated Circuits 2nd Devices 15

16 EE141 © Digital Integrated Circuits 2nd Devices 16 A model for manual analysis

17 EE141 © Digital Integrated Circuits 2nd Devices 17 Current-Voltage Relations The Deep-Submicron Era Linear Relationship -4 V DS (V) 00.511.522.5 0 0.5 1 1.5 2 2.5 x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V Early Saturation

18 EE141 © Digital Integrated Circuits 2nd Devices 18 Velocity Saturation  (V/µm)  c = 1.5  n ( m / s )  sat = 10 5 Constant mobility (slope = µ) Constant velocity

19 EE141 © Digital Integrated Circuits 2nd Devices 19 Perspective I D Long-channel device Short-channel device V DS V DSAT V GS - V T V GS = V DD

20 EE141 © Digital Integrated Circuits 2nd Devices 20 I D versus V GS 00.511.522.5 0 1 2 3 4 5 6 x 10 -4 V GS (V) I D (A) 00.511.522.5 0 0.5 1 1.5 2 2.5 x 10 -4 V GS (V) I D (A) quadratic linear Long Channel Short Channel

21 EE141 © Digital Integrated Circuits 2nd Devices 21 I D versus V DS -4 V DS (V) 00.511.522.5 0 0.5 1 1.5 2 2.5 x 10 I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V 00.511.522.5 0 1 2 3 4 5 6 x 10 -4 V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T Long ChannelShort Channel

22 EE141 © Digital Integrated Circuits 2nd Devices 22 A unified model for manual analysis S D G B

23 EE141 © Digital Integrated Circuits 2nd Devices 23 Simple Model versus SPICE V DS (V) I D (A) Velocity Saturated Linear Saturated V DSAT =V GT V DS =V DSAT V DS =V GT

24 EE141 © Digital Integrated Circuits 2nd Devices 24 A PMOS Transistor -2.5-2-1.5-0.50 -0.8 -0.6 -0.4 -0.2 0 x 10 -4 V DS (V) I D (A) Assume all variables negative! VGS = -1.0V VGS = -1.5V VGS = -2.0V VGS = -2.5V

25 EE141 © Digital Integrated Circuits 2nd Devices 25 Transistor Model for Manual Analysis

26 EE141 © Digital Integrated Circuits 2nd Devices 26 The Transistor as a Switch

27 EE141 © Digital Integrated Circuits 2nd Devices 27 The Transistor as a Switch

28 EE141 © Digital Integrated Circuits 2nd Devices 28 The Transistor as a Switch

29 EE141 © Digital Integrated Circuits 2nd Devices 29 The Sub-Micron MOS Transistor  Threshold Variations  Subthreshold Conduction  Parasitic Resistances

30 EE141 © Digital Integrated Circuits 2nd Devices 30 Threshold Variations V T L Long-channel threshold LowV DS threshold Threshold as a function of the length (for lowV DS ) Drain-induced barrier lowering (for lowL) V DS V T

31 EE141 © Digital Integrated Circuits 2nd Devices 31 Sub-Threshold Conduction 00.511.522.5 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 V GS (V) I D (A) VTVT Linear Exponential Quadratic Typical values for S: 60.. 100 mV/decade The Slope Factor S is  V GS for I D 2 / I D 1 =10

32 EE141 © Digital Integrated Circuits 2nd Devices 32 Sub-Threshold I D vs V GS V DS from 0 to 0.5V

33 EE141 © Digital Integrated Circuits 2nd Devices 33 Sub-Threshold I D vs V DS V GS from 0 to 0.3V

34 EE141 © Digital Integrated Circuits 2nd Devices 34 Summary of MOSFET Operating Regions  Strong Inversion V GS > V T  Linear (Resistive) V DS < V DSAT  Saturated (Constant Current) V DS  V DSAT  Weak Inversion (Sub-Threshold) V GS  V T  Exponential in V GS with linear V DS dependence

35 EE141 © Digital Integrated Circuits 2nd Devices 35 Parasitic Resistances

36 EE141 © Digital Integrated Circuits 2nd Devices 36 Latch-up

37 EE141 © Digital Integrated Circuits 2nd Devices 37 Future Perspectives 25 nm FINFET MOS transistor

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