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1 1.3 V low close-in phase noise NMOS LC-VCO with parallel PMOS transistors Moon, H.; Nam, I.; Electronics Letters Volume 44, Issue 11, May 22 2008 Page(s):676 - 678 Digital Object Identifier 10.1049/el:20080404 Electronics LettersIssue 11 Student : ming-long chuang Date:12/28/2009 National Changhua University Department of Graduate Institute of Integrated Circuit Design
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2 Outline Abstract INTRODUCTION Circuit design Experimental results Conclusion
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3 Abstract A new NMOS cross-coupled LC-VCO with parallel PMOS transistors is proposed. The proposed LC-VCO is useful for suppressing flicker noise up conversion and very suitable for low voltage application. It is implemented in 0.18 mm CMOS technology. Measured phase noise is -93 dBc/Hz at 100 kHz and -116 dBc/Hz at 1 MHz offsets and its core current is only 2 mA for a 1.3 V supply voltage..
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4 INTRODUCTION The 1/f^3-shaped phase noise close to the carrier in a CMOS LC VCO is dominated by flicker noise up conversion. The two major mechanisms are the 1/f noise in the tail current source transistor and the differential pair FETs. Recent reports have elaborated various techniques for suppressing the 1/f noise up conversion in CMOS LC oscillators.
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5 INTRODUCTION To suppress flicker noise up conversions from a bias transistor and a differential pair, we need to replace a bias transistor with a poly silicon resistor that has no 1/f noise. In addition, a decoupling capacitor can be used to obtain a negligible second- harmonic voltage at the source nodes as a source-coupled multi vibrator. Two inductors are needed to provide a high level of impedance without degrading the Q-factor of the LC tank.
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6 INTRODUCTION The complementary LC-VCO, which is used to exploit the symmetry of the oscillator circuit, is also useful because it can minimize the up conversion gain of low frequency noise. This Letter propose a new technique for suppressing flicker noise up conversion in an LC-VCO. It is viable for a low supply voltage because the stacked PMOS transistors are not required to maintain a symmetric waveform characteristic.
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7 Circuit design To improve the close-in phase noise characteristic of an NMOS LC-VCO, we focus on a differential pair. The flicker noise of the differential pair modulates the second-harmonic voltage waveform at its common-source node. To suppress the 1/f noise up conversion from differential pair transistors, we propose an NMOS LC-VCO structure with parallel PMOS transistors.
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8 Circuit design Schematic of proposed LC-VCO
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9 Circuit design Voltage waveforms at tail current-source node
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10 Circuit design Phase noise characteristics with ideal current source
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11 Circuit design Phase noise characteristics including 1/f noise of tail bias transistor
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12 Experimental results The proposed NMOS LC-VCO with parallel PMOS transistors was designed and fabricated in 0.18 mm CMOS process. To verify the performance of the proposed LC- VCO and to compare it with a conventional complementary LC-VCO, we implemented two LC-VCO under the same conditions, such as an LC tank and a bias current.
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13 Experimental results Chip photograph of proposed LC-VCO
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14 Experimental results Measured phase noise performance of proposed LC- VCO and complementary LC-VCO
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15 Conclusions The proposed NMOS LC-VCO with parallel PMOS transistors can reduce flicker noise up conversion from differential pair transistors and tail bias current transistors. The proposed LC-VCO is fabricated in 0.18 mm CMOS process, and has a low close-in phase noise performance and is very suitable for a low supply voltage.
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16 Thank you for your attention
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