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Magnetic Nanostructures F. J. Himpsel, Dept. of Physics, UW-Madison Limits of Data Storage Magnetoelectronics One-Dimensional Structures on Silicon SSSC Meeting, Irvine, Oct. 4, 2001
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All of the information... accumulated in all the books in the world can be written … in a cube of material 1/200 inch wide. Use 125 atoms to store one bit. Richard Feynman Caltech, December 29 th, 1959
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In pursuit of the ultimate storage medium 1 Atom per Bit
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Writing a Zero Before After
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Filling all Sites Natural Occupancy: 50% After Si Evaporation: 100%
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Smaller Bits Less Energy Stored Slower Readout Use Highly-Parallel Readout Array of Scanning Probes Array of Shift Registers ( Millipede, IBM Z rich ) ( nm m )
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50 nm 10 nm particle Magnetic Storage Media 17 Gbits/inch 2 commercial Hundreds of particles per bit Single particle per bit ! Magnetic Force Microscope Image (IBM)
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Perfect Magnetic Particles Sun, Murray, Weller, Folks, Moser, Science 287, 1989 (2000) FePt
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Giant Magnetoresistance: Spin-Polarized Tunneling: Magnetoelectronics Spin Currents instead of Charge Currents
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Filtering mechanisms Interface: Spin-dependent Reflectivity Quantum Well States Bulk: Spin-dependent Mean Free Path Magnetic Doping Parallel Spin Filters Resistance Low Opposing Spin Filters Resistance High GMR and Spin - Dependent Scattering
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Minority spins discrete, Majority spins continuous Spin-polarized Quantum Well States
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High Resolution Photoemission States near the Fermi level determine magneto-transport ( 3.5 kT = 90 meV ) Ni Energy Relative to E F [eV] 0.7 0.9 1.1 k || along [011] [Å -1 ]
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Magnetic Doping Magnetic Impurity Selects Spin Carrier Fe doped
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Why Silicon ? Couple Nano- to Microelectronics Utilize Silicon Technology Storage Media: 1 Particle (Atom) per Bit Atomically Precise Tracks Step Arrays as Templates: 2 - 80 nm 1 Kink in 20 000 Atoms Emulate Lithography: CaF 2 Masks Selective Deposition Atomic Wires: Exotic Electrons in 1D One-Dimensional Structures on Silicon
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Si(111) 7 7 Control the step spacing in units of 2.3 nm = 7 atom rows Step x - Derivative of the STM Topography “Illumination from the Left Casting Shadows”
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Stepped Silicon Template 1 Kink in 20 000 Atoms 15 nm
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Si(557) Regular Step Spacing 5.73 nm
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7 7 Unit + Triple Step Si(557) = 17 Atomic Rows
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Stepped Silicon Templates 80 nm15 nm6 nm triplesinglebunched Tobacco Mosaic Virus
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CaF 2 MaskSelective Adsorption DPP Molecule
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Selective Deposition via Photolysis of Ferrocene Troughs converted to Fe wires
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Clean Si(557) + Gold Decoration of Steps Atomic Wires 2 nm 6 nm
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Si(557) - Au
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Hole Holon + Spinon EFEF Photoelectron Spin - Charge Separation in a One-Dimensional Metal Zacher, Arrigoni, Hanke, and Schrieffer, PRB 57, 6379 (1998) Spinon Holon E F = Crossing at E F
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Si(557)-Au Splitting persists at E F Electron count is even Not spin charge separation E Fermi Two degenerate orbitals ? Bonding Antibonding E2E2 E1E1
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Tailoring the Electronic Structure Electron count even, two bands, metallic Electron count odd, one band, “gap” steppedflat
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Si(111) - Au http://uw.physics.wisc.edu/~himpsel
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