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EE121 John Wakerly Lecture #6

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1 EE121 John Wakerly Lecture #6
Adders Multipliers Read-Only Memories Barrel-Shifter Design Example

2 Equality Comparators 1-bit comparator 4-bit comparator EQ_L

3 8-bit Magnitude Comparator

4 Other conditions

5 Comparators in ABEL Equality checking PEQQ = ([P7..P0] == [Q7..Q0]);
PEQQ_L = !([P7..P0] == [Q7..Q0]); 16 product terms Magnitude comparison PGTQ = ([P7..P0] > [Q7..Q0]); PGTQ_L = !([P7..P0] > [Q7..Q0]); 255 product terms (try it in Foundation!)

6 Adders Basic building block is “full adder” Truth table:
1-bit-wide adder, produces sum and carry outputs Truth table: X Y Cin S Cout

7 Full-adder circuit

8 Ripple adder Speed limited by carry chain
Faster adders eliminate or limit carry chain 2-level AND-OR logic ==> 2n product terms 3 or 4 levels of logic, carry lookahead

9 74x283 4-bit adder Uses carry lookahead internally

10 “generate” “half sum” carry-in from previous stage “propagate”

11 Ripple carry between groups

12 Lookahead carry between groups

13 Addition in ABEL Easy? No -- huge number of product terms!
On the order of 2n for bit n @CARRY directive

14 Subtraction Subtraction is the same as addition of the two’s complement. The two’s complement is the bit-by-bit complement plus 1. Therefore, X – Y = X + Y + 1 . Complement Y inputs to adder, set Cin to 1. For a borrow, set Cin to 0.

15 Full subtractor = full adder, almost

16 Multipliers 8x8 multiplier

17 4x4 multiplier in ABEL

18 Full-adder array

19 Faster carry chain

20 Read-Only Memories

21 Why “ROM”? Program storage
Boot ROM for personal computers Complete application storage for embedded systems. Actually, a ROM is a combinational circuit, basically a truth-table lookup. Can perform any combinational logic function Address inputs = function inputs Data outputs = function outputs

22 Logic-in-ROM example

23 4x4 multiplier example

24 Internal ROM structure
PDP-11 boot ROM (64 words, 1024 diodes)

25 Two-dimensional decoding
?

26 Larger example, 32Kx8 ROM

27 Today’s ROMs 256K bytes, 1M byte, or larger Use MOS transistors

28 EEPROMs, Flash PROMs Programmable and erasable using floating-gate MOS transistors

29 Typical commercial EEPROMs

30 EEPROM programming Apply a higher voltage to force bit change
E.g., VPP = 12 V On-chip high-voltage “charge pump” in newer chips Erase bits Byte-byte Entire chip (“flash”) One block (typically 32K - 66K bytes) at a time Programming and erasing are a lot slower than reading (milliseconds vs. 10’s of nanoseconds)

31 Microprocessor EPROM application

32 ROM control and I/O signals

33 ROM timing

34 Next time Sequential circuits (Chapter 7)


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