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CMOS Circuit Design, Layout and Simulation
Sam Burke UCSB HEP Group UCSB HEP ASIC Class
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References Text CMOS Circuit Design, Layout, and Simulation by R. J. Baker, Li and Boyce IEEE Press Oct 2002 ISBN URL UCSB HEP ASIC Class
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The Well P Type Wafer Transistors Diode
boron acceptor atoms (25 ohm*cm) Transistors Nmos Transistors on p-substrate Pmos Transistors on n-well Diode formed between the n-well and p-substrate UCSB HEP ASIC Class
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Historical Methods Point Contacts Grown Junctions Alloy Junctions
1948 Grown Junctions 1950 Alloy Junctions 1952 Planar Technology or Junction Technology 1953 UCSB HEP ASIC Class
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A Little History UCSB HEP ASIC Class
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Patterning Start with clean bare wafer Grow Oxide Apply Resist
wet oxide dry oxide Apply Resist Photo-resist pattern Expose Develope Etch to remove oxide Ready for Diffusion UCSB HEP ASIC Class
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Growing an N-Well Donor Atom Diffusion N Well Resistivity
Donor valance=5 Phosphorus Si valance=4 N Well Resistivity 0.75 ohm*cm UCSB HEP ASIC Class
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The N-Well UCSB HEP ASIC Class
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The Well Resistor R=[p/t]*L/W R=Rsq*L/W For N-Well R=Resistance
p=resistivity R=Rsq*L/W Rsq=sheet resistance (ohm/square) For N-Well p=0.75ohm*cm t=3um L=100um W=10um R=2500*100/10=25kohms UCSB HEP ASIC Class
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Si Resistivity Experimental Data Ref: Grove, A.S “Physics and Tech - -
N-Type donor concentration shown for resistor example Ref: Grove, A.S “Physics and Tech - - UCSB HEP ASIC Class
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N-Well Cross Section UCSB HEP ASIC Class
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L-Edit Demo the creation of an N-Well using L-Edit Error checking
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Design Process UCSB HEP ASIC Class
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Well and Contacts N-Well contact on left Bulk contact on right metal1
active Bulk contact on right P Implant UCSB HEP ASIC Class
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PN Junction Depletion Carrier drift UCSB HEP ASIC Class
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PN Junction Voltage UCSB HEP ASIC Class
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Diode Junction Capacitance
UCSB HEP ASIC Class
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Diode V/I Equation UCSB HEP ASIC Class
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Forward Biased Diode UCSB HEP ASIC Class
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S-Edit UCSB HEP ASIC Class
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T-Spice UCSB HEP ASIC Class
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Net List of Diode Circuit
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Diode Storage Time UCSB HEP ASIC Class
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