1. 指導老師:林志明 學生:黃政德 系級:積體所研一
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 6, JUNE 2003
An InGaP–GaAs HBT MMIC Smart Power Amplifier for W-CDMA Mobile Handsets
Joon Hyung Kim, Ji Hoon Kim, Youn Sub Noh, Student Member, IEEE, and Chul Soon Park, Member, IEEE
指導老師:林志明
學生:黃政德
系級:積體所研一

2. Introduction 1
A conventional PA achieves its peak efficiency at the maximum output power.
As the output power level is reduced, the efficiency drastically drops.
New design for increasing the efficiency.

3. Introduction 2 Bias current control Bias voltage control
Dual-chain power amplifier:
P1dB=16dBm , 28dBm

4. Load line characteristics for the maximum output power

5. Architecture of the dual-chain MMIC power amplifier

6. Amplifier chain 1 is activated and chain 2 is disabled

7. Proposed linearizer schematics using reverse diode capacitance

8. Simulated gain compression and phase distortion of the power amplifier

9. Schematic circuit of the dual-chain MMIC power amplifier

10. Photograph of the dual-chain MMIC power amplifier

11. Measured power gain and S11 of the dual-chain MMIC power amplifier

12. Measured output power and dc average current

13. Measured dc current and power added efficiency

14. Measured gain and ACLR of the dual-chain MMIC power amplifier

15. Conclusion Propose a new structure of dual-chain power amplifier.
21% PAE and -33dBc ACLR at 16dBm output power (low).
40% PAE and -30dBc ACLR at 28dBm out power (high).

16. REFERENCES
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[2] J. H. Kim, J. H. Kim, Y. S. Noh, and C. S. Park, “A bias controlled HBT
MMIC power amplifier with improved PAE for PCS applications,” in
Proc. 3rd Int. Conf. Microwave and Millimeter Wave Technology, Aug.
2002, pp. 725–728.
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[5] Y. S. Noh, T. W. Lee, and C. S. Park, “Linearized high efficient HBT
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