1. M ask D esign T raining M ask D esign T raining Page 1 Quality Layout

2. M ask D esign T raining M ask D esign T raining Page 2 What is Quality Layout ? Quality Layout Consist Of These Elements :  Meet Circuit Performance Requirements  Minimize parasitic RC  Analog  Efficient Area Usage  Anticipate ECO changes  Prepare future process/optical shrink  Meet or beat allocated area  Manufacture-able Layout (DFM)  Debug-able Layout (DFD)  Probe & FIB  Fulfill Reliability Guidelines  Electro Migration & Self Heating  ESD

3. M ask D esign T raining M ask D esign T raining Page 3 OUTLINES  Engineering Layout Checklist Poly Guidelines Contact Guidelines Diffussion Guidelines Metal and Vias Guidelines Summary  Electromigration and Self Heating  Layout Review Checklist

4. M ask D esign T raining M ask D esign T raining Page 4 Poly Guidelines Polysilicons In general, poly has much higher resistance then metal and therefore much higher delay. Using poly as an interconnect level can be advantageously used to create very compacts layout. But, poly should never be used as interconnect when the capacitance is high.

5. M ask D esign T raining M ask D esign T raining Page 5 Gate driving  Gate driving  Gates should be driven from the middle so that long poly lines are minimized. This means they should be driven between the p’s and n’s not through them.

6. M ask D esign T raining M ask D esign T raining Page 6 Gate spacing  Gate Spacing  Stacked series gates should be minimally spaced at Yu apart. Parallel gates need a spacing of Xu between gates (i.e. series gates can be closer).

7. M ask D esign T raining M ask D esign T raining Page 7 No field poly in high speed path

8. M ask D esign T raining M ask D esign T raining Page 8

9. M ask D esign T raining M ask D esign T raining Page 9 Gate poly is worse, gate oxide is 10X then field oxide RC.

10. M ask D esign T raining M ask D esign T raining Page 10 Leg device is needed  There is a Design rule limitation on the poly length. The transistor performance is very sensitive to the gate width.

11. M ask D esign T raining M ask D esign T raining Page 11 No field poly to connect diffusion  Function of the IC may be jeopardized. EM (electromigration) rule is likely to be violated.  Significant performance impact.

12. M ask D esign T raining M ask D esign T raining Page 12 No bend gates  Even the process today allow bent gates and will not give any significant impact to the performance, the analysis tool make no provision for them.

13. M ask D esign T raining M ask D esign T raining Page 13 Contacts Guidelines  There are two kinds of contacts: partially covered and fully covered. Partially covered contacts cannot carry as much current as fully covered contacts.  Definitions Fully/Partially Covered: A fully covered contacts has at least 0.16u coverage on all sides. A partially covered contact has 0.0 metal coverage past the edge of the contact. This mean that during process, if the mask moves, the partially covered contact may not be covered all the way with metal. Fully/Partially Strapped: Strapping is a term indicating how many contacts connect the device to metal1. Fully strapped means that as many contact as will fit have been placed on the device. Partially strapped means that some of the contacts is missing.

14. M ask D esign T raining M ask D esign T raining Page 14 Strapping Guidelines  At least 40% of length with minimum-spaced fully-covered contacts.  At least 80% of length with minimum-spaced partially-covered contacts.  Do not break S/D strapping  Based on simulations of conductivity degradation  Static Timing Analysis tool assumes all junctions are fully strapped in its transistor models.

15. M ask D esign T raining M ask D esign T raining Page 15 Diffusion stretching  Only stretch VCC/VSS (not signal) diffusion to make room for signal routes.  Based on observation of the impact on diffusion loading on the output node  We don’t care about diffusion loading on the VCC/VSS

16. M ask D esign T raining M ask D esign T raining Page 16 Supply and Interleaving guideline  Connect signal diffusions inside and supplies outside  Signals are sensitive to diffusion loading, supplies are not  Typical diffusion loading area = 0.48fF/u2 periphery = 0.05fF/u

17. M ask D esign T raining M ask D esign T raining Page 17 Metal and Vias Guidelines  Ohm per square resistance P86X process Contact15.0 Via17.0 Via27.0 Via37.0 Via47.0 Via56.0 Poly16.10 Metal10.085 Metal20.062 Metal30.062 Metal40.062 Metal50.062 Metal60.020

18. M ask D esign T raining M ask D esign T raining Page 18  Metals Metal1 will be unusable for longer routes as refer to the chart of ohm/square. Metal1 is more resistive compared to others metal layer, therefore move to Metal2 as soon as possible when do a signal routing to minimize the RC delay.  Vias Vias are allowed to be stacked. Via stacking rules: 1. Via1 may stack on well, diff and poly and directly on top of contact. 2. Via2 may stack on contact and directly Via1 without constraint. 3. Via3 may stack on contact, Via1 and directly Via2 without constraint. 4. Via4 may stack on contact, Via1, Via2 and directly Via3 without constraint.

19. M ask D esign T raining M ask D esign T raining Page 19 BKM on metal routing Avoid Small Jog Segments (< 1x MDR width) - Small jog segments are defined as being less than 1X minimum design rule line width. - No small jog segments on diffusion, poly, metal1 – metal5. < 1X MDR Width Insufficient room for “Serifs and “Cutouts” Pinching Risk

20. M ask D esign T raining M ask D esign T raining Page 20 Small Jog Segment Recommendations 1X MDR Width 2X MDR Width 0.5X MDR Width 2X MDR Width Increase Jog Separation Distance Increase Jog Segment Size

21. M ask D esign T raining M ask D esign T raining Page 21 Minimize the Total Number of Jog Segments Fewer number of vertices to correct. Less pattern distortion risk.

22. M ask D esign T raining M ask D esign T raining Page 22 Better Undesirable Better Landing Pad Recommendations

23. M ask D esign T raining M ask D esign T raining Page 23 Layer changes / Jumpers  Layer Changes / Jumpers  Minimize the number of metal layer changes while routing a signal. –Metal layer changes are expensive in area. –Every extra via increases resistance quite a bit and impacts signal timing.  No Poly jumpers –Poly is very resistive What’s Wrong With This Layout ?

24. M ask D esign T raining M ask D esign T raining Page 24 Summary  Shareable Power/Ground  Ensure shareable power/ground at diffusion edges if possible.  Always connect to bigger supply (ie: metal2 with 2 vias width).  Well Taps & Substrate Taps  Have well taps connect to VDD or signal specified in schematic.  Have substrate taps connect to GND.  Shareable Nodes  Share nodes both internally and externally as much as possible. –Sharing nodes can reduce cell or block size/area. –Sharing nodes can reduce contacts, vias and metal layers used.  Help to improve circuit performance.  Not applicable for special circuit (ie: analog – matching layout).

25. M ask D esign T raining M ask D esign T raining Page 25  Metal Directions  Use consistent metal directions for M1, M2, and M3. Make sure that tracks are not blocked by using inconsistent directions. M1 and M3 vertical, M2 and M4 horizontal.  Routing Jogs / turning points  Avoid making unnecessary jogs in routing (i.e. if a wire can go straight it should). This will help performance and area.  Aligned the placement of connectors to signal to avoid creating unnecessary curves / corners.  Signal Width  Try to maintain uniform/even width for a signal.  Check with DE or layout lead on critical / HV signal width requirement.

26. M ask D esign T raining M ask D esign T raining Page 26 EM and SH

27. M ask D esign T raining M ask D esign T raining Page 27  EM definitions EM is a problem that occurs when current only moves in one direction and pulls the atoms of the metal along with it. This movement will eventually leave gaps in the meatl causing open circuits failures. It can also cause increase resistance especially in contact and Via’s causing a speed failure over time.  SH definitions SH or self heat is a problem that occurs when current is alternating or not just flowing in the same direction all the time. Whereas in EM the metal only moves in one direction, in SH the atoms move in one direction and then back again making a net movement of zero. The problem occurs when too much currents flows heating up the metal and causing it to deteriorate and increase the resistance.

28. M ask D esign T raining M ask D esign T raining Page 28 Layout checklist Items to checkStatus 1Half design rules to cell boundary 2Diffussion a. Minimize source/drain width b. Power source should be at both ends of the cell. c. Shared diffussion d. Diffussion height align 3Poly a. Poly gate driving in the middle b. No poly jumpers c. No poly bends d. P & N devices orientation are the same 4Contact a. Full strapping contact and centralized. b. At least two contact for each input/connection. 5Metal a. No notches b. No metal jogs c. Use uniform width of metal routing.

29. M ask D esign T raining M ask D esign T raining Page 29 6Labeling a. Label all the nodes as the schematic has and case-sensitive. b. All IO pins must have pin name. 7Power/Ground source a. Power/ground must directly connected from the main vcc/vss bus, insteads of connect from the wellTab or substrate tap.

30. M ask D esign T raining M ask D esign T raining Page 30 Q & A