1. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 o Bump Bonding Selex / INFN Roma, October, 30 th 2009 G. Darbo - INFN / Genova

2. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 2 Present ATLAS Pixel Detector ATLAS Pixel Module 1744 Modules x 16 FE-I3 chips 1468 Modules bumped by Alenia (now Selex)

3. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 3 ATLAS Pixel Detector ATLAS Pixel Detector: 3 Barrel Layers + 3 forward and backward disks. 1744 modules with 16 chips (27904 FE-I3 chips) – 1.7 m 2 of active area

4. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 4 ATLAS Pixel Pictures Bi-stave with 26 modules Layer2 half shell

5. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 5 ATLAS Upgrade Plans: IBL Add a new layer of Pixel inside the present three layers of the detector: 14 staves with 16 (or 32) double (single) chip modules. Prototype 2010, production 2011÷12 FE-I4 chip: ~2x2 cm, 250x50 µm pixel size 7.6mm 8mmactive 2.8mm FE-I3 74% active 16.8mm 20.2mm ~2mm ~200 μ m FE-I4 ~89% Chartered reticule (24 x 32) IBM reticule ~19 mm New FE-I4 Pixel size = 250 x 50 µm 2 Pixels = 80 x 336 Technology = 0.13µm Power = 0.5 W/cm 2 FE-I3

6. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 6 ATLAS sLHC Upgrade For sLHC ATLAS foresee a complete replacement of the inner detector: Replace the Pixel with a 4 or 5 pixel layers: 2 or 3 times the surface Technology Looking at is hybrid pixel detector (FE, sensor, bump-bonding) Large area requires reduce cost Single, double or 2x2 front-end modules Reduce material, make thin FE chip Time scale: Prototyping 2010÷2012 Production: 2013÷2014 (15)

7. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 7 Assemblies Two options: module with two FE-I4 (2x4 cm 2 ) for planar sensors or with single FE-I4 (2x2cm 2 ) for 3D sensors FE-I4 thickness: <350 µm (what is feasible? Prototyping with dummies) Planar sensors thickness: 200÷300 µm 3D sensor thickness: 230 ± 10 µm (are sensors with array of thin – 10 µm – columns, geometry similar to the FE-I3 tested assemblies) 3D sensor could come with support wafer bonded – how can be removed after bump-deposition?

8. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 8 Prototyping at Selex: our idea FE-I3 We would like to continue with a few sensor wafers (~5) to make bump deposition and single chip assemblies (exist FE-I3 with bumps at Selex) Dummies (toward FE-I4) We would like to make test of bump-bonding with dummy sensor and dummy FE-I4: use connectivity chain to test yield Pixel size 250µm x 50 µm – 80 x336 pixels (dummy FE-I4) – single and double assembly (dummy sensor) – 2 x 2 modules for sLHC later. Thickness: dummy sensor (230µm) – maybe 200µm dummy FE-I4: 350µm, 190 µm (as FE-I3), thinner? FE-I4 and Sensor prototyping On dummy results discuss prototyping (few tens of assemblies/modules) Possible IBL and sLHC production Considered on results, cost, production quantity, etc

9. Communications G. Darbo – INFN / Genova IBL MB#15, 5 October 2009 9 … what can be done by Selex? This is matter of discussion… Bump-bonding is assumed, but what else? Which thicknesses are feasible? Considering 3D “gruviera” sensors Support wafer removal? Dicing? What precision? ….