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Preparation of the Bi 12 SiO 20 thin films by the sol-gel method Š. Kunej, A. Veber and D. Suvorov Advanced Materials Jožef Stefan Institute.

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Presentation on theme: "Preparation of the Bi 12 SiO 20 thin films by the sol-gel method Š. Kunej, A. Veber and D. Suvorov Advanced Materials Jožef Stefan Institute."— Presentation transcript:

1 Preparation of the Bi 12 SiO 20 thin films by the sol-gel method Š. Kunej, A. Veber and D. Suvorov Advanced Materials Jožef Stefan Institute

2 Outline Introduction Aim of work Experimental Results Sapphire Si/SiO 2 /TiO 2 /Pt Spinel MgAl 2 O 4 Conclusions

3 Introduction SILLENITE MINITURIZATION THIN FILMS * M. Valant, D. Suvorov; J. Am. Ceram. Soc., 84[12], 2900-904, 2001 Ag Bi 12 SiO 20 “Bulk” Bi 12 SiO 20 * (5.5GHz):  ’ = 37.6 Qxf = 8100 GHz  f = -20 ppm/K T sint. = 850°C Microwave technology (LTCC)

4 Aim of work Preparing Bi 12 SiO 20 (BSO) thin films using sol-gel method Determining microstructure and thickness of BSO thin films deposited on substrates: –Sapphire –Si/SiO 2 /TiO 2 /Pt –Spinel MgAl 2 O 4

5 Experimental: SOL-GEL Synthesis Used chemicals: Bismuth (III) nitrate [Bi(NO 3 ) 3 ·5H 2 O] Tetraethly orthosilicate (TEOS) [Si(OC 2 H 5 ) 5 ] Acetic acid [CH 3 COOH] Ethanolamine [H 2 NCH 2 CH 2 OH] 2-ethoxyethanol [C 2 H 5 OCH 2 CH 2 OH] Vacuum drying 60°C/96h Bi(NO 3 ) Acetic acid + Ethanolamine Bismuth complex solution Sol Bi(NO 3 ) 3 ·5H 2 O Spin-coating Spin-coating (5000 rpm) Firing: 300-700°C/1h TEOS + 2-ethoxyethanol Analytical methods: XRD  SEM  AFM XRD  SEM  AFM Pyrolysis: 220°C/2min 4x

6 Results C / ( mol /l ) t / h 1.205 1.1248 0.98168 0.76456 0.67- Influence of solvent on gelation time :

7 Results: Sapphire Spin-coating: 4 x 5000 rpm Firing: 700°C/1h

8 Results: Sapphire d  400nm

9 Results: Si/SiO 2 /TiO 2 /Pt Spin-coating: 4 x 5000 rpm Firing: 700°C/1h

10 Results: Si/SiO 2 /TiO 2 /Pt d  230nm

11 Results: Spinel Spin-coating: 4 x 5000 rpm Firing: 700°C/1h

12 Results: Spinel d  300nm

13 Conclusions The Bi 12 SiO 20 (BSO) thin films were successfully prepared by the sol-gel method The BSO thin film obtained on sapphire substrate is porous with rough surface Homogeneous BSO thin film of thickness  230nm was obtained for the thin film deposited on Si/SiO 2 /TiO 2 /Pt substrate Thin film deposited on the spinel substrate shows homogeneous microstructure with grain size of 200-500nm. Future work: Optimization of BSO sol-gel precursor Obtaining “denser” BSO thin films Dielectric measurements of BSO thin films

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