1. ELECTRONICS DEVICE ELCTRONICS DEVICE
Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.
: Arief Udhiarto, M.T
Source : U.C. Berkeley

2. Schedule Lectures: K.301 Mon. 15:00-15.50 AM K.301 Wed. 13.00-14.50 AM
Electrical Engineering Department University of Indonesia

3. Relation to Other Courses
Prerequisite:
Simple pn-junction, BJT and MOSFET theory; BJT and MOSFET circuit applications.
Familiarity with the Bohr atomic model
Relation to other courses:
Electronics Circuit
Electrical Engineering Department University of Indonesia

4. Reading Material Primary Text : References Text:
Semiconductor Device Fundamentals : R. F. Pierret (Addison Wesley, 1996)
References Text:
Solid State Electronic Devices 4th Edition: B. G. Stretman, S. Banerjee (Prentice Hall, 2000)
Device Electronics for Integrated Circuits 3rd Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)
Electrical Engineering Department University of Indonesia

5. SAP 1. Course : Electronics Device
2. Course Code : EES SKS: 4 Semester: 3 3. Instructor : Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH) Arief Udhiarto, M.T (AU)
4. Class System : Single
5. Course’s Objective : mastering in basic concept of integrated circuit operation devices specially in silicon integrated circuits
6. Grading System (%) : Homework (10) , MT (35) ,
Seminar (15) , FT (40)
Electrical Engineering Department University of Indonesia

6. Miscellany Academic (dis)honesty Classroom etiquette:
Departmental policy will be strictly followed
Collaboration (not cheating!) is encouraged
Classroom etiquette:
Arrive in class on time!
Turn off cell phones, pagers, MP3/MP4 players, etc.
No distracting conversations
Ask question as much as possible
Electrical Engineering Department University of Indonesia

7. Pre Test What do you know about atom, electron, and hole?
What are the differences between conductor and semiconductor?
What is majority carrier related to semiconductor!
10 Minutes only
Electrical Engineering Department University of Indonesia

8. Course Outline PN-Junction Diode Semiconductor Fundamentals;
Metal-Semiconductor Contact
Bipolar Junction Transistor
IC Processing
(other subject)
MOSFET
Electrical Engineering Department University of Indonesia

9. Overview of IC Devices and Semiconductor Fundamentals
Reading Assignment : Pierret Chap 1, Chap 2
Electrical Engineering Department University of Indonesia

10. An IC consists of interconnected electronic components in a single piece ( chip ) of semiconductor material
In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects.
In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium.
Electrical Engineering Department University of Indonesia

11. Evolution of Bipolar Junction Transistors
Point Contact BJT 1947
SiGe BJT
2000
Si Nanowire BJT 2003
Electrical Engineering Department University of Indonesia

12. From a Few, to Billions
By connecting a large number of components, each performing simple operations, an IC that performs very complex tasks can be built.
The degree of integration has increased at an exponential pace over the past ~40 years.
The number of devices on a chip doubles every ~18 months, for the same price.
Electrical Engineering Department University of Indonesia

13. Electrical Engineering Department University of Indonesia

14. IC Technology Advancement
Improvements in IC performance and cost have been enabled by the steady miniaturization of the transistor
Electrical Engineering Department University of Indonesia

15. Advantages of Technology Scaling
• More dies per wafer, lower cost
• Higher-speed devices and circuits
Electrical Engineering Department University of Indonesia

16. Today and Tomorrow
Electrical Engineering Department University of Indonesia

17. The Nanometer Size Scale
Electrical Engineering Department University of Indonesia

18. State-of-the-art Transistor Size
1µm = 10-6m = 10-4 cm = 1000 nm
1 nm =10 Å
Electrical Engineering Department University of Indonesia

19. CZ Crystal Growth
Electrical Engineering Department University of Indonesia

20. Si Bulk Wafer Specifications Bulk Wafer Specifications
Electrical Engineering Department University of Indonesia

21. Purity of Device Grade Si
% (so-called “eleven nines” )
Maximum impurity allowed is equivalent to 1 mg of sugar dissolved in an Olympic-size swimming pool.
Electrical Engineering Department University of Indonesia

22. Flatness deviation and particle sizes
Dimensions are equivalent to 1/1000 of a baseball
placed inside a sports dome.
Electrical Engineering Department University of Indonesia

23. Crystallographic Planes
Electrical Engineering Department University of Indonesia

24. Miller Indices Crystallographic Notation
h: inverse x-intercept
k: inverse y-intercept
l: inverse z-intercept
(Intercept values are in multiples of the lattice constant;
h, k and l are reduced to 3 integers having the same ratio.)
Electrical Engineering Department University of Indonesia

25. Crystallographic Planes and Si Wafers
Silicon wafers are usually cut along the (100) plane with a flat or notch to orient the wafer during IC fabrication
Electrical Engineering Department University of Indonesia

26. Bulk Si Wafer to IC Chip
Electrical Engineering Department University of Indonesia

27. Bohr Model
Electrical Engineering Department University of Indonesia

28. Electrical Engineering Department University of Indonesia

29. Silicon Atom 1s, 2s, 2p orbitals filled by 10 electrons
4 nearest neighbors
unit cell length = 5.43Å
5 × 1022 atoms/cm3
The Si Atom
The Si Crystal
“diamond cubic ” structure
Electrical Engineering Department University of Indonesia

30. Conduction Band and Valence Band
Electron
Potential
Energy
Electrical Engineering Department University of Indonesia

31. The Simplified Energy Band Diagram
Electrical Engineering Department University of Indonesia

32. Semiconductors, Insulators, and Conductors
Totally filled band and totally empty bands do not allow current flow. (just as there is no motion of liquid in a totally filled or totally empty bottle
Metal conduction band is half-filled
Semiconductors have lower Eg’s than insulators and can be doped
Electrical Engineering Department University of Indonesia

33. Compound Semiconductors
“Zincblende Structure”
III-V compound semiconductors : GaAs, GaP, GaN, etc.
“important for optoelectronics and high speed ICs”
Electrical Engineering Department University of Indonesia

34. Density of States
Electrical Engineering Department University of Indonesia

35. Density of States at Conduction Band: The Greek Theater Analogy
Electrical Engineering Department University of Indonesia

36. Concept of a “hole” An unoccupied electronic state in
the valence band is called a “hole”
Treat as positively charge mobile particle in the semiconductors
Electrical Engineering Department University of Indonesia

37. Bond Model of Electrons and Holes
Electrical Engineering Department University of Indonesia

38. Electrons and Holes
Electrical Engineering Department University of Indonesia