1. V. Re 1 WP3 Microelectronics and interconnection technology AIDA kick-off meeting, February 18, 2011 Hans-Günther Moser - MPI Valerio Re - INFN

2. V. Re 2 WP3 participants Task 2 (3D interconnection): Participants: AGH-UST, CERN, CEA, CNRS (CPPM and IPHC), CSIC-CNM, UB, INFN, MPG-MPP, UBONN, STFC, UU Associates: IPASCR, NTUA, UNIGLA, UNILIV, FOM Task 3 (Shareable IP blocks for HEP): Participants: AGH-UST, CEA, CERN, CNRS (LAL and LPNHE) Associates: INFN-MI, INFN-PV and UBONN

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5. H.-G. Moser MPI Munich Valerio Re INFN Aim of the WP3 kick-off meeting The aim of this first meeting was to define a coherent program, and to start a selection process among the many options that are available for both 3D integration and IP blocks, obviously taking into account manpower and funding limitations. Some decisions have to be taken in a relatively early stage of the project (e.g., how to procure CMOS chips for 3D integration), others require to establish contacts with industry (for 3D interconnection steps), which is an important part of WP3. 5

6. H.-G. Moser MPI Munich Valerio Re INFN WP3.2: 3D interconnection The aim is to build a demonstrator of a 3D vertically integrated pixel sensor, which provides a tool to qualify the technologies that are involved in 3D integration and makes them accessible to the community. WP3 plans to follow a “via last ” approach to 3D integration to build a 2-layer device in heterogeneous technologies, where the two layers are fabricated independently, and TSVs (Through Silicon Vias) and interconnections are made as the last steps of the process. 6

7. H.-G. Moser MPI Munich Valerio Re INFN The WP3 3D demonstrator: combining a set of diverse technologies to build a 4-side buttable device Choice of interconnection technology (mechanical and electrical bonding) Choice of technology for TSV (Through-Silicon-Via) Choice of CMOS technology (0.13, 0.25, 0.35  m) and foundry, design of a readout chip Choice of sensor (CMOS sensors, high resistivity planar or “3D” pixels) Except probably for sensors, WP3 will likely pursue one option for each item, making a choice based on scientific interest, accessibility and available resources 7

8. H.-G. Moser MPI Munich Valerio Re INFN Sensors Possible Manufacturers/Institutes: CNM, FBK, MPP, VTT (made presentations at parallel session), Micron, Sintef, CMOS foundries Possible selection criteria: wafers size sensor thickness (thin) edgeless copper/tin layer (for eutectic bonding) Compatibility with advanced bonding technologies 8

9. H.-G. Moser MPI Munich Valerio Re INFN Sensors at WP3 parallel session: fully depleted, high resistivity pixels FBK (Trento, Italy) Planar pixels, full-”3D” pixels with slim edge; active edge sensors also being developed VTT (Finland) Edgeless detectors, R&D towards 4-side buttable devices (TSVs, flip-chip bonding) MPI-HLL (Munich) Thin pixel sensors with UBM (copper on Ti/W) IMB-CNM (Barcelona) Active edge, “3D“ pixels, bump bonding (UBM and bump growing) 9

10. H.-G. Moser MPI Munich Valerio Re INFN CMOS readout circuits for 3D integration Possible Manufacturers: IBM (via CERN),IBM (via MOSIS), Chartered (via Equipic), Tezzaron/Chartered 3D (via CMP/CMC/MOSIS), UMC, AMS (via EUROPRACTICE), others Possible selection criteria: CMOS technology node (350nm, 250nm, 130nm, 90nm…) Full wafer access (postprocessing for 3D interconnection) Yield Cost According to our milestones, we have to freeze the CMOS ASIC design by mid 2012. This is necessary to complete the program on 3D integration with a full qualification of the demonstrator and of the relevant technologies. 10

11. H.-G. Moser MPI Munich Valerio Re INFN An approach to 3D CMOS ASICs: the 3D-IC consortium 11 Presentation by G. Traversi (Univ. Bergamo): 3D integrated circuits with the Tezzaron/Global Foundries process This approach is followed by the 3D-IC consortium promoted by Fermilab and including several WP3 partners. It is a “via first” process, where TSVs are drilled at the foundry in the early stages of CMOS wafers processing. Very high density interconnections (< 10  m) are possible with this technique. 2-layer CMOS chips for pixel readout with many pixel-level interconnections

12. H.-G. Moser MPI Munich Valerio Re INFN CMOS ASICs: the AIDA-WP3 approach As an AIDA goal, we chose the option of qualifying a "via last" process (TSVs drilled outside the CMOS foundry, on fully processed CMOS wafers). This could meet the requirements of applications where need for the high-density TSVs of Tezzaron is not so stringent. In most of our applications, we might need TSVs only in peripheral regions corresponding to the bonding pad area. In this case, TSV pitch (several tens of  m) and number (several hundreds) are relatively low. 12

13. H.-G. Moser MPI Munich Valerio Re INFN How WP3 may get CMOS ASICs 13 This is a key issue, and was the focus of most of the discussion in the parallel session. Considering funding limitations, two strategies are possible: 1) Choose CMOS 130 nm (most pixel readout designs are presently done in this node) and share the costs of an engineering run (necessary to get full wafers) with other partners and/or projects. This could be organized by CERN. 2) Choose a less scaled technology, such as 350 nm. It would be nice to build a dedicated chip that is optimized for 3D integration; most likely, this should be an adaptation of an existing chip (restricting the choices of 130 nm foundries).

14. H.-G. Moser MPI Munich Valerio Re INFN Post processing and 3D interconnection Possible manufacturers: IZM Berlin, EMFT (ex IZM Munich), IMEC, LETI, VTT, T-Micro, Tezzaron, Ziptronix, others (with a large diversity of approaches) Possible Selection Criteria: post processing possibilities (via last) thinning via density Accessibility Cost 14

15. H.-G. Moser MPI Munich Valerio Re INFN 15 3D postprocessing at the WP3 parallel session MPI-HLL (Munich) A. Macchiolo: SLID interconnection technology and TSVs for the upgrade of the ATLAS pixel system Fraunhofer EMFT process:

16. H.-G. Moser MPI Munich Valerio Re INFN WP3 interaction with industry for 3D integration We agreed to concentrate on one supplier for the 3D processing, which is quite expensive. WP3 will organize a 1-day workshop with industries and research institutes which may provide 3D technology to our network. This will be an opportunity to discuss with them and understand how they can meet our needs. This will be the first step towards the choice of the 3D technology we will use for our demonstrator. 16

17. 16 february 2011 Gisèle Martin-Chassard - AIDA Kick off meeting 17 WP3-3 task (I) Shareable IP blocks for HEP Goal : provide 2 lots of IP blocks for the HEP needs with full documentation and laboratory tests Lead institutions : CERN + LAL Choose the best techno at best price (MPW center) Gather the different designs Send them to MPW center Provide efficient interface between designers and MPW center Centralize the documentation of blocks and test results Organize users meeting Other participant labs : AGHT-UST, IRFU, LPNHE Associated labs : INFN-Mi, INFN-Pv, U Bonn, others ?

18. 16 february 2011 Gisèle Martin-Chassard - AIDA Kick off meeting 18 WP3-3 task (II) 1 srt set of IP blocks (November 2012) : –managed by CERN –Technology : DSM CMOS (mostly 130nm, 65nm could be supported also); presentation by Marek Idzik (AGH-UST) on IBM 130nm blocks –electronics for trackers –Radiation hardness 2 nd set of IP blocks (September 2014): –Managed by LAL –Technology : SiGe 130nm, 180nm or 350 nm ? (IBM, AMS …) –MPW center : depend on techno (CMP, MOSIS …) –Electronics for calorimeters and TPCs : high dynamic range, need of precise capacitors and resistors, … –Blocks (for both sets): low noise and fast amplifiers, fast ADCs, TDC (100ps), Bandgap, Rad-tol memory, PLL, SEU resistant flipflop, high speed LVDS, DC-DC …

19. H.-G. Moser MPI Munich Valerio Re INFN Conclusions In this WP3 meeting, we made the first steps towards the technology choices that are needed to build our 3D demonstrator and to design IP blocks. The 3D integration of devices in heterogeneous technology may open up various solutions (e.g. CMOSreadout + high res. sensor, analogCMOS + digitalCMOS, CMOSsensor + digitalCMOS). We moved forward to create an effective network that will provide the community with know-how and access to 3D integration technologies for advanced pixel sensors, and to IP blocks for readout integrated circuits in a variety of detectors and applications. 19

20. Backup slides V. Re 20

21. V. Re 21 WP3 Tasks Task 1. Coordination and Communication To coordinate and schedule the execution of the WP tasks To monitor the work progress and inform the project management and the participants within the WP To follow-up the WP resource utilization To prepare the internal and Deliverable Reports Task 2. 3D Interconnection Creation and coordination of a framework to make 3D interconnection technology available for HEP detectors Organisation of dedicated fabrication of sensors and electronics optimized for 3D interconnection Construction of demonstrator detectors using 3D technology to access this technology Task 3. Shareable IP Blocks for HEP Creation and coordination of a framework for the design of low and medium complexity microelectronics libraries and blocks in advanced submicron technologies to be made available to the community of users in HEP Organization of the design and qualification of a set of blocks using selected and qualified technologies Distribution and documentation of the library of functional blocks Organisation of regular Microelectronics Users Group meetings to exchange information, plan and coordinate actions related to the creation of a shared library of macro blocks.