1. Brizon Inc www.brizon.net yuxinhu@brizon.net

2. Products: Microelectronic Application CMP Slurry additive CMP cleaning solutions Wafer storage buffer solution Smart Curable Products Flexible Screen Applications LED Applications High Temperature Resistance And low IR emission A pplications

3. Products for the Semiconductor Industry: BriteClean-0+ : CMP cleaning process BriteClean-1 : CMP cleaning process Improves post process surface cleanliness for particles and surface residues. Improves next layer of deposition Protects both metal and oxide surfaces Improves wafer rinseability BriteClean-ACP : Slurry Additives Stabilize Slurry and Improve CMP efficiency Reduce and/or Eliminate macro- and micro-scratches Improve uniformity of material removal

4. Background of Briteclean  Innovative Technology  Longer shelf life - over two years  Much easier control processes and environments  Much more efficient for the cleaning process  One process fit more applications  One Process with Briteclean(s) Can Clean all  Alumina  NiFeCo, Cu abrasives  CeO abrasives  Colloidal SiO 2  Et al

5. Components Non-ionic surfactants Mixed surfactanized metal inhibitors and antioxidant agents Additional metal inhibitors and antioxidant agent Chelating agent Particle removing agent

6. Hydrophilic Metal inhibitor head Aliphatic Hydrophobic tail Anti-oxidant Hydrophobic Head Ethoxylated Hydrophilic Tail + Briteclean-0+ Briteclean-1 Briteclean-0+:Briteclean-1 = 1:1 In 50X aqueous dilution Briteclean-0+:Briteclean-1 = 1:1 Bulk solution Phase separation

7. Microelectronic application - CMP Briteclean – 0+Briteclean - 1Briteclean-ACP Pre/Post Cleaning Process YES Slurry Additives YES Storage/Buffer NO YES Application Need to mix with BC-1 or BC-ACP Need to mix with BC-0+ Alone Usage 2% - 5% 1% - 4%

8. Examples of Application in Real Field FAB  Briteclean-0+ and Briteclean-1 Mixed: Ratio 1:1 in 1.0-2.0% aqueous media  Slurry applied: in MH837/MH834/MH814 (Cabot)  Pad applied: IC1000 (white pad --- Rodel/(Rohm Haas)) Sub IV (black pad --- Rodel (Rohm Haas))  Tool platforms Applied: 8" Mirra (Applied Materials); 8" Ebara (Ebara); 8" 6DS-SP(Strausbaugh)  Wafer: Cu, Ni/Fe, Low key and Al 2 O 3

9. Dramatic Yield Improvement Improved within (WIW) wafer uniformity by ~1X Enhanced Cleanliness Improved Surface Roughness (NiFe<1nm) No Additional Processes Needed Flexible conditions Environmental Friendly No corrosive, no high or very low pH

10. Layer X CMP Performance Comparison

11. Slurry only Slurry + Brizon products Comparing SEM images of Silicon wafer surface

12.  Slurry distribution on polishing pads is a critical factor to achieve better WIW uniformity  Adding Brizon products into CMP slurries, the slurry surface extension with IC series CMP pads was modified to a form a uniformed slurry layer across the whole wafer Principle of Slurry Additive for CMP Applications Wafer IC CMP Pad Slurry Feed

13. Surf-Clean Data For Competitor’s Clean Solution Alumina NiFe Pre-TreatmentPost-Treatment

14. Surf-Clean Data For Mixed BriteClean Solution Alumina NiFe Pre-TreatmentPost-Treatment

15. BriteClean mixed Solution AluminaNiFe Con-1-70-66 Con-2-22-340 Competitor's Cleaning Solution AluminaNiFe Con-1190280 Con-21571370 Different Slurry Cleanability BriteClean vs Competitor Particle Count

16. BriteClean mixed Solution AluminaNiFe Roller1024 Pencil-10-6 Competitor's Cleaning Solution AluminaNiFe Roller3182985 Pencil190280 Different Method Cleanability BriteClean vs Competitor Particle Counts

17. Competitor's Cleaning Solution Initial (Pre-) Post Cleaning (Post- Pre) Alumina Tool-14771445968 Tool-289130652174 NiFe Tool-3133528395 Tool-4500845345 BriteClean Mixture Cleaning Solution Initial (Pre-) Post Cleaning (Post- Pre) Alumina Tool-12592689 Tool-2692640-52 NiFe Tool-3675123-552 Tool-420778-129

18. Particle Count/Roughness vs Ration of BC-0/BC-1 On NiFe wafer

19. Principle of Cleaning Process for CMP Applications  SlurryDissolved/Dispersed into Advanced Nonionic Surfactants, Slurry Chemistry  Trace MetalsDispersed into Advanced Nonionic Surfactants  Metal IonsComplex to Chelate in the Cleaning System  Aggressive Corrosive Buffered by the Cleaning Solution High/Low pH

20. BriteClean Mixture Competitor’s Cleaning Solution Post CMP&Cleaning AFM images (Cu plated wafer)

21. Roughness is better, surface residues reduced BriteClean Mixture Average Roughness(N=3x3): Rms=0.29nm Competitor’s Cleaning Solution Average Roughness(N=3x3): Rms=0.34nm Post CMP&Cleaning AFM images (Cu plated wafer)

22. Customer Testing Platform BriteClean vs Competitor's  Full NiFe, Cu and Alumina  Particle Counts were measured by Tencor Surf scan  Various Cleaning Tools were used Including Mirra, SSEC, DNS

23. pH Changes vs the Ratio of BriteClean-0/BriteClean-1 pH 100% BriteClean-1 100% BriteClean-0 Diluted 50 times in DI H 2 O Recommended Application: Briteclean-0/Briteclean-1 = 1:1 Diluted to 2%-5% times with DI H 2 O

24. One customer requested application Store the wafer in DI water, but surface materials was etched, both metal and Oxide Designed BriteClean-ACP. Currently being used in customer’s production No etching on surface materials up to 6 hours in DI water No detailed data was provided by customer Wafer Storage Buffer Solution-ACP

25. Principle of Prevention Processing  Mono-layerPrevents Redeposition of on SurfaceAny Contamination and Prevents Any Oxidation  Hydrophobic/Hydrophilic Balanced of the Mono-layer Improved Rinsability

26. 26 Sensor dimension was designed for different usages. 4-point scheme minimizes contact resistance during probing Sensor Circuit Measurement

27. Sensitivity Measurement Trend Chart Brit Briteclean productsCompetitor’s products

28. A Plethora of Materials In Semiconductor Area Oxide, such as Al 2 O 3 Colloidal SiO 2 NiFeCo Cu, Al, W Polymers Ru Si Et al

29. Stabilize slurry and improve CMP efficiency Improve slurry uniformity across polishing pad Improve WIW uniformity Advantages of BriteClean as Slurry Additive

30. Advantages of BriteClean  Reduced particle counts Efficient cleaning process  Much improved surface roughness Surface protection  Much easier process Mixture system No need for any process changes

31. Advantages of BriteClean ACP Stabilizes slurry for more efficient CMP Protects against oxidation on metal wafer Improves next layer of deposition

32. Thanks ! www.brizon.net yuxinhu@brizon.net