1. Indium gallium nitride By Charles Ball MEEN 3344 October 15, 2008

2. Characteristics of Indium Gallium Nitride Semi Conductor Material high heat capacity mix of gallium nitride (GaN) and indium nitride (InN) Defect Rich

3. Band Gap Between Valence and Conduction bands. Electrons may jump from valence to conduction band if supplied with specific energy. This specific energy is unique for all materials. Conductor Band

4. Lab Discovery Semiconductor Indium Nitride band gap re-measured and found to be 0.7eV instead of 2.0eV. By Adjusting the composition %’s it can be tuned to any part of the electromagnetic spectrum.

5. Advantages / Disadvantages Disadvantages Difficult to dope to create p-type material Billions of defects per square centimeter. Advantages Low Band gap (o.7eV) Smooth gap-curve when adjusting alloy composition. Easily made into layers (very tolerant to mismatched lattice systems)

6. References http://en.wikipedia.org/wiki/Band_gap http://www.lbl.gov/Science-Articles/Archive/MSD-full-spectrum- solar-cell.html http://www.lbl.gov/Science-Articles/Archive/MSD-perfect-solar- cell-2.html http://en.wikipedia.org/wiki/Indium_gallium_nitride