1. 報告人 : 洪國慶

2. Outline INTRODUCTION EXPERIMENTAL DETAILS RESULTS AND DISCUSSION CONCLUSION REFERENCES 2

3. INTRODUCTION InGaN/GaN MQW structures have a low internal quantum efficiency due to the poor confinement of carriers by the small band offset between the InGaN well layer and the GaN barrier. A delta doping process has recently been shown to improve the internal quantum efficiency of a quantum dot laser by introducing a high carrier injection layer, lowering the transparency current density, increasing the modulation bandwidth of the QW laser,and improving the temperature- related stability of the QW laser in the optoelectronic performance. In this letter, we report on an investigation of the effect of Si delta doping of the GaN barrier of a MQW on the optical and electrical properties of a InGaN/GaN UV LED with an emission wavelength of 385 nm. 3