1. COMPACT SMALL-SIGNAL MODELLING OF MULTIPLE- GATE MOSFETs UP TO RF OPERATION Benjamin Iñiguez*, Antonio Lázaro*, Oana Moldovan*, Bogdan Nae* and Hamdy A. Hamid** *Department of Electronic Engineering, Universitat Rovira i Virgili, Tarragona, 43007 SPAIN. E-mail: benjamin.iniguez@urv.cat benjamin.iniguez@urv.cat **Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario, Canada

2. Summary of the work performed Compact quasi-static models for symmetrical and assymetrical Double-Gate (DG) MOSFETs, cylindrical Gate-All Around (GAA) MOSFETs derived from the solution of the 1-D Poisson’s equation, leading to a unified charge control model from which the expressions of current, charges and small-signal parameters are obtained. This charge control model can also be applied to FinFETs. Analytical models of the short-channel effects obtained by solving the 2D/3D Poisson equation with the assumption that the electrostatic potential can be written as the sum of the solution of the 1D Poisson’s equation (the dominant one) and a remaining 2D/3D solution obtained using adequate techniques. These short-channel effect models are incorporated into the general models The charge control model can account for quantum confinement by using a corrected oxide capacitance which depends on the inversion centroid position, written in terms of the inversion charge Extension of the models to the high frequency and noise analysis using the active transmission line approach, considering also the gate tunneling noise source. Both drift-diffusion and hydrodinamic transport were considered

3. Results Normalized CGD (a, c) and CGS (b, d) with respect to the gate voltage, for VDS=1V (a, b) and VDS=0.1V (c, d). Solid line: DESSIS-ISE simulations; Symbol line: analytical model. Undoped DG MOSFET Simulated fT versus gate length for FinFET (Wfin=10 nm, Hfin=30 nm, tox=1.5 nm, tbox=50 nm, Vds=1 V, Vgs-VTH=0.5V)