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Spin control by application of electric current and voltage in FeCo–MgO junctions by Yoshishige Suzuki, Hitoshi Kubota, Ashwin Tulapurkar, and Takayuki Nozaki Philosophical Transactions A Volume 369(1951):3658-3678 September 28, 2011 ©2011 by The Royal Society
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Typical structure of a magnetic tunnel junction (MTJ) nanopillar designed for spin-injection magnetization switching (SIMS) experiments. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Typical SIMS hysteresis loop obtained for a CoFeB/MgO/CoFeB MTJ. The junction area, free- layer thickness, resistance × area product and MR are 100×200 nm, 3 nm, 3 Ω μm2 and about 100 per cent, respectively. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Comparison of the magnetization processes driven by (a) spin-transfer torque and (b) external magnetic field, for in-plane magnetized nanopillars. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Schematic of a magnetic nanopillar consisting of two ferromagnetic layers separated by a barrier layer. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Schematic of the spin-torque diode effect: (a) negative current; (b) null current; and (c) positive current. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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(a) Measurement set-up for the spin-torque diode effect measurements. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Bias dependence of (a) the spin-transfer torque and (b) the field-like torque. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Schematic of the sample stack. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Thickness dependence of magnetic hysteresis curves of the ultrathin FeCo layer sandwiched between Au and MgO layers. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Magnetic hysteresis curves of a 0.58 nm thick FeCo layer, measured under various applied bias voltages. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Schematic of the voltage-induced magnetic anisotropy change. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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(a) Magnetic hysteresis curves of a 0.48 nm thick FeCo layer measured under bias voltages of ±200 V. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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Macro-spin model simulation of voltage-induced dynamic magnetization switching. Yoshishige Suzuki et al. Phil. Trans. R. Soc. A 2011;369:3658-3678 ©2011 by The Royal Society
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