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el el Band structure of cubic semiconductors (GaAs)

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Presentation on theme: "el el Band structure of cubic semiconductors (GaAs)"β€” Presentation transcript:

1 el el Band structure of cubic semiconductors (GaAs)
near the center of the Brillouin zone E el el s1-Ga 4-fold hh p3-As 6-fold hh lh lh 2-fold so With spin-orbit coupling included Atom Non-relativistic solid

2 Basics of k.p-theory for bulk
Problem: Band structure at k = 0 is known. How to determine for k-vectors near k = 0? 𝐸 𝑐 π’Œ , πœ“ 𝑐 π’Œ,𝒓 = ? 𝐻 π‘˜ = 𝒑+π’Œ π‘š 0 +𝑉(𝒓) Perturbation theory: V(r) periodic 𝐻 π’Œ=0 + ℏ π‘š 0 π’Œβˆ™π’‘+ ℏ 2 π‘˜ 2 2 π‘š 0 𝑒 π‘π‘˜ 𝒓 = 𝐸 𝑐 π’Œ 𝑒 π‘π‘˜ (𝒓) 𝐸 𝑐 π‘˜ β‰… 𝐸 𝑐 ℏ 2 π‘˜ 2 2 π‘š ℏ 2 π‘š 𝑛≠𝑐 𝑒 𝑐 0,𝒓 π’Œβˆ™π’‘ 𝑒 𝑛 0,𝒓 𝐸 𝑐 0 βˆ’ 𝐸 𝑛 = 𝐸 𝑐 ℏ 2 π‘˜ 2 2 π‘š 𝑐 βˆ—

3 k.p theory for bulk (cont'd)
ℏ 2 π‘š 𝑛≠𝑐 𝑒 𝑐 0,𝒓 π’Œβˆ™π’‘ 𝑒 𝑛 0,𝒓 𝐸 𝑐 0 βˆ’ 𝐸 𝑛 Advantage: main contribution from top val. bands Only 2 parameters determine mass: Very few parameters that can be calculated ab-initio or taken from experminent describe relevant electronic structure of bulk semiconductors Can be generalized for all bands near the energy gap:

4 k.p theory for bulk (cont'd)
ℏ 2 π‘š 𝑛≠𝑐 𝑒 𝑐 0,𝒓 π’Œβˆ™π’‘ 𝑒 𝑛 0,𝒓 𝐸 𝑐 0 βˆ’ 𝐸 𝑛 Advantage: main contribution from top val. bands

5 𝒑 2 2π‘š +𝑉 𝒓 +π‘ˆ(𝒓) πœ“ 𝒓 =πœ€πœ“ 𝒓 πœ“ 𝒓 = 𝐹 𝑛 𝒓 𝑒 𝑛0 𝒓
Envelope Function Theory: method of choice for electronic structure of mesoscopic devices Problem: How to solve efficiently... 𝒑 2 2π‘š +𝑉 𝒓 +π‘ˆ(𝒓) πœ“ 𝒓 =πœ€πœ“ 𝒓 Periodic potential of crystal: rapidly varying on atomic scale Non-periodic external potential: slowly varying on atomic scale Ansatz: Product wave function ... Envelope Function F πœ“ 𝒓 = 𝐹 𝑛 𝒓 𝑒 𝑛0 𝒓 x Periodic Bloch Function u Result: Envelope equation (1-band) builds on k.p-theory... 𝐸 𝑐 βˆ’π‘–π›» +π‘ˆ 𝒓 βˆ’πœ€ 𝐹 𝑛 𝒓 =0

6 𝐸 𝑐 βˆ’π‘–π›» βˆ’π‘’π‘ˆ 𝒓 𝐹 𝜈 𝒓 = 𝐸 𝜈 𝐹 𝜈 (𝒓)
Example for U(r): Doped Heterostructures + Ec (z) + + + + EF EF + + neutral donors + + + Ec Unstable Charge transfer Thermal equilibrium Resulting electrostatic potential follows from ... 𝐸 𝑐 βˆ’π‘–π›» βˆ’π‘’π‘ˆ 𝒓 𝐹 𝜈 𝒓 = 𝐸 𝜈 𝐹 𝜈 (𝒓) Fermi distribution function 𝛻 2 π‘ˆ 𝒓 = 4πœ‹π‘’ πœ€ 0 𝑁 𝐴 𝒓 βˆ’ 𝑁 𝐷 𝒓 βˆ’ 𝜈 𝑓 𝜈 𝐹 𝜈 𝒓 2 Self-consistent β€œSchrΓΆdinger-Poisson” problem

7 Quantization in heterostructures
cb Band edge discontinuities in heterostructures lead to quantized states Material A B A vb cb electron SchrΓΆdinger eq. (1-band): hole vb


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