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DIELECTRIC PROPERTIES OF ATiO3 CERAMICS ( A=Ca,Sr, Ba) SINTERED WITH 5 Mol. % OF LiF AND CaF2 L. Taïbi - Benziada ; Y. Sedkaoui Algeria AMOMEN ’2011, October 27 - 29 2011, Kenitra, MAROCCO
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SUMMARY INTRODUCTION EXPERIMENTAL PROCEDURES RESULTS AND DISCUSSION CONCLUSION
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INTRODUCTION
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INTEREST FOR MATERIALS Materials have always represented an essential aspect of Human Society. Nowadays, the Material became synonymous with Existence for any Industry. In new Technologies of informations and commu- nications, the Progress and Success are closely linked to the development of Advanced Ceramics with higher and higher performances but also with lower and lower factory cost to be competi- tive on the huge market of microelectronics.
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APPLICATIONS OF CERAMICS Conventional Ceramics Engineering Ceramics Microstructure
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ABO 3 RELATED MATERIALS Among these new technical ceramics, ABO 3 perovskites and their solid solid solutions are of great interest for the Microelectronic Industry. With the devices miniaturization, ATiO 3 ceramics became the key materials for the devevopment of smart systems with high level of intelligence. Up to now, the varied PZT have dominated the market of microelectronic components. However, the toxicity of Pb is a serious threat to human health and environment.
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APPLICATIONS OF ABO 3 PEROVSKITES Capacitors Sensors Resonators Piezoelectric actuators Pyroelectric infrared detectors Electro-optical modulators Computer memories... FRAMS
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T. Shiosaki, The recent progress in the research and development for ferroelectric memory in Japan (1997) FRAMS DRAMS HDD
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OBJECTIVES The sintering at low temperature of lead free ceramics related to ATiO 3 ( A = Ca, Sr, Ba ) with the aid of 5 mol. % of CaF 2 and LiF : 0.95 ATiO 3 + 0.05 CaF 2 + 0.05 LiF The investigation of the dielectric properties in the obtained samples.
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PROPERTIES OF ATiO3 CERAMICS ( A=Ca,Sr, Ba)
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Calcium Titanate CaTiO 3 Ferroelectric perovskite : T C ~ 105 K Phase Transitions Orthorhombic Tetragonal Cubic Orthorhombic Tetragonal Cubic Pbnm I4/mcm Pm3m Pbnm I4/mcm Pm3m Quantum Paraelectric Symmetry at room temperature Orthorhombic : Orthorhombic : a = 5.443 Å ; b = 7.653 Å ; c = 5.376 Å 1498 K1634 K
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Strontium Titanate SrTiO 3 Phase Transitions Orthorhombic Tetragonal Cubic Orthorhombic Tetragonal Cubic Resonance Frequencies f r1 = 3 x 10 12 Hz f r2 = 1.65 x 10 13 Hz f r1 = 3 x 10 12 Hz f r2 = 1.65 x 10 13 Hz Quantum Paraelectric or incipient ferroelectric Symmetry at 300 K Cubic ( Pm3m ) a = 3.905 Å Cubic ( Pm3m ) a = 3.905 Å 65 K110 K
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Barium Titanate BaTiO 3 Ferroelectric perovskite : T C ~ 393 K Phase Transitions Rhombohedral Orthorhombic Rhombohedral Orthorhombic R3m Amm2 R3m Amm2 Tetragonal Cubic Tetragonal Cubic P4mm Pm3m P4mm Pm3m Relaxation Frequency : f r ~ 500 MHz Symmetry at room temperature Tetragonal : a = 3.992 Å b = 4.036 Å 183 K268 K 393 K
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EXPERIMENTAL PROCEDURES
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SAMPLES PREPARATIONS (1) ACO 3, TiO 2, CaF 2 and LiF were pre- heated at 150 °C to eliminate moisture and to avoid any hydrolysis during the sintering process. Stoichiometric titanates ATiO 3 were then synthesized by calcination in air : ACO 3 + TiO 2 ATiO 3 + CO 2 ACO 3 + TiO 2 ATiO 3 + CO 2
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SAMPLES PREPARATIONS (2) Various chemical compositions were prepared and ground in ethanol : 0.95 ATiO 3 + 0.05 CaF 2 + 0.05 LiF The mixtures thus obtained were cold- pressed to pellets with a binder under a pressure of 100 MPa and sintered in air at 1000 °C for 2 h on zircona plates.
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ACO 3 +TiO 2 Grinding, Calcination ATiO 3 +CO 2 5 % ( CaF 2 +LiF ) Grinding Sintering 1000 °C, 2 h A 0.95 Ca 0.05 ( Ti 0.95 Li 0.05 )O 2.85 F 0.15
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METHODS OF INVESTIGATIONS The purity and the symmetry were checked by X- Ray diffraction on crushed ceramics at 300 K. The ceramic’s microstructures were observed by Scanning Electron Microscopy on fractured samples. Dielectric measurements were carried out as a function of temperature ( 100 K - 550 K ) and frequency ( 10 2 Hz - 4x10 6 Hz ).
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RESULTS AND DISCUSSION
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X-RAY DIFFRACTION The X-Ray peaks of CTO oxyfluoride are indexed in an orthorhombic cell. The XRD peaks of fluorinated STO are indexed in an orthorhombic multiple cell. The parameters of the orthorhombic cell are related to that of STO : a o ~ (2) 1/2 a c ; b o ~ 4 a c ; c o ~ (2) 1/2 a c a o ~ (2) 1/2 a c ; b o ~ 4 a c ; c o ~ (2) 1/2 a c The XRD peaks of BTO oxyfluoride are indexed in a cubic cell.
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Unit Cell Parameters
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SEM OBSERVATIONS The micrograhs of A(Ti,Li)(O,F) 3 ceramics are monophasic. ATiO 3 ceramics are very brittle ( ΔΦ/Φ < 3 % ) and porous whereas the fluoridated ceramics are compact and very hard ( 13 % ΔΦ/Φ 22 % ). The fluoride mixture CaF 2 + LiF plays a double role: - as substituant and - as sintering agent.
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Micrographs of CaTiO 3 and CaTi 0.95 Li 0.05 O 2.85 F 0.15 CaTiO 3 = 2.1 % CaTi 0.95 Li 0.05 O 2.85 F 0.75 = 21.9 %
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Micrographs of SrTiO 3 and Sr 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 Sr 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.85 = 18.7 % SrTiO 3 = 1.1 %
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Micrograph of Ba 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 Ba 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.85 = 13.5 %
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DIELECTRIC PROPERTIES OF A(Ti,Li)(O,F) 3 CERAMICS
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ε' r T (K) 10 2 Hz 5x10 2 Hz 10 3 Hz 5x10 3 Hz 10 4 Hz 5x10 4 Hz 10 5 Hz 2x10 5 Hz Temperature dependence of ε’ r for CaTi 0.95 Li 0.05 O 2.85 F 0.15 ceramic A phase transition is detected around 283 K. The quantum paraelectric behaviour of CaTiO 3 disappears.
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ε" r T (K) 10 2 Hz 5x10 2 Hz 10 3 Hz 5x10 3 Hz 10 4 Hz 5x10 4 Hz 10 5 Hz 2x10 5 Hz Temperature dependence of ε’’ r for CaTi 0.95 Li 0.05 O 2.85 F 0.15 ceramic ε" r exhibits a frequency dependent peak around 283 K. Below 250 K, the frequency dispersion is negligible
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Frequency dependence of ε’ r and ε’’ r for CaTi 0.95 Li 0.05 O 2.85 F 0.15 ceramic The real permittivity ε’ r is nearly constant (~80 ). In the opposite, the imaginary component ε" r exhibits a broad minimum 4.5 MHz In the opposite, the imaginary component ε" r exhibits a broad minimum at 4.5 MHz.
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10 2 Hz 5x10 2 Hz 10 3 Hz 5x10 3 Hz 10 4 Hz 5x10 4 Hz 10 5 Hz 2x10 5 Hz Temperature dependence of ε’ r for Sr 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic Contrariwise to CTO, the quantum paraelectric behaviour of STO still persists. No phase transition is detected.
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Temperature dependence of ε’’ r for Sr 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic 10 2 Hz 5x10 2 Hz 10 3 Hz 5x10 3 Hz 10 4 Hz 5x10 4 Hz 10 5 Hz 2x10 5 Hz The increase in ε' r and ε" r beyond 400 K is ascribed to the conductivity of lithium ion Li +. The increase in ε' r and ε" r beyond 400 K is ascribed to the electrical conductivity of lithium ion Li +.
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Frequency dependence of ε’ r and ε’’ r for Sr 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic at 300 K The real permittivity ε’ r is practically constant (~180 ). In the opposite, the imaginary component ε" r exhibits a broad minimum 5.6 MHz In the opposite, the imaginary component ε" r exhibits a broad minimum at 5.6 MHz.
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Temperature dependence of ε’ r for Ba 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic A diffuse phase transition is depicted at the ferroelectric Curie T c ~ 293 K. A diffuse phase transition is depicted at the ferroelectric Curie temperature T c ~ 293 K.
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Temperature dependence of tanδ for Ba 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic The permittivity broad peak associated to a minimum of the losses. The permittivity broad peak is associated to a minimum of the losses.
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Frequency dependence of ε’ r and ε’’ r for Ba 0.95 Ca 0.05 Ti 0.95 Li 0.05 O 2.85 F 0.15 ceramic at 300 K 4000 2 5 6 7 8 log f (Hz) ε' r ε" r 3000 2000 1000 The complex permittivity exhibits a dielectric relaxation around 10 MHz.
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CONCLUSION
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ATiO3 ceramics ( A = Ca, Sr, Ba ) were sintered at low temperature with the aid of 5 mol.% of LiF+CaF 2 The oxyfluoride deriving from CTO exhibits a peak of ε‘ r and ε" r around 283 K. For STO, no phase transition is detected in the temperature range investigated. The ceramic related to BTO displays a ferroelectric transition at T C ~ 293 K and a dielectric relaxation about 10 MHz. These ceramics could be of interest for electronic applications and especially for capacitors manufacturing with a low factory cost.
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TYPE I CAPACITORS Pararaelectric dielectrics ’ r (293K) : 6 à 300 tan (293K) < 3.10 -3 (stable with frequency ) ’ r = f(T): relatively stable tan = f(T) : relatively stable ’ r (T) - ’ r (293K) (- 3000 to +300 ppm / °C) ’ r (293K) Aging: negligible
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NORMS OF TYPE II CLASS Z5U CAPACITORS Ferroelectric dielectric 5000 ’ r (293K) 9000 ’ r (T) - ’ r (293K) / ’ r (293K) = +22 % at 283 K. ’ r (T) - ’ r (293K) / ’ r (293K) = - 56 % at 358 K. tan < 2.5 %.
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THANK YOU FOR YOUR ATTENTION
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