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SMALL-SIGNAL HYBRID-Π EQUIVALENT CIRCUIT
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Content BJT – Small Signal Amplifier BJT complete Hybrid equivalent circuit BJT approximate Hybrid model Objectives Develop the small-signal models of transistor that are used in analysis of linear amplifier.
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Basic knowledge.. Ohm’s Law Kirchoff’s Law Thevenin and Norton’s Theorem All electronic circuit analysis require these for mathematical manipulation.
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Small signal hybrid- equivalent circuit of bipolar transistor Need to develop a small-signal equivalent cct -- use hybrid- model because is closely related to the physic of transistor. Treat transistor as two-port network.
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2-port system AC analysis require simplification of transistors as 2-port system. Simplification leads to new parameters / definitions.
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2-port system cont.. ‘Single ended’ 2-port system has 1 input port shorted to 1 output port. Alternative view =>system has a common input/output port. Three terminal device device which only three connection leads, i.e transistor falls into this category.
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Single-ended 2-port network
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Differential 2-port network The ‘differential 2-port’ network will be the basis for forthcoming analysis of all types of transistors (BJT and FET).
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Port variables 2-port network analysis is all about current and voltage by breaking down voltage direction (-ve to +ve or +ve to –ve) and current direction (to or from). Each current and voltage has 2 possible directions.
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2-port variables Below are the equations for BJT’s derived from 2-port network simplification.
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Small signal hybrid-π equivalent circuit Based on 2-port network, 1 input port and 1 output port shorted together to form a common port of both input and output. Transistor has input and output ports shorted (emitter) resulting a small-signal 2-port hybrid- π network.
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Cont.. Figure shows i B vs. v BE with small-time varying signal superimposed at Q-pt. Since sinusoidal signals are small, the slope at Q-pt treated as a constant, has units of conductance. The inverse of this conductance is small-signal resistance, r π
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Cont.. We can relate small-signal input base current to small-signal input voltage by: Finding r π from Q-point slope lead to: r π also known as diffusion resistance and is a function of Q-point parameters.
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Cont.. Now, we consider the output terminal characteristic of BJT. Assume o/p collector current is independent of collector-emitter voltage collector-current is a function of base-emitter voltage, so the equation: From eq 5.2 in Chapter 5 Neaman,
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Cont.. After substitution and rearrange the above, we obtain: The term ICQ / VT is a conductance. Since this term relates current in collector to a voltage in B-E circuit, it is called transconductance and is written: Transconductance also a function of Q-pt parameters and directly proportional to dc bias current.
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Cont.. Using these new parameters develop a simplified small-signal hybrid-π equivalent cct for npn BJT. Phasor components given in parentheses. This circuit can be inserted into ac equivalent circuit shown previously.
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Small-signal hybrid- equivalent circuit using transconductance Transconductance parameter g m =I CQ /V T r =V T /I CQ
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Cont.. We can relate small-signal collector current to small-signal base current for o/p of equivalent cct. Where β is called ac common-emitter current gain. Thus:
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Current gain parameter Small-signal hybrid- equivalent circuit using common-emitter current gain
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Small-signal circuit parameters
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Small-signal voltage gain Combine BJT equivalent cct to ac equivalent cct.
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Small-signal voltage gain Voltage gain, A v = ratio of o/p voltage to i/p voltage. Small-signal B-E voltage is called control voltage, V be or V . The dependent current source is g m V flows through R C produce –ve C-E voltage at the output.
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Cont.. From the input portion of the circuit: The small-signal voltage gain is:
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Example 1 Given : = 100, V CC = 12V V BE = 0.7V, R C = 6k, V T =0.026V, R B = 50k and V BB = 1.2V Calculate the small-signal voltage gain.
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Solutions 1. 2. 3. 4. 5. 6.
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Example 2 Given V CC =5V, V BB =2V, R B =650kΩ, R C =15kΩ, β=100 and V BE(on) =0.7V. Determine a) Q-points, b) g m and r c) voltage gain.
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Early effect Early Voltage (V A )
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Early voltage Figure above show current-voltage characteristic for constant values of B-E voltage. The curves are linear with respect to C-E voltage in forward-active mode. The slope is due to base-width modulation effect Early Effect. When the curves extrapolated at zero current, they meet a point on –ve voltage axis, v ce = -V A. V A --- Early voltage with typical value in range of 50 < V A < 300V.
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Hybrid-π equivalent circuit with Early Effect Early Effect => collector current, i C is dependent to collector-emitter voltage, v CE (refer Chapter 5- Neaman): The output resistance, r O : Substitute and rearrange both equation,
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Cont.. Hence, small-signal transistor output resistance, r O become: r O is equivalent to Norton resistance r O is parallel with dependent current sources.
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Modified bipolar equivalent circuits including r O due to Early Effect. Transconductance parameter Current gain parameter r o =V A /I CQ
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Self study for pnp transistor From Neaman textbook, Ac equivalent circuit – pg 386 Transconductance and current gain – pg 386 & 387 Small-signal hybrid-π equivalent circuit – pg 387 Do example 6.3
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Expanded hybrid-π equivalent circuit Include 2 additional resistance, r b and r μ. r b series resistance of semiconductor material. Since r b << r μ., r b is neglected (short cct) at low freq. r μ reverse-biased diffusion resistance of B-C junction. Typically in megaohms and neglected (open cct). Normally, in hybrid-π model, we neglect both r b and r μ.
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Other small-signal parameters -h parameter h-parameter -> relate small-signal terminal currents and voltages of 2-port network. The linear r/ship between terminal currents and voltages are: Where: i for input r for reverse f for forward o for output e for common-emitter
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h-parameter These equations represent KVL at input and KCL at output applied to h-parameter model for common-emitter BJT.
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h-parameter in relation to hybrid-π
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