1. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process תהליך CMOS פרופ ’ יוסי שחם המחלקה לאלקטרוניקה פיזיקלית אוניברסיטת תל - אביב ( לפי ההרצאות של יאן ראבאי מברקלי )

2. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process הכנת הפרוסות והליתוגרפיה הבסיסית

3. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process תהליך CMOS

4. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process דוגמה - מהפך CMOS This two-inverter circuit (of Figure 3.25 in the text) will be manufactured in a twin-well process.

5. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process Layout - תרשים

6. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process תהליך הייצור http://tanqueray.eecs.berkeley.edu/~ehab/inv.html. התצוגה מבוססת על התכנית SIMPL של פרופ’ אנדי ניורייטר מאוניברסיטת ברקלי. אינפורמציה מלאה נמצאת באתר:

7. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process התחלה Starting wafer: n-type with doping level = 10 13 /cm 3 * Cross-sections will be shown along vertical line A-A’ A A’

8. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process הגדרת ה - WELL (1) Oxidize wafer (2) Deposit silicon nitride (3) Deposit photoresist

9. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process בניית ה - WELL (4) Expose resist using n-well mask

10. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process בניית ה - WELL (5) Develop resist (6) Etch nitride and (7) Grow thick oxide

11. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process בניית ה - WELL מסוג N (8) Implant n-dopants (phosphorus) (up to 1.5  m deep)

12. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process בניית ה - WELL מסוג P Repeat previous steps

13. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process חמצון השער 0.055  m thin

14. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process תחמוצת השדה Uses Active Area mask Is followed by threshold-adjusting implants 0.9  m thick

15. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process פוליסיליקון

16. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process השתלת יונים לצמתות

17. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process השתלת יונים לצמתות

18. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process פתיחת חורים (1) Deposit inter-level dielectric (SiO 2 ) — 0.75  m (2) Define contact opening using contact mask

19. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process מתכת 1 - אלומיניום Aluminum evaporated (0.8  m thick) followed by other metal layers and glass

20. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process מבנה מתכת מתקדם יותר

21. Digital Integrated Circuits Adapted from EECS 141 copyright UCB 1996 Manufacturing Process הקר בין התרשים למציאות