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Chapter 2 Semiconductor Materials and Process Chemicals
半導體製程 材料科學與工程研究所 張翼 教授
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Figure 2.1 Bohr atom model.
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Figure 2.2 Periodic table of elements.
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Figure 2.3 Atomic structures of hydrogen, lithium, and sodium.
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Figure 2.4 The three best electrical conductors.
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Figure 2.5 Resistance of rectangular bar.
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Figure 2.6 Semiconductor materials.
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Figure 2. 7 Silicon resistivity versus doping (carrier) concentration
Figure 2.7 Silicon resistivity versus doping (carrier) concentration. (After Thurber et al. Natl. Bur Standards Spec. Publ , May 1981, tables 10 and 14.)
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Figure 2.8 N-type doping of silicon with arsenic.
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Figure 2.9 P-type doping of silicon with boron.
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Figure 2.10 Electron conduction in N-type semiconductor material.
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Figure 2.11 Hole conduction in P-type semiconductor material.
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Figure 2.12 Electrical classification of materials.
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Figure 2.13 Characteristics of doped semiconductors.
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Figure 2.14 Physical properties of semiconductor materials.
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Figure 2.15 Diagram of wafer molecule.
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Figure 2.16 Four states of nature.
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Figure 2.17 Temperature scales.
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Figure 2.18 Pressure vacuum measurement.
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Figure 2.19 Acid and base solutions.
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Figure 2.20 pH scale.
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Si (S) + 3HCl (g) → SiH Cl3 (e) + H2
SiO2 + C → Si + CO2 Purity Grade 98% ℃ Si (S) + 3HCl (g) → SiH Cl3 (e) + H2 SiHCl3 + H2 → Si + 3HCl Purity Grade %
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Silicon purification reactions
SiO2 + C → Si + CO2 Purity Grade 98% ℃ Si (S) + 3HCl (g) → SiH Cl3 (g) + H2 SiHCl3 + H2 → Si + 3HCl Purity Grade %
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Wafer cutting and polishing from the ingot
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