1. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO 4Mb Serial F-RAM New Product Introduction Cypress Introduces the Industry’s First 4Mb Serial F-RAM New Product Introduction: 4Mb Serial F-RAM™

2. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO The Global TAM 2 forecast for NVRAMs is $590M in 2014 with a 10% CAGR through 2018 3 Cypress’s 4Mb F-RAM serves many high-growth NVRAM markets, including: Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters The mission-critical systems used in these high-growth markets must reliably capture and store large amounts of data on power loss These systems require high-density, high-reliability, high-endurance and energy-efficient NVRAMs Alternative nonvolatile memories, such as EEPROM and MRAM, cannot match F-RAM performance Mission-critical systems require high-density NVRAMs with superior reliability, endurance and energy efficiency NVRAM 1 : Rapid Growth, Broad Markets 3a 4Mb Serial F-RAM New Product Introduction Serial F-RAM 1 A nonvolatile memory (NVM) that allows direct access to stored data in any random order 2 Total available market 3 Source: Web-Feet Research

3. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Cypress Is the NVRAM Market Leader 3b Cypress offers the largest portfolio of serial and parallel NVRAM products F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance 1 F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V SPI and I 2 C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages F-RAM products offer optional real-time clocks and event counters Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products 25 ns access times are available with unlimited Write Endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage Asynchronous x8, x16, x32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages Integrated real-time clocks are also available on nvSRAM products Cypress: Was the first to produce F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Provides products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 4Mb Serial F-RAM New Product Introduction 1 The number of times an NVM cell can be rewritten before it wears out

4. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Serial Nonvolatile Memory Terms Nonvolatile Memory (NVM) Memory that retains its information on power loss Nonvolatile Random Access Memory (NVRAM) NVM that allows direct access to stored data in any random order Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data Nonvolatile Static Random-Access Memory (nvSRAM) Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss Magnetoresistive Random Access Memory (MRAM) An NVRAM that uses the magnetism of electron spin to store data Page Write A write to a fixed-length contiguous block of memory Soak Time The approximate 10 ms required for a 2Mb EEPROM to complete a Page Write after the data is presented at the input buffers Write Endurance The number of times an NVM cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached 4 4Mb Serial F-RAM New Product Introduction NVM Hierarchy NVM NVRAM nvSRAMF-RAM EEPROM MRAM

5. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Serial NVM Design Problems 1. Many electronic devices must reliably capture and store large amounts of data in NVM on power loss EEPROMs are only available up to 2Mb in density 2Mb EEPROMs require a 10-ms continuation of active power per Page Write for Soak Time Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields 2. Many data-logging applications exceed EEPROM’s 1-million write-cycle limitation Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost 3. Systems using EEPROM and MRAM consume excess active power For the 10 ms required for 2Mb EEPROM Soak Time per Page Write For the processing required to do EEPROM Wear Leveling For the very high active and sleep currents consumed by MRAM Cypress’s serial F-RAM solves these problems Offers densities up to 4Mb Eliminates Soak Time and the need for additional capacitors or batteries to complete a Page Write on power loss Protects data with radiation- and magnetic field-tolerant F-RAM memory cells Provides 100 trillion write cycles (31,710 years at 10-ms write frequency), eliminating the need for Wear Leveling Consumes 2x to 5x less active power than EEPROM and 45x less active power than MRAM Cypress’s high-reliability 4Mb F-RAM offers 100 million times the endurance of EEPROM and consumes less active power than EEPROM and MRAM 5 4Mb Serial F-RAM New Product Introduction

6. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Serial F-RAM Is a Better Solution Additional capacitor to maintain power for 10 ms per Page Write for Soak Time Simplify a conventional, complex, EEPROM-based design… F-RAM pin-for-pin replacement for EEPROM SOIC8 By choosing F-RAM as your serial NVM solution… To produce better solutions for multiple applications at a lower cost, especially for mission-critical applications. 6 Multifunction Printers Industrial Controls and Automation Medical Wearables Test and Measurement Equipment Smart Meters File System Memory Controller Worn Cell 4x EEPROM capacity for Wear Leveling Wear Leveling software algorithm to increase EEPROM Write Endurance 4Mb Serial F-RAM New Product Introduction 8 x 2Mb for a 4Mb System

7. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Feature F-RAM CY15B104Q F-RAM MB85RS2MT 1 MRAM MR20H40 EEPROM M95M02 2 Density 4Mb2Mb4Mb2Mb SPI Speed 40 MHz25 MHz50 MHz5 MHz Sleep Mode Current 8 µA10 µA40 µAN/A Soak Time 0 ms 10 ms Endurance (Cycles) 10 14 10 13 Unlimited1.2 x 10 6 Lifetime @ 10-ms Write Frequency 3 31,710 years3,171 yearsUnlimited208 minutes Active Write Current 4 0.6 mA2.2 mA27.1 mA3 mA Nonvolatile Retention 100 years10 years20 years200 years Magnetic Damage Risk No Yes 5 No 1 2Mb Fujitsu serial F-RAM; Fujitsu does not offer 4Mb serial F-RAM 2 2Mb ST serial EEPROM; ST does not offer 4Mb serial EEPROM 3 Comparable write frequency limited by EEPROM’s Soak Time 4 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, -40°C to +85°C 5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids Cypress 4Mb Serial NVRAM vs. Competition’s 7 4Mb Serial F-RAM New Product Introduction

8. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO SPI F-RAMI 2 C F-RAM Processor Companion Wireless Memory Parallel F-RAM F-RAM Portfolio Low Power | High Endurance FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind 1 FM1808B 256Kb; 5.0 V 70 ns; x8; Ind 1 Wireless Memory NDA Required Contact Sales FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind 1, Auto E 3 FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind 1, Auto E 3 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind 1, Auto E 3 FM25V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 40 MHz SPI; Ind 1, Auto A 2 FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind 1, Auto A 2 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind 1, Auto A 2 FM25H20/V20 2Mb; H20: 2.7-3.6 V V20: 2.0-3.6 V 40 MHz SPI; Ind 1 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind 1, Auto A 2 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 1 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 1 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I 2 C; Ind 1, Auto E 3 FM24V02/W256 256Kb; V02: 2.0-3.6 V W256: 2.7-5.5 V 3.4 MHz I 2 C; Ind 1, Auto A 2 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 1 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 1 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I 2 C; Ind 1, Auto A 2 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHz I 2 C; Ind 1 ; RTC 4 ; Power Fail; Watchdog; Counter FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHz I 2 C; Ind 1 ; RTC 4 ; Power Fail; Watchdog; Counter FM33256 256Kb; 3.3V; 16 MHz SPI Ind 1 ; RTC 4 ; Power Fail Watchdog; Counter 4Kb - 256Kb 512Kb - 8Mb 1 Industrial grade −40ºC to +85ºC 2 AEC-Q100 −40ºC to +85ºC 3 AEC-Q100 −40ºC to +125ºC FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind 1 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind 1 CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind 1 FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind 1 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind 1 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind 1 4 Real-time clock ProductionDevelopment QQYY Availability Sampling Concept Status CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A 2 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A 2 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E 3 NEW 10a

9. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO nvSRAM Portfolio High Density | High Speed 64Kb - 256Kb 512Kb - 16Mb 1 Industrial grade −40ºC to +85ºC 2 Real-time clock 3 Open NAND flash interface Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM Parallel nvSRAMSPI nvSRAM I 2 C nvSRAM CY14B116K/L 16Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B116R/S 16Mb; 3.0 V 25, 45 ns; x32; Ind 1 RTC 2 CY14V116F/G 16Mb; 3.0, 1.8 V I/O 30 ns; ONFI 3 1.0 x8, x16; Ind 1 CY14B116M/N 16Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B108K/L 8Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B104K/LA 4Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14B101KA/LA 1Mb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V101LA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B256KA/LA 256Kb; 3.0 V 25, 45 ns; x8; Ind 1 RTC 2 CY14V/U256LA 256Kb; 3.0, 1.8V I/O 35 ns; x8; Ind 1 CY14B108M/N 8Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14B104M/NA 4Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14E256LA 256Kb; 5.0 V 25, 45 ns; x8; Ind 1 CY14V104LA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x8; Ind 1 CY14B101MA/NA 1Mb; 3.0 V 25, 45 ns; x16; Ind 1 RTC 2 CY14V101NA 1Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14V104NA 4Mb; 3.0, 1.8 V I/O 25, 45 ns; x16; Ind 1 CY14B064P 64Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B256P 256Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B512P 512Kb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B101P 1Mb; 3.0 V 40 MHz SPI; Ind 1 RTC 2 CY14B064I 64Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B256I 256Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B512I 512Kb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 CY14B101I 1Mb; 3.0 V 3.4 MHz I 2 C; Ind 1 RTC 2 STK11C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK12C68-5 64Kb; 5.0 V 35, 55 ns; x8; Mil 4 STK14C88-5 256Kb; 5.0 V 35, 45 ns; x8; Mil 4 4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface 6 Double Data Rate CY14V101QS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 CY14V101PS 1Mb; 3.0, 1.8 V I/O 108 MHz QSPI 5 ; Ind 1 Ext. Ind 7 ; RTC 2 Higher Densities QSPI 5 nvSRAM NDA Required Contact Sales Higher Densities DDRx 6 nvSRAM NDA Required Contact Sales ProductionDevelopment QQYY Availability Sampling Concept Status NEW 7 Extended Industrial grade −40ºC to +105ºC 10b

10. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO 4Mb SPI Serial F-RAM Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters Applications Features Preliminary Datasheet: Contact SalesContact Sales Collateral Block Diagram Sampling: Q2 2015 Production:Q4 2015 Availability F-RAM Array Data I/O Register Status Register Address Register Instruction Register Control Logic Serial Input 40-MHz SPI interface 100-trillion read/write cycle endurance Operating voltage range: 2.0-3.6 V Low (8-µA) sleep current 100-year data retention Industrial temperature operation Packages: 8-pin TDFN, 8-pin SOIC 4Mb SPI Serial F-RAM Control Serial Output 4 11 4Mb Serial F-RAM New Product Introduction

11. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Here’s How to Get Started 1.Download the SPI Guide for F-RAMSPI Guide for F-RAM 2.Register to access online technical support: www.cypress.comwww.cypress.com 3.Request a preliminary datasheet: Contact SalesContact Sales 12 Smart E-Meter by Landis + Gyr Motor Control by SEW Multifunction Printer by Ricoh 4Mb Serial F-RAM New Product Introduction

12. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO APPENDIX 15 4Mb Serial F-RAM New Product Introduction

13. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO 4Mb F-RAM Part NumberDensityInterfaceFrequency Min. Supply Voltage Max. Supply VoltageTempPackage CY15B104Q-SXI4MbSPI40 MHz2.0 V3.6 V-40 to 85°C8-SOIC CY15B104Q-LHXI4MbSPI40 MHz2.0 V3.6 V-40 to 85°C8-DFN 4Mb F-RAM Product Selector Guide 16 CY 15 B 104 Q – XX X I Serial F-RAM Part Numbering Decoder Temperature Range: I = Industrial Package: S = 8-SOIC, LH = 8-DFN Interface: Q = SPI Density: 104 = 4Mb Marketing Code: 15 = F-RAM Company ID: CY = Cypress Voltage: B = 2.0 to 3.6 V Pb Content: X = Pb-free 4Mb Serial F-RAM New Product Introduction

14. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO References and Links Cypress Nonvolatile Products website: www.cypress.com/nonvolatilewww.cypress.com/nonvolatile The source for all of our publicly available nonvolatile product documentation and collateral Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM RoadmapCypress Nonvolatile RAM Roadmap Datasheets and NDA roadmap requests: Cypress Sales Representative or email cypressfram@cypress.comCypress Sales Representativecypressfram@cypress.com Application Notes: Nonvolatile Products Application NotesNonvolatile Products Application Notes Knowledge Base Articles: Nonvolatile Products Knowledge Base ArticlesNonvolatile Products Knowledge Base Articles 18 4Mb Serial F-RAM New Product Introduction

15. 001-92370 Owner: MRAN Rev *D Tech lead: EWOO Competitor EEPROM: (8x) ST M95M02 2Mb Price: (8 x $2.16): $17.28 1 BOM Integration 10-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.39 1 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 100,000 units Value Added: $0.50 $17.28 $0.39 $0.50 $18.17 Competitor Capacitor for 10-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 32% Total Savings: CY15B104Q-SXI $12.32 2 $5.85 1 Digikey website 1ku pricing on 02/24/2015 2 Future 1ku Cypress website pricing on 02/24/2015 19 4Mb Serial F-RAM Solution Value 4Mb Serial F-RAM New Product Introduction