1. 001-90292Owner: RHOE Rev **Tech lead: EWOO NVRAM Product Overview New Product Presentation NVRAM Product Overview Cypress Provides the Industry’s Fastest and Most Energy-Efficient Nonvolatile RAM Solutions

2. 001-90292Owner: RHOE Rev **Tech lead: EWOO Cypress Is the NVRAM Market Leader 2 Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory products F-RAM™, the industry’s most energy-efficient serial NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100,000,000 times the endurance Densities range from 4Kb to 2Mb, and voltages range from 2.0 V to 5.5 V SPI and I 2 C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM products Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance Densities range from 64Kb to 16Mb with 3.0 V and 5.0 V supply voltages and 1.8 V I/O voltages Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options Integrated real-time clocks are also available on nvSRAM products Cypress: Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience Continues to invest heavily in new products Is committed to providing products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Cypress offers the industry’s fastest, most-energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data NVRAM Product Overview New Product Presentation

3. 001-90292Owner: RHOE Rev **Tech lead: EWOO Serial Nonvolatile Memory Terms Nonvolatile Memory (NVM) Memory that retains its information on power loss Nonvolatile Random Access Memory (NVRAM) A Nonvolatile Memory that allows direct access to stored data in any random order Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy Nonvolatile Memory that uses ferroelectric technology to store data Electrically Erasable Programmable Read-Only Memory (EEPROM) A common Nonvolatile Memory that uses floating-gate technology to store data Page Write A write to a fixed-length contiguous block of memory Soak Time The 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers Write Endurance The number of times a Nonvolatile Memory cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached AEC-Q100 A quality and reliability standard for automotive applications defined by the Automotive Electronics Council 3 NVRAM Product Overview New Product Presentation

4. 001-90292Owner: RHOE Rev **Tech lead: EWOO Serial NVM Design Problems 1. Many electronic devices must reliably store system data in Nonvolatile Memory after power loss EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time Soak Time requires additional capacitors or batteries for a Page Write on power loss, which adds cost and reduces reliability Mission-critical data may be subject to radiation and/or magnetic fields 2. Many data-logging applications exceed the 1 million write-cycle limitation of EEPROM Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan Wear Leveling requires up to 8x the memory capacity and additional software, which increases cost 3. Systems using EEPROM have increased system power consumption For the 5 ms required for EEPROM Soak Time For the processing required to do Wear Leveling F-RAM solves these problems Requires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss Provides 100 trillion write cycles, eliminating the need for Wear Leveling Consumes 2x to 5x less active power than EEPROM, thereby reducing system power F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields Cypress F-RAM offers 100,000,000 times the endurance of EEPROM at 30% of the power 4 NVRAM Product Overview New Product Presentation

5. 001-90292Owner: RHOE Rev **Tech lead: EWOO Serial F-RAM Is a Better Solution Additional capacitor to maintain power for 5 ms per Page Write for Soak Time Simplify a conventional, complex, EEPROM-based design… F-RAM pin-to-pin replacement for EEPROM SOIC8 By choosing F-RAM as your serial Nonvolatile Memory solution… To produce better solutions for multiple applications at a lower cost, especially for mission-critical applications. 5 Automotive Electronics Industrial Controls Smart Meters Multifunction Printers Medical Devices File System Memory Controller Worn Cell 8x EEPROM capacity for Wear Leveling 2 x 256Kb for a 64Kb System Wear Leveling software algorithm to increase EEPROM Write Endurance NVRAM Product Overview New Product Presentation

6. 001-90292Owner: RHOE Rev **Tech lead: EWOO Feature F-RAM EEPROMNOR Flash SPI Speed 40 MHz33 MHz20 MHz50 MHz I 2 C Speed 3.4 MHz1 MHz N/A Write Delay 0 ms 5 ms50 ms Endurance (Cycles) 10 14 10 12 10 6 10 5 Active Write Current 1 3 mA6 mA10 mA15 mA Density Range 4Kb - 2Mb 1Kb - 1Mb4Mb - 512Mb Nonvolatile Retention 100 years10 years100 years20 years 1 Conditions: Max current, SPI, 10 MHz to 40 MHz, 2.7 to 3.3 V, −40° C to +85° C Cypress Serial NVRAM vs. Competition’s 6 NVRAM Product Overview New Product Presentation

7. 001-90292Owner: RHOE Rev **Tech lead: EWOO Here’s How to Get Started 1.Select Cypress serial F-RAM products in the F-RAM Product Selector Table and click “Order” for free samplesF-RAM Product Selector Table 2.Download the SPI Guide for F-RAMSPI Guide for F-RAM 3.Register to access online technical support: www.cypress.comwww.cypress.com 7 Digital Hearing Aids by Oticon Infotainment System by Hyundai Smart E-Meter by Landis + Gyr Motor Control by SEW Multifunction Printer by Ricoh Automotive Safety System by Hyundai NVRAM Product Overview New Product Presentation

8. 001-90292Owner: RHOE Rev **Tech lead: EWOO Parallel Nonvolatile Memory Terms Nonvolatile Memory (NVM) Memory that retains data on power loss Nonvolatile Random Access Memory (NVRAM) A Nonvolatile Memory that allows direct access to stored data in any random order Write Endurance The number of times a Nonvolatile Memory cell can be rewritten before it wears out Silicon Oxide Nitride Oxide Silicon (SONOS) An insulating charge-storage layer in a transistor used to create a Nonvolatile Memory storage cell Nonvolatile Static Random Access Memory (nvSRAM) Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss Battery-Backed SRAM (BBSRAM) SRAM memory connected to a lithium battery to retain data on power loss Restriction of Hazardous Substances (RoHS) A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components Redundant Array of Independent Disks (RAID) A storage technology that uses two or more disk drives for redundancy or increased performance 8 NVRAM Product Overview New Product Presentation

9. 001-90292Owner: RHOE Rev **Tech lead: EWOO 1. Many systems require fast Nonvolatile Memories with high Write Endurance Traditional EEPROM or Flash Nonvolatile Memories have slow write times (> 1 ms) and limited Write Endurance Low-power asynchronous SRAMs have ~45 ns access times but require battery backup to store data on power loss 2. Batteries increase cost, add design complexity, and compromise reliability and RoHS compliance Batteries, power-management circuits and firmware add cost and complexity, and reduce reliability Coin cell batteries have a limited lifetime, which mandates periodic system maintenance and downtime Data is lost if battery charge is drained before the system power is restored, which mandates fast time-to-repair Batteries contain heavy metals and violate RoHS compliance nvSRAM solves these problems Provides 20 ns read/write SRAM access time with unlimited endurance Requires no batteries to retain data on power loss for unlimited periods Stores data reliably at power loss without the need for external power-management circuits and firmware Complies with RoHS requirements Parallel NVM Design Problems 9 Cypress RoHS-compliant nvSRAMs are significantly faster than traditional Nonvolatile Memories, and more reliable and easier to implement than BBSRAM solutions NVRAM Product Overview New Product Presentation

10. 001-90292Owner: RHOE Rev **Tech lead: EWOO Parallel nvSRAM Is a Better Solution Battery-free parallel nvSRAM solution By choosing nvSRAM as your parallel Nonvolatile Memory solution… To produce more reliable solutions for mission-critical applications at a lower cost. Battery required to retain data on power loss 10 Extra board area for battery Standard SRAM memory Simplify a complex BBSRAM-based design… RAID Storage Industrial Automation Computing and Networking Avionics and Defense Electronic Gaming NVRAM Product Overview New Product Presentation

11. 001-90292Owner: RHOE Rev **Tech lead: EWOO 1 Low-power 16Mb asynchronous SRAM 2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 35 ns (MRAM), 2.7 to 3.6 V, −40° C to +85° C FeaturenvSRAM Asynchronous SRAM 1 + Battery MRAM Access Time 20 ns45 ns35 ns Write Delay 0 ms Battery Requirement NoYesNo Endurance (Cycles) Unlimited Active Write Current 2 75 mA50 mA180 mA Density Range 256Kb - 16Mb64Kb - 64Mb256Kb - 16Mb RoHS Compliant YesNoYes Nonvolatile Retention 20 yearsN/A20 years Magnetic Damage Risk No Yes CY Parallel NVRAM vs. Competition’s 11 NVRAM Product Overview New Product Presentation

12. 001-90292Owner: RHOE Rev **Tech lead: EWOO Here’s How to Get Started 1.Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table and click “Order” for free samplesnvSRAM Product Selector Table 2.Download the App Note: A Comparison Between nvSRAMs and BBSRAMsA Comparison Between nvSRAMs and BBSRAMs 3.Register to access online technical support: Cypress.comCypress.com 12 Programmable Logic Controller by Siemens Slot Machine by IGT Router by Cisco Avionics Subsystem by Rockwell Collins RAID Card by LSI NVRAM Product Overview New Product Presentation