1. Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique E.Gaubas, T.Čeponis, J.Kusakovskij, A.Uleckas, S.Sakalauskas, and J.Vaitkus Vilnius University, Institute of Applied Research, Vilnius, Lithuania (VU) Outline  Motivation for alternative techniques vs. impedance based frequency domain one  Principles of Barrier Evaluation by Linearily Increasing Voltage (BELIV) technique  Fluence dependent BELIV characteristics  Temperature dependent BELIV characteristics for reverse-biased diodes  Detector- barrier evaluation summary  Photo-conductivity gain in heavily irradiated full-depleted detectors  Summary

2. Applicable only when diode can be emulated by the linear elements U ac << kT/e C P  C S (U R )  C b0 (1+U/U bi ) -1/2 C b0 =(eN D  0 S 2 /2eU bi ) 1/2 slope C -2 vs U  N D ; intersect. U bi -U F =0  U bi U bi =(kT/e)ln(N Ap+ N D /n i 2 ) at least U ac /U Rdc <<1` Motivation for alternative techniques vs. impedance based frequency domain one Limitations for impedance, frequency domain based C-V (LRC) techniques  Principle (LCR meter) “works” only if complexity (jX C ) appears due to conductance/impedance LRC phasor Whether standard paradigm of C-V technique is valid when diode current i C  i gen, i capt for U R -?

3. Applicable only when diode can be emulated by the linear elements U ac <<kT/e C P  C S (U R )  C b0 (1+U/U bi ) -1/2 C b0 =(eN D  0 S 2 /2eU bi ) 1/2 U bi =(kT/e)ln(N Ap+ N D /n i 2 ) at least Uac/URdc<<1` Motivation for alternative techniques vs. impedance based frequency domain one Limitations for impedance, frequency domain based C-V (LRC) techniques  Principle (LCR meter) “works” only if complexity (jX C ) appears due to conductance/impedance LRC phasor Whether standard paradigm of C-V technique is valid when diode current i C  i gen, i capt & how to correlate with I-V -? Why huge difference in C P and Cs appears for heavily irradiated diode -? Why C-V measurements are improved at high frequencies-? Why extracted depletion voltage depends on frequency -? 100 kHz

4. Motivation for alternative techniques vs. impedance based frequency domain one Limitations for impedance, frequency domain based C-V (LRC) techniques  Principle (LCR meter) “works” only if complexity (jX C ) appears due to conductance/impedance LRC phasor Whether standard paradigm of C-V technique is valid when diode current i C  i gen, i capt for U R -? Why huge difference in C P and Cs appears for heavily irradiated diode -? Why C-V measurements are improved at high frequencies-? Why extracted depletion voltage depends on frequency -? 30 Hz Applicable only when diode can be emulated by the linear elements U ac <<kT/e C P  C S (U R )  C b0 (1+U/U bi ) -1/2 C b0 =(eN D  0 S 2 /2eU bi ) 1/2 U bi =(kT/e)ln(N Ap+ N D /n i 2 )

5. Motivation for alternative techniques vs. impedance based frequency domain one i * gen LRC phasor becomes multi-dimensional Limitations for impedance, frequency domain based C-V (LRC) techniques  Principle (LRC meter) “works” only if complexity (jX C ) appears due to impedance How are the generation and carrier capture currents included into standard C-V for (heavily) irradiated pin diodes-? with large i gen =en i w(U)S/  gen  gen =2cosh(E L -E i )/v T  N L - short i  =i C +(i gen +i diff - complex quatn.) I gen,capt =en i w(U)S/  gen,capt becomes a complex quantity for ac U ~ Is it possible to separate an impact of i gen, capt from C-V to correlate with I-V -?  Technical limitations for LRC-meters based measurements - necessary to make measurements in the range of low U R voltages to avoid the impact of i gen,~ U 1/2 - LRC meters with small ac voltage U ~ <<kT/e - dc and ac voltage sources connected in series (dependence on R in dc ), - noise (U ns ) suppressed dc voltage sources due to small U ns << U ~, - no additional loops (capacitors, resistors), limitations to ground for LRC-meters with wide range of external dc voltages Indications that LRC impedance principle and a paradigm of parameter extraction does not work anymore: - appears huge difference between C P and C S - artefact of principle due to i * gen, - impossible to separate i C and i * gen, - appears crucial reverse voltage drop:  e.g. U gen =i gen R depl =w 2 (U)/  gen and indefinite voltage drop (on junction and within bulk) U techn =U gen  U FD shifts crucially to the high voltage/high frequency range due to increase of U gen with U ext - depletion width becomes indefinite (un-known  gen ) - estimation by iteration procedure-- simulations by TCAD/SPICE or approach of positive root w(U ex )=[2  0 (U bi +U ext )/{eN D (1+2  0 /eN D  gen )}] 1/2 – valid for U ac /U dc <<1 ; necessary additional parameters ) - intricate (w(U ext )) dependence on frequency, temperature, voltage - due to  gen - appears an artificial effective doping N ef art = N D (1  2  0 /eN D  gen ) – seeming variations

6.  Principles to include i gen, capt  To include dominant physical processes, analysis of C bj (U)=  0 S/w(U) is an alternative way with estimation of w(U) by iteration procedure- approach of positive w(U) root using U gen =w 2 /  gen,capt valid for U ac /U dc <<1 and leads to different N eff =N D (1  2  0 /eN D  +gen,-capt ) for  1/  gen (+) and for  1/  capt (-) Motivation for alternative techniques vs. impedance based frequency domain one  Alternative measurement techniques capable to separate components  Evaluation of w(U junct ) by simulations by TCAD/SPICE etc.

7. BELIV technique U(t)=U P /  PL t =At LIV ramp A=U P /  PL =  U/  t  PL = 10 ns  500  s U P = 0.01  5 V C b = 2 pF  40 µF with resolution  0.2 pF | (2-20 pF) U C =i C* 50  =10 mV  4 pF| A=5*E8 V/s Cryo-chamber AT-DSO-6102A iCiC LIV always starts from U(t)=0

8. BELIV technique, model and simulations Reverse bias Short transient processes acting in series due to t D,  DR,  capt,  gen etc (to complete a circuit) determine a delay,- reduction of the initial displacement current step. Similar effect perturbs the C-V characteristic at U R  0 measured by impedance technique (LRC-meters). Displacement current Charge extraction current tete Charge extraction Charge generation

9. BELIV technique U F model U(t)=U P /  PL t =At Forward bias Transcendental, iterative simulations

10. BELIV transients – measurement technique a b a- Barrier evaluation by linearily increasing voltage (BELIV) technique based on charge extraction current transients measured in the non-irradiated and irradiated with small fluence pin diode at reverse (U R ) biasing by LIV pulses. b- Charge injection BELIV transients for forward (U F ) biased pin diode irradiated with small fluence varying ramp A of LIV pulses. Reverse biasing Forward biasing Barrier (charge) capacitance Diffusion (storage charge) capacitance

11. BELIV transients – measurement technique U R pulse duration dependent BELIV transients at a constant LIV ramp is equivalent to C b -V~t

12. BELIV transients on WODEAN pad-detectors neutron-irradiated with fluences 10 12 -10 16 n/cm 2 a b a- LIV pulse duration (LIV ramp) dependent BELIV transients at reverse (U R ) bias. b- Comparison of charge extraction (U R ) and injection (U F ) BELIV transients measured on diodes irradiated by neutrons of different fluence. To separate the displacement, generation/capture and diffusion currents, a wide range of duration/voltage and perfect LIV pulses are necessary. For diodes irradiated with rather small fluence charge extraction current prevails for Rev biasing, while charge storage (diffusion) capacitance dominates for Frw biased diodes. In heavily irradiated material generation and recombination currents dominate. Voltage on junction is governed by Ujnc=At-i  RL Reverse bias Reverse & Forward bias Barrier capacitance prevails for short LIV pulses C b dominates for 1E12 n/cm 2 Igen & irec dominate for 1E16 n/cm 2

13. BELIV results –dependence on fluence a b a- Variations of BELIV transients with irradiation fluence for reverse biased Si pin pad-detector at the same LIV parameters (A= 3 MV/s,  PL =1.5  s). b- Injection current BELIV transients for different fluence neutron irradiated Si pin diodes. The extreme points (t e, t Fk ) are denoted on transients. i C (t) tete

14. BELIV results –dependence on temperature Temperature dependent variations of BELIV transients in heavily (with fluence of 10 16 n/cm 2 ) irradiated Si pin diode. T=294 K U bi still exists (for 1E16 n/cm 2 ) but diode at RT resembles a photo-resistor at large U bias

15. Photo-conductivity gain (PCG) PCG=t dr,h /t dr,e  CCE>1 if t dr,e <t dr,h <  Rec CCE  0 for  Rec <t dr - radiation induced generation (trapping) centers (increased density with fluence) enhance probability for PCG processes; - reduction of t dr by enhancement of U>U FD and by reduction of d~l h ; - resolvable PCG pulses if time gap t ar between arrival of HE particles t ar >  tr p+p+ n+n+ i at FD - + t dr,h =l h 2 /  h U t dr,e =l e 2 /  e U for t dr,e <t dr,h to keep el. neutrality additional carrier(s) is injected from electrode or thermally generated in vicinity of electrode  tr  Rec gTgT n, H +

16. Summary: detector- barrier evaluation by LIV For barrier evaluation better to control U bi =(kT/e)ln(N A N D /n i 2 ) BELIV shows N D is invariable, barrier exists, detector functional, but necessary to shift the operational range towards high (  ) frequency/short time domain range, to decrease bias voltage (to suppress i gen ) etc. Optimization of the detector’ functionality is possible only by a trade-off among desirable parameters: - necessity to shift the time domain  TD towards short shaping time  TD  1/  is compatible with LHC operation regime, but, to reduce an impact of i gen, rec, it is desirable to keep  rec,gen >  TD >  DR (reduction of  DR is possible by enhancement of doping); - to suppress i gen, rec - reduction of the operational voltages, temperature and base thickness d; - to reach full-depletion – enhancement of operational voltage, but increases a problem with i gen ~U 1/2 ; - to reduce impact of g-r noises – enhancement of detector volume V=Sd through base thickness or area S (  3-D detectors); - to approach a photo-conductivity gain regime (to increase CCE) enhancement of operational voltage and proper reduction of base thickness d;

17. Summary  Validity of a simple paradigm (standard C-V method) of the parameter extraction from C-V characteristics in irradiated diodes should be verified for every experimental regime and adjusted by selecting , U R, U ac, T parameters  Developed BELIV transient technique enables one to control variations of U bi and generation current dependent on fluence and temperature. Increase of generation current for reverse biased diode and reduction of diffusion capacitance/current due to recombination of injected carriers in forward biased diodes leads to the symmetric (Rev/Frw) I-V/C-V transient characteristics. Symmetry of these characteristics indicate the dominant mid-gap centers/clusters with pinned E F.  BELIV shows U bi and N D is invariable and detector is functional, while in heavily irradiated detectors for 20 Hz<  <10 MHz deterioration of characteristics is determined by  capt,gen.  Optimization of the detector’ functionality is possible only by a trade-off among desirable parameters. CCE can be increased through proper design of detector (d) and applied detection regimes (U,  response ) to reach PCG.

18. Thank You for attention!

19. n i /N D E DL -E i Generation lifetime Recombination lifetime  rec,  gen Trivial remarks concerning SRH relations between recombination – generation lifetime Without applied E field With applied dc E field Eqv. R>0 G<0 n i /N D (E DL -E i )/kT Generation lifetime Recombination lifetime  rec,  gen

20. Calibration of LRC-meters

21. BELIV results –dependence on fluence a b a- Variations of BELIV transients with irradiation fluence for reverse biased Si pin pad-detector at the same LIV parameters (A= 3 MV/s,  PL =1.5  s). b- Injection current BELIV transients for different fluence neutron irradiated Si pin diodes. The extreme points (t e, t Fk ) are denoted on transients.

22. Relation among C b,, R depl and LRC: Y,R p,C p