2. Three apertures provide events registration both from upper and lateral directions.

3. the main aperture triggers: gamma-quanta – special matrix included TOF (S1,S2), Ech2 (S1,S2), Bsh, Ee Ech1(ACtop, AClat), Ebsh (ACtop, AClat) energy estimation EchN(S3,S4) the main aperture triggers: electrons/positrons – special matrix included TOF (S1,S2), Bsh, Ech1 (S1,S2), EeCC1, Ee Ech1(ACtop, AClat), Ebsh (ACtop, AClat) energy estimation EchN(S3,S4) the main aperture triggers: nucleus – special matrix included TOF (S1,S2), EchN (S1,S2), BshE, Ep EchN(ACtop, AClat), BshE (ACtop, AClat) energy estimation EchN(S3,S4) signals types used in triggers: amplitude analysis 1) Ech1 – singly charged particle energy deposition 2) EchN – multiply charged particle energy deposition 3) Ech2 – double charged particle energy deposition 4) BshE - back splash energy deposition 5) Ee - electrons energy deposition 6) Ep - protons energy deposition arrival time analysis 7) TOF – particle direction up-down 8) BshT – back splash signals 1-2 - detectors ACtop, AClat, S1,S2,S3,S4 signal 4,8 - detectors ACtop, AClat signals 3, 7 – detectors S1,S2 signals 5, 6 – detectors S3,S4 additional signals from CC1: EеСС1 - registration of e-/e+ EpСС1 - registration of p

5. Simplified scheme of special matrix for definition whether particle is neutral or charged for events inside of the main aperture. The detectors registered particle energy deposition marked by colors, the black letter marked devices sampled accordingly special matrix, the gray letter shown other detectors.

6. Simplified scheme of special matrix for definition whether particle is neutral or charged for events outside of the main aperture. The detectors registered particle energy deposition marked by colors, the black letter marked devices sampled accordingly special matrix, the gray letter shown other detectors.

7. Direct energy deposition in double layers ACtop for 100 GeV γ-quanta with backsplash subtraction using temporal analysis (area marked (1) contains ~60% of events with energy deposition less than 1 keV in both ACtop layers)

8. Direct energy deposition in double layers ACtop for 3 GeV γ-quanta with backsplash subtraction using temporal analysis (area marked (2) contains ~70% of events with energy deposition less than 1 keV in both ACtop layers)

9. Direct energy deposition in double layers ACtop for relativistic protons (grey) and electrons (black) used for thresholds definition.

10. Direct energy deposition in double layers ACtop for 3 GeV protons used for thresholds definition.

11. signals types used in triggers: amplitude analysis 1) Ech1 – singly charged particle energy deposition 2) EchN – multiply charged particle energy deposition 4) BshE - back splash energy deposition 5) Ee - electrons energy deposition 6) Ep - protons energy deposition signals 1-2 - detectors S2,S3,S4 signal 4 - detector S2 signals 5, 6 – detectors S3,S4 additional signals from CC1: EеСС1 - registration of e-/e+ EpСС1 - registration of p particle CC1 – particle pass through one of layers additional aperture triggers: gamma-quanta – special matrix included: particleCC1, EeCC1(2-3), Ech1 (S2,S3), BshE (S2), Ee energy estimation EchN(S3,S4) electrons/positrons - special matrix included: particleCC1, EeCC1(1-2) Ech1 (S2) Ech1 (S3), Ebsh (S2), Ee energy estimation EchN(S3,S4) nucleus – special matrix included: particleCC1, EeCC1(1-2), EchN (S2), Ech1 (S3), BshE (S2),Ep energy estimation EchN(S3,S4)

13. signals types used in triggers: amplitude analysis 1) Ech1 – singly charged particle energy deposition 2) EchN – multiply charged particle energy deposition 4) BshE - back splash energy deposition 5) Ee - electrons energy deposition 6) Ep - protons energy deposition signals 1-2 - detectors S2,S3,S4, LD signal 4 - detectos S2,S3,S4, LD signals 5, 6 – detectors S2,S3,S4, LD additional signals from CC2: EеСС2 - registration of e-/e+ EpСС2 - registration of p particle CC2_1, particle CC2_2 – particle pass through first, second and forth perimeter layers lateral aperture triggers: gammas – special matrix included: particleCC2, EeCC2,Ech1 (S2,S3,S4, LD), BshE (S2,S3,S4, LD), Ee energy estimation EchN(S2,S3,S4,LD) electrons/positrons - special matrix included: particleCC2, EeCC2, Ech1(LD), Ebsh (S2,S3,S4,LD), Ee energy estimation nucleus – special matrix included: particleCC2, Ee(LD),EchN(LD),Ech1(S3),BshE(S2,S3,S4,LD),Ep energy estimation EchN(S2,S3,S4,LD)

15. Energy bandEnergy resolutionAngular resolution 0.1-0.25 GeVfrom ~30% up to ~15%from ~5 о up to ~1.5 о 0.25 – 1 GeVfrom ~15% up to ~9%from ~1.5 о up to ~0.6 о 1 – 10 GeVfrom ~9% up to ~2.7%from ~0.6 о up to ~0.12 о 10-10 2 GeVfrom ~2.7% up to 2%from ~0.12 о up to ~0.02 о > 10 2 GeV2%<0.02 о Conclusion: the main aperture characteristics

16. Conclusion: the additional and lateral apertures characteristics Aperture type Energy bandEnergy resolutionAngular resolution Additional 1-10 MeVfrom 3% up to 2%~5о~5о 10-10 2 MeV2%~4 о 0.1-1 GeV2% from ~4 о up to ~1 о (provides by strips in CC1) > 1 GeV2% ~0.7 о (provides by strips in CC1 and shower axis registration in CC2) Lateral 0.2-1 MeV from ~9% up to ~3% Only for transient events ~5 о 1-5 MeV~3% Only for transient events ~10 о > 10 MeV~2%-