1. Develop (K 0.5 Na 0.5 )NbO 3 Lead-Free Ferroelectric Thin Films by the RF Sputtering Technique Hsiu-Hsien Su

2. CONTENTS Introduction Experimental procedures Results and discussion Conclusion 1

3. INTRODUCTION Target by the solid-state method. By the use RF magnetron sputtering. Thin films are deposited on the ITO substrates. 2

4. EXPERIMENTAL PROCEDURES 3 K 2 O 3, Na 2 CO 3, Nb 2 O 5 Mixing and Ball Mill (12h) Dried, ground, and calcined (865 ℃ /24h) Sintering (1140 ℃ /3h) in the air (K 0.5 Na 0.5 )NbO 3 Target

5. EXPERIMENTAL PROCEDURES 4 Sputtering (K 0.5 Na 0.5 )NbO 3 on the ITO Substrate XRD/FE-SEM/AFM Al Electrode Measured

6. Measured system 5

7. RESULTS AND DISCUSSION 6

8. No annealing 400  C annealing 500  C annealing 600  C annealing 7 SEM

9. No annealing 400  C annealing 500  C annealing 600  C annealing AFM microstructure 8 Roughness: 14.11 nm Roughness: 4.01 nm Roughness: 3.627 nmRoughness: 7.762 nm

10. Leakage current density 9

11. CONCLUSION The main effect of the annealing temperature is grain growth Higher annealing temperature will cause to Abnormal grain growth Pores increasing Leakage current increasing 10

12. CONCLUSION 400 °C annealing reveals 1. The best roughness 2. The best grain growth 3. The best leakage current density 11

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