1. www.fairchildsemi.com Fairchild Solution forPDP application Feb, 2007 Visual System Team High Voltage Functional Power Solutions

2. 2 Discrete Solution

3. 3 Component Trend in PDP Market  AS for main blocks ( Sustain and Energy Recovery ) - “M” com. / “L” com. / “S” com. : IGBT - “F” com. / “O” com. : MOSFET ( IGBT on new concept ) Sustain Energy Recovery Pass Switch Y-BoardX(Z)-Board HVIC Reset Clamp Vsus Trend“ F ” com.“ M “ com.“ L “ com.“ O “ com.“ S “ com. Current180 ~ 190V190 ~ 200V180 ~ 190V New No Plan TBD No PlanUp to 220V Fairchild Solution300V PDP IGBT300V / 450V PDP IGBT300V PDP IGBT 350V PDP IGBT

4. 4 Fairchild IGBT IGBT Products Std. Discrete - 600/900/1500V UF Series - 600V RUF B,C-speed - 600V B,C-speed (GEN3) - 300 / 600V SMPS IGBT ( A-speed) - 1200V NPT P/TIGBT FGA series ( NPTA) B,C-speed ( NPT1,MTP ) - 600V NPT IGBT - 600V Field Stop IGBT Specific - 300V / 300V Planar - 300V TIGBT - 400V Planar - 450V TIGBT - 600V Planar - 600V NPT IGBT - 900V PT/NPT TIGBT - 900V NPT Field Stop IGBT - 1000V PT/NPT TIGBT - 1200V NPT P/TIGBT - 1200V NPT Field Stop IGBT - 1500 / 1700V SDB Module - 1PAK - 2PAK - Complex SPM - SPM - SPIM - TPIM - CPM 600V, 1200V > 2A ~ 160A Camera (400V TIGBT) IH Jar / Cooker ( 600/1200V ) MWO ( 600/1200V) PDP ( 300 ~ 450V ) Major Device 600V, 1200V > 5A ~ 400A 600V series >10A ~ 30A 1200V series* > 6A

5. 5 PDP IGBT 450V Trench IGBTs for Japan PDP market 300V Trench IGBTs for next model in KOREA PDP market 300V Planar IGBTs for parallel operation in KOREA and Japan PDP market 600V Field Stop IGBTs for single board concept in KOREA PDP market CY06CY05 PDP IGBT CY08Device 300V 90/120/150/180A (PT,Planar) 300V 30/ 50/ 70/ 90/ 120/ 180 / 240A (PT,Trench) CY07 450V 30/45/60A (PT,Trench) 500 ~ 600V [TBD] (Field Stop, Planar) 300V 30 / 70A (PT,Planar) Proliferation CY09 Proliferation Vce,sat ~ 1.9 V@peak, tf~ <200nsec, 30% shrink from Planar Vce,sat ~ 2.0 V@peak, tf~ <200nsec 300V 2nd Generation (PT,Trench) Proliferation 35% shrink 500 ~ 600V [TBD] (Field Stop, Trench)

6. 6 Specification for PDP IGBT * Icp condition : @pulse=100us, D=0.2 Products in mass production are on red

7. 7 static Latch (“R” maker) Vge = 10VVge = 15V R3xx3 * 3 120N30 * 1 90N30 * 1 R3xx3 *1 120N30 * 1 R3xx3 * 3 90N30 * 1 R3xx3 *1 30N30 * 3 70N30 * 1 30N30 * 1 30N30 * 3 70N30 * 1 30N30 * 1 IGBT Competitiveness - 300V/30A PDP IGBT- FGPF30N30R3XX3 Qge=5.04 [nC] / Qgc=15.96 [nC] Qg=36.96 [nC] Qge=4.2 [nC] / Qgc=7.72[nC] Qg=24.69[nC]

8. 8 MOSFET PDP MOSFET CY06CY05CY08Device 250V 42.5mohm (Trench), D2PAK 150/ 200/250/280/300 350/ 500/ 650V (Planar,UniFET) 150 /200/250/300V (SupreMOS) CY07 Proliferation 200V 27mohm (Trench), D2PAK Proliferation CY09 150 /200/250/300V (SupreMOS, Trench)

9. 9 Specification for PDP MOSFET Products in mass production are on red

10. 10 Gate Charge (Vd=125V,Id=50A)R-Load S/W (125V/50A, Rg=25Ω)Rds(on) (Vgs=10V,Id=25A) QgsQgdQgtd(on)trtd(off)tfRds(on),typA*Rds(on) FDB271028.9 nC18.1 nC68.2 nC88 ns376 ns108 ns244 ns35.4 mΩ8.1 “I “ com.28.2 nC 79.3 nC70 ns430 ns66 ns288 ns36.4 mΩ10.6 “I” com FDB2710 Gate Charge S/W turn-on S/W turn-off Vsd-Id Vds Vgs Vds Vgs FDB2710 MOSFET Competitiveness - 250V PDP MOSFET - “I” com

11. 11 Fairchild Diode UltraFast HyperFast Stealth Damper Schottky 600V Vf : 2.4V Trr : 22 ~ 45ns 1200V Vf :3.3V Trr : 44 ~ 70ns 600V Vf : 2.1V Trr : 35 ~ 45ns 1200V Vf :3.2V Trr : 70 ~ 75ns 200V Vf : 1.2V Trr : 30 ~ 40ns 300 / 400 / 450V Vf : 1.4V Trr : 45 ~ 50ns 600V Vf : 2.3V Trr : 80 ~ 90ns 1200V Vf :3.5V Trr : 100 ~ 120ns 1500V Vf : 1.5 ~ 2.4 Tff : 120 ~ 170ns 35V ~ 100V Vf : 0.55 ~ 0.95V Diode Products - Dual common anode type - Dual common cathode type - Dual series type - Single type

12. 12 PDP Diode 400V UltraFast Diode for KOREA PDP market 500V UltraFast Diode for Japan PDP market Cost effective version of UltraFast Diode (UltraFast II ) CY08CY06CY05 Diode CY08Device 10/ 20/ 30/ 40/ 60A 300V (UltraFast) 6/ 10/ 12/ 20/ 30/ 40/ 60A 200V (UltraFast) 10 / 20 / 30 / 60A 400V (UltraFast) CY07 Proliferation 10/20/30/40/60A 300V / 400V / 500V (UltraFast II) Proliferation 10/ 20/ 30/ 40A 500V (UltraFast) Proliferation CY09

13. 13 Specification for PDP Diode Products in mass production are on red

14. 14 Diode Competitiveness - 300V/10A Ultrafast Rectifier - “S” com Fairchild “N” com “S-1” com Fairchild “R” com Features ^ Low Forward Voltage & High Ruggedness ^ High Speed Switching ( Low Stored Charge, Qrr & Soft Recovery )