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Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology:

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Presentation on theme: "Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology:"— Presentation transcript:

1 http://www.eet.bme.hu Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC technology: set of elements http://www.eet.bme.hu/~poppe/miel/en/09-bipIC.ppt

2 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 2 Set of components available in bipolar IC-s ► Resistor with base diffusion ► Resistor + emitter diffusion ► PNP transistors ► Thin film capacitance ► Layout of an OpAmp

3 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 3 Element set available in bipolar IC processes

4 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 4 Element set in bipolar IC-s Detail of a bipolar IC – as seen by a scanning electron microscope

5 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 5 Element set in bipolar IC-s npn (vertical) transistor Island (well) Substrate Buried layer Emitter Base

6 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 6 Element set in bipolar IC-s the isolation diffusion

7 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 7 Structure of an npn IC transistor Island (well) Substrate Buried layer Emitter Base metal

8 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 8 Element set in bipolar IC-s npn transistors Effective emitter edge at the base contact side (I=2 A/cm), EB br.down: 5-6 V, CB br.down 40-50 V, f T =800-900 MHz Process optimized for the npn (vertical) transistors

9 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 9 Element set in bipolar IC-s High current npn transistors

10 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 10 Area efficient solutions: two transistors in a common isolation well, multi-emitter transistor Element set in bipolar IC-s Different npn transistors

11 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 11 Element set in bipolar IC-s Different npn transistors Effective emitter edge at the base contact side (I=2 A/cm)

12 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 12 Element set in bipolar IC-s Resistor with base diffusion island (well)

13 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 13 Element set in bipolar IC-s Resistor with base diffusion There could be multiple resistors in the same isolation well The well must be connected to +U CC !

14 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 14 Element set in bipolar IC-s Resistor with base diffusion, folded as a meander Accuracy, parasistics

15 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 15 How to make components VERY MUCH identical? same layout shape same position close to eachother larger than minimal size same temperature

16 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 16 Element set in bipolar IC-s Resistor with base diffusion, cross section reduced by emitter diffusion

17 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 17 Element set in bipolar IC-s value: few times 100 k  emitter diffusion base diffusion Slightly nonlinear Limited voltage range Resistor with base diffusion, cross section reduced by emitter diffusion

18 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 18 small emitter diffusion resistor (connection underpass), value cca. 2  Emitter diffusion Metallization Element set in bipolar IC-s

19 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 19 Element set in bipolar IC-s Lateral pnp transistor

20 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 20 Multiple transistors in common well Element set in bipolar IC-s Lateral pnp transistor

21 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 21 Forms a current mirror Element set in bipolar IC-s Lateral pnp "sector" transistors overlapping contact window

22 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 22 I I I 3I Also with circular shape! Element set in bipolar IC-s Lateral pnp "sector" transistors

23 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 23 n + no buried layer push and pull amplifier (B) Element set in bipolar IC-s Vertical pnp transistor vertical pnp structure

24 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 24 d ox : 0,1  m (50 V) C spec : 3-400pF/mm 2 Element set in bipolar IC-s The thin film capacitor Metal

25 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 25 Element set in bipolar IC-s Thin film (metal-SiO 2 -n + ) capacitor in an OpAmp Value: cca. 30pF C spec : 3-400pF/mm 2

26 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 26 Compare the size of the capacitor and the transistors! Element set in bipolar IC-s Thin film (metal-SiO 2 -n + ) capacitor in an OpAmp

27 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 27 Element set in bipolar IC-s The pn junction as a capacitor The space charge capacitance can be utilized, but voltage dependent (non-linear) may not be forward biased! EB: 1000pF/mm 2 (up to 5 V) CB: 150pF/mm 2 (up to ~50 V)

28 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 28 OpAmp layout, component arrangement T1, T2: NPN, input differential pair T3, T4: PNP, lateral T5, T6, T7: NPN T10, T11, T13: PNP lateral transistors D1, D2: diodes T16-17: NPN darlington T19-21: 3 NPN transistors in a common well R1, R6: large resistors R7: base+emitter diff. resistor R8, R9: small resistors T22: PNP vertical T23: NPN vertical (high current) Symmetry – to assure same thermal feedback path. This layout is not yet the best.

29 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 29 Thermal effects in analog IC-s: a bipolar OpAmp ► Thermal impedances ► Thermal feedback in case of an OpAmp ► How does the layout influence the thermal feedback ► Layout – thermally optimized

30 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 30 The thermal impedances The transfer impedance Z th complex valued The self impedance T 1 temperature rise

31 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 31 Thermal feedback – in an OpAmp Stationary state, V OUT > 0   -2 mV/ o C

32 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 32 Thermal feedback – in an OpAmp Stationary state Effect on the open loop characteristic

33 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 33 Thermal feedback – in an OpAmp Methods for analysis Both measurements and simulations were done. A well known, commercially available circuit was studied (  A741 OpAmp). Both stationary state and dynamic behaviour. Identical type from different IC venors: different layout designs realizing the same electrical schematic. Actual layout (component arrangement) was identified by "reverse engineering".

34 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 34 Details of the model Schematic of the OpAmp Physical layer structure Device under test:  A741 OpAmp Yellow transistors considered by electro-thermal model

35 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 35 Reverse engineered layouts Layout "A"

36 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 36 Reverse engineered layouts Layout "B"

37 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 37 Open loop characteristics (measurement and simulation) Layout "A"

38 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 38 Layout "B" Open loop characteristics (measurement and simulation)

39 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 39 Thermal effects in the output impedance Frequency domain analysis

40 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 40 Layout "A", upper transistor on, G=10 4 Effect appears even if there is no load! Frequency domain analysis

41 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 41 "A" "B" Difference only in layout! Frequency domain analysis

42 Budapest University of Technology and Economics Department of Electron Devices 11-10-2010 Microelectronics BSc course, Element set in bipolar IC-s © András Poppe & Vladimír Székely, BME-EET 2008 42 "A" "B" Input differential pair (common centroid) Output transistors The ideal layout

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