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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Beyond Silicon… Advanced Power Electronics for FACTS Technology Jerry Melcher APE Initiative Lead Energy Delivery and Utilization
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? Where are we going?
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Power Electronics The Thyristor
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Thyristor - SCR
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Power Progress for Si
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? –Si Power Devices are Reaching Their Fundamental Limits of Performance. Where are we going?
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program The “Diamond” Structure
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Si Electrons 3s 3p
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Physics of Semiconductors E k { EGEGEGEG kp Perturbation Theory
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Chemistry of Semiconductors
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Initiative Objectives Why are we doing this? –Si Power Devices are Reaching Their Fundamental Limits of Performance. Where are we going? –SiC and GaN have Breakdown Electrical Fields ~10 Times Higher than Si. Both 4 Times the Forward Current…at the Same Unit Cost! (maybe)
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program EPRI/DARPA 13-18 M$, 3 Years Nasa-LewisSiC Northrup-GrummanSiC Vanderbilt UniversitySiC Silicon Power CorpSiC University of FloridaGaN Cal TechGaN
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Advantages of Post-Silicon Materials CVD PropertySi3C SiC (6C SiC) DiamondGaN Importance Bandgap (300K)1.12.2 (2.9)5.53.4Blocking Voltage Maximum Operating 500>900 (>1000)1400>800Limits Power Flow Temp (K) Breakdown Voltage 0.34105 Maximum (Eb, 10 6 V/cm) Power Capacity Hole Mobility 600401600200 Switching Speed (RT, cm 2 /Vs) Thermal Conductivity 1.55201.3Cooling Rate (C T, w/cm)
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Growth SiC Charge 2200 C Boule 2000 C Sublimation 6H-SiC Substrate RF Coils H 2 SiH 4 C 3 H 8 HCL N 2 Al(Me) 3 CVD
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Progress in Wafer Size
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Wafer Price vs. Year
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program Defects: Micropipes 2 m Micropipes form to relieve strain around super-screw dislocations. surface energy, = 4 J/m 2 shear modulus, G = 200 GPa b = 6b 0
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Micropipe Density vs. Year
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC: Record µPipe Density 6 1 2 7 3 4 5 8
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Thyristor: Forward Voltage
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program SiC Diode: Reverse Characterisitics
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Advanced Power Electronics -- EPRI Preview P. M. Grant 13 March 1999 Strategic Initiative Program What About GaN & Diamonds? See OutPost 8 “Why Diamonds are a Girl’s Best Friend!”
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